Alpha & Omega AO3401L Schematic [ru]

General Description Product Summary

V

Symbol

V

DS

V

Absolute Maximum Ratings T

=25°C unless otherwise noted

Drain-Source Voltage

-30

V

DS

V

Drain-Source Voltage

-30

A D

A

AO3401

30V P-Channel MOSFET

The AO3401 uses advanced trench technology to provide
excellent R

, low gate charge and operation with gate

DS(ON)

voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.

SOT23

Top View Bottom View

Top View Bottom View

D

D

SOT23

D

D

G

S

S

G

G

A

G

S

S

DS

ID (at VGS=-10V) -4.0A
R
R
R

(at VGS=-10V) < 50mΩ

DS(ON)

(at VGS =-4.5V) < 60mΩ

DS(ON)

(at VGS=-2.5V) < 85mΩ

DS(ON)

G

G

Maximum UnitsParameter

V

GS

B

TA=25°C
TA=70°C

C

TA=25°C
TA=70°C

I

D

I

DM

P

D

TJ, T

STG

Continuous Drain
Current

Pulsed Drain Current

Power Dissipation
Junction and Storage Temperature Range -55 to 150

-4

-3.2

-27

1.4

0.9

-30V

D

D

S

S

V±12Gate-Source Voltage

A

W
°C

Thermal Characteristics

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJL

70

100

63

Max

90

125

80

UnitsParameter Typ

°C/W
°C/W
°C/W

www.aosmd.com Page 1 of 5

B

Qgd2.5

nC

Gate Drain Charge

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO3401

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

I

SM

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Pulsed Body-Diode Current

ID=-250µA, VGS=0V

-30 V

VDS=-30V, VGS=0V -1

TJ=55°C -5
VDS=0V, VGS= ±12V
VDS=V

GS ID

=-250µA
VGS=-10V, VDS=5V
VGS=-10V, ID=-4.0A

-0.5 -0.9 -1.3 V

-27 A

±100 nA

41 50

TJ=125°C 62 75
VGS=-4.5V, ID=-3.7A
VGS=-2.5V, ID=-2A
VDS=-5V, ID=-4.0A
IS=1A,VGS=0V

47 60 mΩ
60 85 mΩ
17 S

-0.7 -1 V

-27 A

µA

mΩ

-2 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

645 pF

80 pF
55 pF

4 7.8 12 Ω

SWITCHING PARAMETERS

Qg(10V) 14 nC
Qg(4.5V) 7 nC
Q

gs

Total Gate Charge
Total Gate Charge
Gate Source Charge

VGS=-10V, VDS=-15V, ID=-4.0A

1.5 nC

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

J(MAX)

VGS=-10V, VDS=-15V,
RL=3.75Ω, R

GEN

=3Ω

IF=-4.0A, dI/dt=100A/µs
IF=-4.0A, dI/dt=100A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse rating.

6.5 ns

3.5 ns
41 ns

9 ns

11 ns

3.5

nC

Rev 6: Feb. 2011 www.aosmd.com Page 2 of 5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25°C

125°C

25°C

25

25

10V

10V

4.5V

20

20

15

15

(A)

(A)

D

D

-I

-I

10

10

5

5

0

0

0 1 2 3 4 5

0 1 2 3 4 5

Fig 1: On-Region Characteristics (Note E)

Fig 1: On-Region Characteristics (Note E)

100

100

80

80

Ω

Ω)

Ω

Ω)

Ω

Ω

Ω

Ω

(m

(m

60

60

DS(ON)

DS(ON)

R

R

40

40

20

20

0 2 4 6 8 10

0 2 4 6 8 10

Figure 3: On-Resistance vs. Drain Current and Gate

Figure 3: On-Resistance vs. Drain Current and Gate

4.5V

-VDS(Volts)

-VDS(Volts)

VGS=-2.5V

VGS=-2.5V

VGS=-4.5V

VGS=-4.5V

VGS=-10V

VGS=-10V

-ID(A)

-ID(A)

Voltage (Note E)

Voltage (Note E)

VGS=-2.0V

VGS=-2.0V

-2.5V

-2.5V

20

20

VDS=-5V

VDS=-5V

15

15

(A)

(A)

10

10

D

D

-I

-I

125°C

5

5

0

0

0 0.5 1 1.5 2 2.5 3

0 0.5 1 1.5 2 2.5 3

Figure 2: Transfer Characteristics (Note E)

Figure 2: Transfer Characteristics (Note E)

1.8

1.8

1.6

1.6

1.4

1.4

1.2

1.2

1

1

Normalized On-Resistance

Normalized On-Resistance

0.8

0.8
0 25 50 75 100 125 150 175

0 25 50 75 100 125 150 175

125°C

-VGS(Volts)

-VGS(Volts)

VGS=-10V

VGS=-10V
ID=-4A

ID=-4A

VGS=-4.5V

VGS=-4.5V
ID=-3.7A

ID=-3.7A

VGS=-2.5V

VGS=-2.5V
ID=-2A

ID=-2A

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

Figure 4: On-Resistance vs. Junction Temperature

Temperature (°C)

(Note E)

(Note E)

25°C

25°C

17

5
2

10

0

18

AO3401

150

130

110

Ω

Ω)

Ω

Ω

(m

90

DS(ON)

R

70

50

30

0 2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

125°C

-VGS(Volts)
(Note E)

ID=-4A

1.0E+01

1.0E+00

1.0E-01

(A)

1.0E-02

S

-I

1.0E-03

1.0E-04

1.0E-05

40

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (Note E)

-VSD(Volts)

Rev 6: Feb. 2011 www.aosmd.com Page 3 of 5