ALPHA AW002R2-12 Datasheet
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 3/99A
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics
5
Rise, Fall (10/90% or 90/10% RF) 6 ns
On, Off (50% CTL to 90/10% RF) 12 ns
Video Feedthru 30 mV
Input Power for 1 dB Compression 5 V 0.9 GHz +35 dBm
10 V 0.9 GHz +40 dBm
Intermodulation Intercept Point For Two-tone Input Power +13 dBm
IP2 0.9 GHz +75 dBm
IP3 0.9 GHz +63 dBm
Control Voltages V
Low
= -12.0 V ≤V
Low
≤ 0 V, 500 µA Max.
V
High
= 0 V ≤V
High
≤ +12.0 V, 500 µA Max.
Differential = + 5.0 V ≤ (V
High
– V
Low
) < +12.0 V
GaAs SPDT IC 10 Watt T/R Switch
DC–2.5 GHz
Features
■ T/R Switch
■ High Isolation (30 dB @ 0.9 GHz)
■ Designed for Mobile Radio Applications
■ P
-1 dB
≥ 10 W @ 0.9 GHz
■ High Intercept Point (IP3 +63 dBm,@ 0.9 GHz)
AW002R2-12
Description
The AW002R2-12 is a high power IC FET SPDT switch
in a plastic SOIC-8 package. This switch has been
designed for use where extremely high linearity is
required.It can be controlled with positive, negative or a
combination of both voltages. Some standard
implementations include antenna changeover, T/R and
diversity switching over 2 W. This switch can be used in
many analog and digital wireless communication systems
including cellular, GSM and PCS applications.
Parameter
1
Frequency
2
Min. Typ. Max. Unit
Insertion Loss
3
DC–0.5 GHz 0.7 0.8 dB
DC–1.0 GHz 0.8 0.9 dB
DC–2.5 GHz 1.0 1.1 dB
Isolation DC–0.5 GHz 33 37 dB
DC–1.0 GHz 28 30 dB
DC–2.5 GHz 20 22 dB
VSWR
4
DC–1.0 GHz 1.2:1 1.4:1 dB
DC–2.5 GHz 1.5:1 1.7:1 dB
Electrical Specifications at 25°C (0, -5 V)
0.049
(1.24 mm)
0.016
(0.41 mm)
0.016 MAX.
(0.41 mm) x
45˚ CHAMFER
PIN 1
0.197 (5.00 mm)
0.189 (4.80 mm)
0.068
(1.73 mm) MAX.
0.010 (0.25 mm)
0.004 (0.10 mm)
0.010 (0.25 mm)
0.007 (0.17 mm)
0.158 (4.00 mm)
0.150 (3.80 mm)
8˚
MAX.
0.020 (0.51 mm) MAX.
0.244 (6.20 mm)
0.228 (5.80 mm)
0.050 (1.27 mm) BSC
PIN 8
PIN 1
INDICATOR
Operating Characteristics at 25°C (0, -5 V)
SOIC-8
1.All measurements made in a 50 Ω system, unless otherwise specified.
2. DC = 300 kHz.
3. Insertion loss changes by 0.003 dB/°C.
4. Insertion loss state.
5.Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
GaAs SPDT IC 10 Watt T/R Switch DC–2.5 GHz AW002R2-12
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 3/99A
-40˚C
25˚C
85˚C
1.2
1.0
0.8
0.6
0.4
0.2
1.0
dB
2.0 3.0DC
Frequency (GHz)
Insertion Loss vs. Frequency
Frequency (GHz)
VSWR vs. Frequency
1.5
1.4
1.3
1.2
1.1
1.0
1
DC 2 3
40
35
30
25
20
45
Frequency (GHz)
PIN at 1 dB Compression vs.
Frequency and Control Voltage
1 2 3
P
IN
(dBm)
-10 V
-5 V
DC
50
40
30
20
10
Frequency (GHz)
Isolation vs. Frequency
dB
2.0DC 1.0 3.0
60
Typical Performance Data (0, -5 V)
J
1
V
1
V
2
GND
C
BL
C
BL
C
BL
GND
GND
J
3
J
2
1 2 3 4
8 7 6 5
Characteristic Value
RF Input Power 11 W > 0.9 GHz,
0, -12 V
Control Voltage (V
High
– V
Low
) < 12 V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
Θ
JC
85°C/W
Absolute Maximum Ratings
V
1
V
2
J1–J
2
J1–J
3
V
Low
V
High
Insertion Loss Isolation
V
High
V
Low
Isolation Insertion Loss
Truth Table
Pin Out
V
Low
= 0 to -12.0 V.
V
High
= 0 to +12.0 V.
Differential = +5.0 V ≤(V
High
– V
Low
) < +12.0 V.
Refer to Application Notes for further information on
differential voltage operation.
External DC blocking capacitors (C
BL
) are required only if V
High
> 0.0 V.
C
BL
= 100 pF for operation >500 MHz.
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