ALPHA AFM08P2-000 Datasheet

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com 1

Specifications subject to change without notice. 6/99A

Ka Band Power GaAs MESFET Chip

Features

■ 24 dBm Output Power @ 18 GHz

■ High Associated Gain, 8.5 dB @ 18 GHz

■ High Power Added Efficiency, 20%

■ Broadband Operation, DC–40 GHz

■ 0.25 µm Ti/Pd/Au Gates

■ Passivated Surface

■ Through-Substrate Via Hole Grounding

Description

The AFM08P2-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25 µm and a total
gate periphery of 800 µm.The device has e xcellent gain
and power performance through 40 GHz, making it
suitable for a wide range of commercial and military
applications in oscillator and amplifier circuits.It employs
Ti/Pd/Au gate metallization and surface passivation to
ensure a rugged, reliable part.Through-substrate via holes
are incorporated into the chip to facilitate low inductance
grounding of the source for improv ed high frequency and
high gain performance.

AFM08P2-000

Parameter Test Conditions Min. Typ. Max. Unit

Saturated Drain Current (I

DSS

)

VDS= 2 V, VGS= 0 V

175.0 265.0 360.0 mA
Transconductance (gm) 120.0 160.0 mS
Pinch-off Voltage (VP) VDS= 5 V, IDS= 2.0 mA 1.0 3.0 5.0 -V
Gate to Drain IGD= 800 µA 8.0 12.0 -V

Breakdown V oltage (V

bgd

)

Output Power at 1 dB 24.0 dBm
Compression (P

1 dB

)

Gain at 1 dB Compression (G

1 dB

)VDS= 5 V, IDS= 140 mA, F = 18 GHz 8.5 dB
Power Added Efficiency (ηadd) 20.0 %
Output Power at 1 dB 23.0 dBm

Compression (P

1 dB

)

Gain at 1 dB Compression (G

1 dB

) VDS= 5 V, IDS= 140 mA, F = 30 GHz 4.5 dB
Power Added Efficiency (ηadd) 10.0 %
Thermal Resistance (ΘJC) T

BASE

= 25°C 120.0 °C/W

Electrical Specifications at 25°C

0.395 mm

0.327 mm

Drain

Gate

0.655 mm

0.110 mm

0.110 mm

Characteristic Value

Drain to Source Voltage (VDS) 6 V
Gate to Source Voltage (VGS) -4 V
Drain Current (IDS) I

DSS

Gate Current (IGS) 2 mA
Total Power Dissipation (PT) 1.4 W
Storage Temperature (TST) -65 to +150°C
Channel Temperature (TCH) 175°C

Absolute Maximum Ratings

Chip thickness = 0.1 mm.

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com

Specifications subject to change without notice. 6/99A

Ka Band Power GaAs MESFET Chip AFM08P2-000

I-V

VDS (V)

l

DS

(mA)

0

0 1 2 3 54

60

120

180

240

300

-0.5 V

-1.0 V

-1.5 V

-2.0 V

-2.5 V

VGS = 0 V

Power Derating

0 50 100 150 200

Total Power Dissipation P

T

(W)

T

BASE

(˚C)

0

0.25

0.50

0.75

1.00

1.25

1.50

Typical Performance Data