ALPHA AFP02N8-213, AFP02N8-212 Datasheet

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com 1

Specifications subject to change without notice. 6/99A

General Purpose Packaged PHEMT Chips

Features

■ Low Noise Figure, 1.55 dB @ 4 GHz

■ High Associated Gain, 13 dB @ 4 GHz

■ High MAG, > 15 dB @ 4 GHz

■ 0.7 µm Ti/Pd/Au Gates

■ Passivated Surface

■ Low Cost Metal Ceramic Package

■ Available with Two Lead Lengths

■ Available in Tape and Reel Packaging

Description

The AFP02N8-212, 213 are general purpose packaged
PHEMT chips that have excellent gain and noise
performance through X band, making them suitable for a
wide range of commercial applications. The devices
employ 0.7 µm Ti/Pd/Au gates and surf ace passiv ation to
ensure a rugged, reliable part. Available in metal cer amic
packages with a choice of two lead lengths. The
components are also available in tape and reel and are
ready for automatic insertion equipment.

AFP02N8-212, AFP02N8-213

Parameter Test Conditions Min. Typ. Max. Unit

Saturated Drain Current (I

DSS

)V

DS

= 2 V, VGS= 0 V 25.0 55.0 90.0 mA
Transconductance (gm) VDS= 2 V, IDS= 15 mA 30.0 45.0 mS
Pinch-off Voltage (VP) VDS= 2 V, IDS= 0.3 mA -0.4 -1.2 -2.0 V
Gate to Source IGS= -200 µA -6.0 8.0 V

Breakdown V oltage (V

bgs

)

Noise Figure (NF)

VDS= 2 V, IDS= 15 mA, F = 4 GHz

1.55 2.0 dB

Associated Gain (GA) 12.0 13.2 dB

Electrical Specifications at 25°C

Source

Gate

Source

Drain

Drain

Source Gate

Source

212

213

Characteristic Value

Drain to Source Voltage (VDS) 6 V
Gate to Source Voltage (VGS) -3 V
Drain Current (IDS) I

DSS

Gate Current (IGS) 10 µA
Total Power Dissipation (PT) 300 mW
Storage Temperature (TST) -65 to +150°C
Channel Temperature (TCH) 175°C

Absolute Maximum Ratings

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com

Specifications subject to change without notice. 6/99A

General Purpose Packaged PHEMT Chips AFP02N8-212, AFP02N8-213

0

4

8

12

16

20

24

0

024681012141618

1

2

3

4

6

5

NF

MIN

(dB)

G

A

(dB)

Frequency (GHz)

RF Minimum Noise Figure (NF

MIN

) and

Associated Gain (G

A

) vs. Frequency (GHz)

VDS = 2 V, IDS = 15 mA

GA (dB)

NF

MIN

(dB)

100

0 1.0 1.5 2.50.5 2.0 3.0

50

0

VDS (V)

l

DS

(mA)

DC Drain Current (IDS) vs. Drain Voltage (VDS)
as a Function of Gate to Source Voltage (V

GS

)

0 5 10 15 20 25 30 4035

IDS (mA)

NF

MIN

(dB)

G

A

(dB)

RF Minimum Noise Figure (NF

MIN

) and

Associated Gain (G

A

) vs. Drain Current (IDS)

F = 12 GHz, VDS = 2 V

0

2

4

6

8

10

0

2

4

6

10

8

NF

MIN

(dB)

GA (dB)

100

0

-2.0 -1.0 0

100

0

50

50

1.0

gm (mS)

VGS (V)

l

DS

(mA)

VDS = 2 V

DC Drain Current (IDS) and

Transconductance (gm) vs.

Gate to Source Voltage (V

GS

)

Typical Performance Data

Freq. NF

MIN

ΓΓ

opt

(GHz) (dB) Mag. Ang. RN/50 GA(dB)

1 0.75 0.84 25.40 0.12 23.50
2 1.10 0.72 50.20 0.23 18.00
4 1.55 0.54 99.00 0.23 13.20
6 2.00 0.43 145.40 0.15 10.20

8 2.50 0.39 -171.80 0.16 8.10
10 3.00 0.39 -133.60 0.32 6.51
12 3.50 0.43 -100.10 0.66 5.82
14 4.00 0.48 -71.10 1.16 5.20
16 4.50 0.55 -45.90 1.77 4.51
18 5.00 0.60 -23.30 2.38 4.10

Typical Noise Parameters
(V

DS

= 2 V, IDS= 15 mA)