Alpha & Omega AO3400 Schematic [ru]

General Description Product Summary

V

Symbol

V

V

Absolute Maximum Ratings T

=25°C unless otherwise noted

Drain-Source Voltage

30

V

DS

A D

A

V

Drain-Source Voltage

30

AO3400

30V N-Channel MOSFET

The AO3400 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R

. This device is suitable for use as a

DS(ON)

load switch or in PWM applications.

SOT23

Top View Bottom View

Top View Bottom View

D

D

SOT23

D

D

S

S

S

G

G

A

S

DS

ID (at VGS=10V) 5.8A
R
R
R

G

G

(at VGS=10V) < 28mΩ

DS(ON)

(at VGS = 4.5V) < 33mΩ

DS(ON)

(at VGS = 2.5V) < 52mΩ

DS(ON)

D

D

G

G

S

S

30V

Maximum UnitsParameter

V

GS

B

TA=25°C
TA=70°C

C

TA=25°C
TA=70°C

I

D

I

DM

P

D

TJ, T

STG

Continuous Drain
Current

Pulsed Drain Current

Power Dissipation
Junction and Storage Temperature Range -55 to 150 °C

5.8

4.9
30

1.4

0.9

V±12Gate-Source Voltage

A

W

Thermal Characteristics

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

Parameter Typ Max

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJL

70

100

63

90

125

80

www.aosmd.com Page 1 of 5

Units

°C/W
°C/W
°C/W

tr2.5

ns

Turn-On Rise Time

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO3400

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

30 V

VDS=30V, VGS=0V 1

TJ=55°C 5
VDS=0V, VGS= ±12V
VDS=V

GS ID

=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=5.8A

0.65 1.05 1.45 V
30 A

100 nA

18 28

TJ=125°C 28 39
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VDS=5V, ID=5.8A
IS=1A,VGS=0V

19 33 mΩ
24 52 mΩ
33 S

0.7 1 V

µA

mΩ

2 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1.5 3 4.5 Ω

630 pF

75 pF
50 pF

SWITCHING PARAMETERS

Q
Q
Q
t

D(on)

g
gs
gd

Total Gate Charge
Gate Source Charge
Gate Drain Charge

VGS=4.5V, VDS=15V, ID=5.8A

Turn-On DelayTime

6 7 nC

1.3 nC

1.8 nC
3 ns

VGS=10V, VDS=15V, RL=2.6Ω,
R

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T

Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to lead R

θJA

GEN

=3Ω

25 ns

4 ns

IF=5.8A, dI/dt=100A/µs
IF=5.8A, dI/dt=100A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and lead to ambient.

θJL

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

8.5 ns

2.6

nC

Rev 8: Dec 2011 www.aosmd.com Page 2 of 5

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

3V

4.5V

3V

4.5V

40

40

10V

10V

35

35
30

30
25

25

(A)

(A)

20

20

D

D

I

I

15

15
10

10

5

5
0

0

0 1 2 3 4 5

0 1 2 3 4 5

VDS(Volts)

Fig 1: On-Region Characteristics (Note E)

Fig 1: On-Region Characteristics (Note E)

30

30

25

25

Ω

Ω)

Ω

Ω)

Ω

Ω

Ω

Ω

(m

(m

20

20

DS(ON)

DS(ON)

R

R

15

15

10

10

0 5 10 15 20

0 5 10 15 20

Figure 3: On-Resistance vs. Drain Current and Gate

Figure 3: On-Resistance vs. Drain Current and Gate

VDS(Volts)

VGS=4.5V

VGS=4.5V

VGS=10V

VGS=10V

Voltage (Note E)

Voltage (Note E)

ID(A)

ID(A)

VGS=2V

VGS=2V

2.5V

2.5V

15

15

VDS=5V

VDS=5V

12

12

9

9

(A)

(A)

D

D

I

I

6

6

25°C

(Note E)

(Note E)

25°C

VGS=10V

VGS=10V
Id=5.8A

Id=5.8A

125°C

3

3

0

0

0 0.5 1 1.5 2 2.5 3

0 0.5 1 1.5 2 2.5 3

1.8

1.8

1.6

1.6

1.4

1.4

1.2

1.2

1

1

Normalized On-Resistance

Normalized On-Resistance

0.8

0.8

125°C

VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

Figure 2: Transfer Characteristics (Note E)

0 25 50 75 100 125 150 175

0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

Figure 4: On-Resistance vs. Junction Temperature

VGS(Volts)

VGS=4.5V

VGS=4.5V
Id=5A

Id=5A

Temperature (°C)

Temperature (°C)

AO3400

17

5
2

10

0

18

50

40

Ω

Ω)

Ω

Ω

(m

30

DS(ON)

R

20

10

0 2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

VGS(Volts)

(Note E)

ID=5.8A

125°C

25°C

1.0E+01

1.0E+00

1.0E-01

(A)

1.0E-02

S

I

1.0E-03

1.0E-04

1.0E-05

40

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0

Figure 6: Body-Diode Characteristics (Note E)

VSD(Volts)

Rev 8: Dec 2011 www.aosmd.com Page 3 of 5