Alpha & Omega AO3404 Schematic [ru]

General Description Product Summary

V

Symbol

Absolute Maximum Ratings T

=25°C unless otherwise noted

A D

A

AO3404

30V N-Channel MOSFET

The AO3404 uses advanced trench technology to provide
excellent R

and low gate charge. This device may

DS(ON)

be used as a load switch or in PWM applications.

Top View Bottom View

D

SOT23

D

S

G

A

G

S

DS

ID (at VGS=10V) 5A
R
R

(at VGS=10V) < 31mΩ

DS(ON)

(at VGS =4.5V) < 43mΩ

DS(ON)

D

G

S

30V

Maximum UnitsParameter

Drain-Source Voltage 30
Gate-Source Voltage

Continuous Drain
Current

Pulsed Drain Current

TA=25°C
TA=70°C

C

TA=25°C

B

Power Dissipation

TA=70°C

Junction and Storage Temperature Range -55 to 150 °C

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

5
4

20

1.4

0.9

STG

V
V±20

A

W

Thermal Characteristics
Parameter Typ Max

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

Rev 10: February 2011 www.aosmd.com Page 1 of 5

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJL

70

100

63

90

125

80

Units

°C/W
°C/W
°C/W

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO3404

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=-250µA, VGS=0V

30 V

VDS=30V, VGS=0V 1

TJ=55°C 5
VDS=0V, VGS=±20V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=5A

1.2 1.8 2.4 V
20 A

25.5 31

±100 nA

TJ=125°C 41 50
VGS=4.5V, ID=4A
VDS=5V, ID=5A
IS=1A,VGS=0V

34 43 mΩ
15 S

0.76 1 V

1.5 A

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1.6 3.25 4.9 Ω

255 310 pF

45 pF
35 50 pF

SWITCHING PARAMETERS
Q

g(10V)

Qg
Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

Total Gate Charge

(4.5V)

Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

VGS=10V, VDS=15V, ID=5A

VGS=10V, VDS=15V, RL=3Ω,
R

=3Ω

GEN

IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse ratin g.

J(MAX)

5.2 6.3 nC

2.55 3.2

0.85 nC

1.3 nC

4.5 ns

2.5 ns

14.5 ns

3.5 ns

8.5 ns

2.2

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 10: February 2011 www.aosmd.com Page 2 of 5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25°C

AO3404

30

10V

25

20

15

(A)

D

I

10

5

0

0 1 2 3 4 5

40

35

)

Ω

Ω

Ω

Ω

(m

30

DS(ON)

R

25

20

0 3 6 9 12 15

7V

VDS (Volts)

Fig 1: On-Region Characteristics (Note E)

VGS=4.5V

VGS=10V

ID (A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage (Note E)

4.5V

4V

3.5V

VGS=3V

15

VDS=5V

10

(A)

D

I

5

0

1 1.5 2 2.5 3 3.5 4 4.5

Figure 2: Transfer Characteristics (Note E)

2

1.8

1.6

1.4

1.2

1

Normalized On-Resistance

0.8
0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

125°C

VGS(Volts)

VGS=10V
ID=5A

Temperature (°C)

(Note E)

25°C

VGS=4.5V
ID=4A

17

5
2

10

0

18

100

80

)

Ω

Ω

Ω

Ω

(m

60

DS(ON)

R

40

20

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

125°C

VGS (Volts)

(Note E)

ID=5A

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

40

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

Rev 10: February 2011 www.aosmd.com Page 3 of 5