ALPHA AM038R1-00 Datasheet

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com 1

Specifications subject to change without notice. 2/00A

33–43 GHz GaAs MMIC
Image Rejection Balanced Mixer

Features

■ Low Conversion Loss, 9 dB

■ Low LO Power Requirement, 8 dBm

■ Image Rejection, 18 dB

■ No DC Bias Required

■ Requires External IF 90° Hybrid

Description

Alpha’s image rejection balanced GaAs Schottky diode
mixer has a typical conversion loss of 9 dB at an LO power
level as low as 8 dBm over the band 33–43 GHz. An
external 90° IF hybrid is required to combine the IF1and
IF2signals at the desired IF frequency. The chip uses
Alpha’s proven Schottky diode technology, and is based
upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. All chips are screened for
DC diode parameters and lot samples are RF measured
to guarantee performance.This device is recommended
for applications requiring down conversion.

Dimensions indicated in mm.
All pads are ≥ 0.07 mm wide.
Chip thickness = 0.1 mm.

Chip Outline

Parameter Symbol Min. Typ.

2

Max. Unit

RF and LO Frequency Range FRF, F

LO

33–43 GHz

IF Frequency Range F

IF

0–3 GHz

LO Power Level P

LO

8–14 dBm

Conversion Loss

1

L

C

9dB

Image Rejection

1

IR 18 dB

RF and LO Return Loss

1

RLRF, RL

LO

12 dB

LO to RF Isolation

1

ISO

LO-RF

12 dB

LO to IF Isolation

1

ISO

LO-IF

23 dB

RF Input 1 dB Compression Point

1

P

1 dB

7 dBm

Individual Diode Series Resistance R

S

3.0 Ω

Electrical Specifications at 25°C

1

50 OHMS50 OHMS

OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92

OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92

0.000

0.000

1.785

0.890

2.010

1.258

0.085

0.489

0.890

0.191

0.983

1.133

1.925

0.985

1.131

Absolute Maximum Ratings

Characteristic Value

Operating Temperature -55°C to +125°C

Storage Temperature -65°C to +150°C

Total Input Power (RF + LO) 23 dBm

AM038R1-00

1. Not measured on a 100% basis.

2. Typical represents the median parameter value across the specified
frequency range for the median chip.

33–43 GHz GaAs MMIC Image Rejection Balanced Mixer AM038R1-00

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com

Specifications subject to change without notice. 2/00A

Performance vs. LO Power

F

RF

= 40 GHz, FLO = 38 GHz, PRF = -10 dBm

LO Power (dBm)

Conversion Loss (dB)

Return Loss & Isolation (dB)

6

8

10

12

14

16

7 9 11 13 15 17 19

0

10

20

30

40

50

Conversion Loss

LO Return Loss

LO to RF Isolation

LO to IF Isolation

LO Power (dBm)

Image Rejection vs. LO Power

F

RF

= 40 GHz, FLO = 38 GHz, PRF = -10 dBm

Image Frequency = 36 GHz

0

5

10

15

20

25

7 9 11 13 15 17 19

Image Rejection (dB)

LO Frequency (GHz)

Image Rejection (dB)

0

5

10

15

20

25

31 32 33 34 35 36 37 38

Image Rejection vs. LO Frequency

F

RF

= FLO + 2 GHz, PLO = 10 dBm

Image Frequency = F

LO

- 2 GHz

1

50 OHMS50 OHMS

OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92

OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92

RF

LO

IF

1

IF

2

90˚ Phase Shifter/Splitter

0˚ Splitter

LO

IF

1

IF

2

RF

LO Frequency (GHz)

Conversion Loss (dB)

Return Loss & Isolation (dB)

6

8

10

12

14

16

31 32 33 34 35 36 37 38

0

10

20

30

40

50

Conversion Loss

LO Return Loss

LO to RF Isolation

LO to IF Isolation

Performance vs. LO Frequency

F

RF

= FLO + 2 GHz, PLO = 10 dBm

Typical Performance Data

Wire Bonding Configuration Circuit Schematic

IF ports bonded to IF hybrid.