Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 8/99A
Low Capacitance High Voltage
Schottky Diode
Features
■ Silicon Schottky Diode for Detector
Applications
■ Ultra Small SC-79 Package
■ Designed for High Volume, Low Cost
Applications
■ Available in Tape and Reel Packaging
SMS3925-079
Description
The SMS3925-079 is a 40 V, 0.6 pF RF Schottky diode
designed for use as a level detector in wireless handsets
and for general purpose switching applications. The
SMS3925-079 is packaged in the surface mount
miniature SC-79 package and is designated for low cost,
high volume applications.
Characteristic Value
Reverse Voltage (VR) 40 V
Forward Current - 1 mS Pulse (IF)1 A
Forward Current - Steady State (IF) 50 mA
Power Dissipation (PD) 250 mW
Storage Temperature (TST) -65°C to +150°C
Operating Temperature (TOP) -65°C to +150°C
Junction Temperature (TJ) 150°C
Electrostatic Discharge (ESD) - Class 1B
Human Body Model (HBM)
Absolute Maximum Ratings
Preliminary
Parameter Condition Min. Typ. Max. Unit
Reverse Current (IR)V
R
= 40 V 10 uA
Capacitance (CT)
1
VR= 0 V, F = 1 MHz 0.48 0.6 pF
Forward Voltage (VF)I
F
= 1 mA 0.57 0.62 0.67 V
Electrical Specifications at 25°C
1. Capacitance is total capacitance (CT), junction capacitance (CJ) + package capacitance (CP).