ALPHA DMK8001-000, DMK2790-000, DMK2783-000, DMK2308-000 Datasheet
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 3/00A
GaAs Flip Chip Schottky Diodes
Features
■ Designed for High Volume Designs
■ High Frequency (20–100 GHz)
■ Exceeds Environmental Requirements for
MIC & Hybrid Applications
■ Designed for Low Junction Capacitance
and Low Series Resistance
■ Applications Include PCN Mixers and
Circuits, As Well As Low Power, Fast
Switching
■ Low Parasitic Flip Chip Configuration
Description
This new series of GaAs Schottky barrier diodes offer high
performance at commercial market prices. They are
designed for low junction capacitance, as well as low series
resistance. Diodes are designed for MIC work (hard and soft
substrates), but the leadless design eliminates the
problems associated with mounting of beam lead diodes.
Due to its rigid construction, it exceeds environmental
requirements for MIC and hybrid applications.Diodes can
be supplied on expandable film frame for high speed pick
and place process. Standard packing will be in a gel pack.
Flexible conductive epoxy is the most effective
method for circuitry attachments. Standard mounting
temperatures should not exceed 175°C.
Single - DMK2783-000, DMK2790-000
Anti-Parallel - DMK2308-000
Series Pair - DMK8001-000
Electrical Specifications at 25°C
1. VBcannot be measured nondestructively in anti-parallel configuration.
2. C
T
= junction capacitance plus 0.02 pF (overlay).
Recommended V
B
1
C
T
2
Frequency @ 10 µµA 0 V, 1 MHz RS@ 10 mA VF@ 1 mA Single Series Pair Anti-Parallel
(GHz) (V) (pF) (ΩΩ) (mV)
Min. Max. Max. Min. Max. 540-011 540-012 540-025
20–100 3.0 0.03 0.05 9 680 780 DMK2783-000
20–100 3.0 0.04 0.07 7 650 750 DMK2790-000 DMK2308-000
20–100 3.0 0.05 0.08 7 650 750 DMK8001-000
Histogram
VF 1 mA (mV)
680 700 720 740
Number of Obs
0
5
10
15
20
25
30
35
40
45
50
55
60
65
VF = Mixer
DMK2790
x = 719 mV
σ = 6.3 mV
Capacitance/Voltage Variation
Bias Voltage (V)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Device Capacitance (pF)
0.028
0.032
0.036
0.040
0.044
0.048
0.052
0.056
0.060
0.064
0.068
0.072
0.076
0.080
Histogram
RT 10 mA (Ω)
4.0 4.5 5.0 5.5 6.0
Number of Obs
0
11
22
33
44
55
66
77
88
99
110
121
132
143
154
165
RT = Mixer
DMK2790
x = 5.0 Ω
σ = 0.25 Ω
x = 5.0 σ = 0.25
Histogram
Capacitance 0 V (pF)
0.055 0.060 0.065 0.070
Number of Obs
0
5
10
15
20
25
30
35
40
45
50
55
60
Aug 0.063 pF SD = 0.002 pF
CJ 0.0063 pF
Average
0.0014 pF SD
Typical Parameter Distribution on Wafer
GaAs Flip Chip Schottky Diodes
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 3/00A
Spice Parameters (Per Junction)
I
S
R
S
T
D
CJ0E
G
V
J
B
V
I
BV
Amp
ΩΩ
nSpFmeVeVXTIFC V A
0.5 E–12 4 1.05 1E–11 0.05 0.26 1.43 0.82 2 0.5 4.0 1E–05
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