Alpha & Omega AO3401A Schematic [ru]

Symbol

Symbol

Typ

Max

AF

A

Absolute Maximum Ratings T

=25°C unless otherwise noted

B

AO3401A
P-Channel Enhancement Mode Field Effect Transistor

General Description

The AO3401A/L uses advanced trench technology to provide
excellent R

voltages as low as 2.5V. This device is suitable for use as a
load switch or other general applications. AO3401A and
AO3401AL are electrically identical.

-RoHS Compliant

-AO3401AL is Halogen Free

low gate charge and operation gate

DS(ON) ,

TO-236

(SOT-23)

A

Top View

G

S

Features

VDS (V) = -30V

= -4.3A (VGS = -10V)

I

D

R
R
R

Rg,Ciss,Coss,Crss Tested

D

< 46mΩ (VGS = -10V)

DS(ON)

< 55mΩ (VGS = -4.5V)

DS(ON)

< 80mΩ (VGS = -2.5V)

DS(ON)

G

Maximum UnitsParameter

Drain-Source Voltage -30

=25°C

Continuous Drain
Current

A,F

T

A

T

A

=70°C

TA=25°C

A

T

Power Dissipation

=70°C

A

Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

STG

±12Gate-Source Voltage

-4.3

-3.8

-25Pulsed Drain Current

1.4

0.9

-55 to 150

D

S

V

V

A

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

t ≤ 10s

Steady-State

C

Steady-State

R

θJA

R

θJL

65 90
85 125
43 80

°C/W
°C/W
°C/W

AO3401A

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

I

D

=-30V, VGS=0V

V

DS

V

=0V, VGS=±12V

DS

V

DS=VGS ID

V

=-4.5V, VDS=-5V

GS

=-10V, ID=-4.3A

V

GS

=-4.5V, ID=-3.5A

V

GS

=-250µA

VGS=-2.5V, ID=-2.5A

=-5V, ID=-4.3A

V

DS

I

=-1A,VGS=0V

S

T

=55°C -5

J

T

=125°C 52 63

J

-30 V

-1
µA

±100 nA

-0.6 -1 -1.3 V

-25 A

36 44

mΩ

44 55 mΩ

62 80 mΩ

13 S

-0.75 -1 V

-2 A

=-250µA, VGS=0V

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V

=0V, VDS=-15V, f=1MHz

GS

V

=0V, VDS=0V, f=1MHz

GS

933 1200 pF

108 pF

81 pF

6 9 Ω

SWITCHING PARAMETERS

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R

D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
F.The current rating is based on the t≤ 10s thermal resistance rating.

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

θJA

is the sum of the thermal impedence from junction to lead R

θJA

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

=-4.5V, VDS=-15V, ID=-4.3A

V

GS

=-10V, VDS=-15V, RL=3.5Ω,

V

GS

R

=6Ω

GEN

IF=-4.3A, dI/dt=100A/µs

=-4.3A, dI/dt=100A/µs

I

F

and lead to ambient.

θJL

9.3 12.2 nC

1.5 nC

3.7 nC

5.2 ns

6.8 ns

42 ns

15 ns

21 28

ns

14.3 nC

=25°C. The

A

Rev2: Aug.2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO3401A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

125°C

125°C

25°C

25

-10V

-4.5V

20

15

(A)

D

-I

10

5

-2.5V

VGS=-2V

0

0 1 2 3 4 5

(Volts)

-V

DS

Figure 1: On-Region Characteristics

100

80

)

Ω

Ω

Ω

Ω

(m

60

DS(ON)

R

VGS=-2.5V

VGS=-4.5V

40

VGS=-10V

-3V

10

VDS=-5V

8

6

(A)

D

-I

4

2

25°C

0

0 0.5 1 1.5 2 2.5 3

-V

(Volts)

GS

Figure 2: Transfer Characteristics

1.6

ID=-3.5A, VGS=-4.5V

1.4

1.2

ID=-4.3A, VGS=-10V

VGS=-2.5V

ID=-2.5A

1

Normalized On-Resistance

20

0 2 4 6 8 10

-ID (A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

80

ID=-4.3A

70

60

)

Ω

Ω

Ω

Ω

(m

50

DS(ON)

R

40

125°C

30

20

2 4 6 8 10

(Volts)

-V

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

1.0E+01

1.0E+00

1.0E-01

1.0E-02

(A)

S

-I

1.0E-03
25°C

1.0E-04

1.0E-05

1.0E-06

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-V

(Volts)

SD

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com