Alpha & Omega AO3409, AO3409L Schematic [ru]

General Description Product Summary

V

Symbol

A

A D

Absolute Maximum Ratings T

=25°C unless otherwise noted

AO3409

30V P-Channel MOSFET

The AO3409 uses advanced trench technology to provide
excellent R

and low gate charge. This device is

DS(ON)

suitable for use as a load switch or in PWM applications.

Top View Bottom View

D

SOT23

D

S

G

A

G

S

DS

ID (at VGS=-10V) -2.6A
R
R

(at VGS=-10V) < 110mΩ

DS(ON)

(at VGS=-4.5V) < 180mΩ

DS(ON)

G

Maximum UnitsParameter

Drain-Source Voltage -30

Continuous Drain
Current

Pulsed Drain Current

TA=25°C
TA=70°C

C

TA=25°C

B

Power Dissipation

TA=70°C

Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

STG

±20Gate-Source Voltage

-2.6

-2.2

-20

1.4
1

-55 to 150

-30V

D

S

V
V

A

W
°C

Thermal Characteristics

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

Rev 9: November 2010 www.aosmd.com Page 1 of 5

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJL

70

100

63

90

125

80

UnitsParameter Typ Max

°C/W
°C/W
°C/W

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO3409

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=-250µA, VGS=0V

-30 V

VDS=-30V, VGS=0V -1

TJ=55°C -5
VDS=0V, VGS= ±20V
VDS=V

GS ID

=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-2.6A

-1.4 -1.9 -2.4 V

-20 A

±100 nA

77 110

TJ=125°C 100 140
VGS=-4.5V, ID=-2A
VDS=-5V, ID=-2.6A
IS=-1A,VGS=0V

125 180 mΩ

5 S

-0.8 -1 V

-1.5 A

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

3.5 7.2 11.0 Ω

197 240 pF

42 pF
26 37 pF

SWITCHING PARAMETERS

Qg(10V) 4.3 5.2 nC
Qg(4.5V) 2.2 3 nC
Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

Total Gate Charge
Total Gate Charge
Gate Source Charge

VGS=-10V, VDS=-15V, ID=-2.6A

Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=5.8Ω,
R

Turn-Off Fall Time
Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

IF=-2.6A, dI/dt=100A/µs
IF=-2.6A, dI/dt=100A/µs

J(MAX)

0.7 nC

1.1 nC

7.5 ns

4.1 ns

GEN

=3Ω

11.8 ns

3.8 ns

11.3 14 ns

4.4

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse ratin g.

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 9: November 2010 www.aosmd.com Page 2 of 5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25°C

AO3409

15

-10V

12

9

(A)

D

-I

6

3

0

0 1 2 3 4 5

Fig 1: On-Region Characteristics (Note E)

200
180
160

)

140

Ω

Ω

Ω

Ω

(m

120

DS(ON)

100

R

80
60
40

0 2 4 6 8 10

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage (Note E)

-6V

-8V

VGS=-3.5V

-VDS (Volts)

VGS=-4.5V

VGS=-10V

-ID (A)

-5V

-4.5V

-4V

10

VDS=-5V

8

6

(A)

D

-I

4

2

0

0 1 2 3 4 5 6

Figure 2: Transfer Characteristics (Note E)

1.6

1.4

1.2

1

Normalized On-Resistance

0.8
0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

125°C

25°C

-VGS(Volts)

VGS=-10V
ID=-2.6A

VGS=-4.5V
ID=-2A

Temperature (°C)

(Note E)

17

5
2

10

0

18

300

260

220

)

Ω

Ω

Ω

Ω

(m

180

DS(ON)

R

140

100

60

25°C

2 4 6 8 10

-VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

125°C

ID=-2.6A

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

-I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

40

125°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

Rev 9: November 2010 www.aosmd.com Page 3 of 5