Alpha & Omega AO3407 Schematic [ru]

p

AO3407

A

P-Channel Enhancement Mode Field Effect Transistor

ug 2002

General Description

The AO3407 uses advanced trench technology to
provide excellent R

device is suitable for use as a load switch or in PWM
applications.

Absolute Maximum Ratings T

Drain-Source Voltage -30

Continuous Drain
Current

A

Pulsed Drain Current

Power Dissipation

A

Junction and Storage Temperature Range

with low gate charge. This

DS(ON)

TO-236
(SOT-23)
Top View

G

D

S

=25°C unless otherwise noted

A

=25°C

T

A

=70°C

T

A

B

TA=25°C

=70°C

T

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

STG

Features

VDS (V) = -30V
I

= -4.1 A

D

R
R

G

< 52mΩ (VGS = -10V)

DS(ON)

< 87mΩ (VGS = -4.5V)

DS(ON)

D

S

Maximum UnitsParameter

±20Gate-Source Voltage

-4.1

-3.5

-20

1.4

-55 to 150

1

V

V

A

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

A

t ≤ 10s
Steady-State

Steady-State

Symbol Ty

R

θJA

R

θJL

65 90
85 125
43 60

Max

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AO3407

Ω

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

ID=-250µA, VGS=0V

VDS=-24V, VGS=0V

VDS=0V, VGS=±20V

Gate Threshold Voltage VDS=V

On state drain current

VGS=-4.5V, VDS=-5V

VGS=-10V, ID=-4.1A

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-3A

Forward Transconductance

Diode Forward Voltage

VDS=-5V, ID=-4A

IS=-1A,VGS=0V

Maximum Body-Diode Continuous Current

GS ID

TJ=55°C

=-250µA

TJ=125°C

-30 V

-1

-5

µA

±100 nA

-1 -1.8 -3 V

-10 A

40.5 52

57 73

64 87

mΩ

m

5.5 8.2 S

-0.77 -1 V

-2.2 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

VGS=0V, VDS=-15V, f=1MHz

Reverse Transfer Capacitance

Gate resistance VGS=0V, VDS=0V, f=1MHz

700 pF

120 pF

75 pF

10 Ω

SWITCHING PARAMETERS

Q

Q

Q

Q

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

g

g

gs

gd

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

VGS=-4.5V, VDS=-15V, ID=-4A

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=3.6Ω,
R

=3Ω

GEN

Turn-Off Fall Time

Body Diode Reverse Recovery Time

rr

Body Diode Reverse Recovery Charge

IF=-4A, dI/dt=100A/µs

IF=-4A, dI/dt=100A/µs

14.3 nC

7nC

3.1 nC

3nC

8.6 ns

5ns

28.2 ns

13.5 ns

27

ns

15 nC

A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R

θJA

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

and lead to ambient.

θJL

=25°C. The

A

Alpha & Omega Semiconductor, Ltd.

AO3407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20

-10V

-5V

-4.5V

15

10

(A)

D

-I

5

-4V

-3.5V

VGS=-3V

0

0.00 1.00 2.00 3.00 4.00 5.00

(Volts)

-V

DS

Figure 1: On-Region Characteristics

100

80

)

Ω

(m

DS(ON)

R

60

VGS=-4.5V

VGS=-10V

40

10

8

VDS=-5V

6

(A)

D

-I

4

2

125°C

25°C

0

01234

-V

(Volts)

GS

Figure 2: Transfer Characteristics

1.6

VGS=-4.5V

1.4

VGS=-10V

1.2

1

ID=-2A

Normalized On-Resistance

20

0246810

(A)

-I

D

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

160

140

ID=-2A

120

)

Ω

100

(m

80

DS(ON)

R

60

40

25°C

125°C

20

246810

-V

(Volts)

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

1E+01

1E+00

1E-01

1E-02

(A)

S

-I

1E-03

125°C

25°C

1E-04

1E-05

1E-06

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-V

(Volts)

SD

Figure 6: Body-Diode Characteristics

Alpha and Omega Semiconductor, Ltd.