Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 6/99A
Low Noise/Medium Power
GaAs MESFET Chips
Features
■ Low Noise Figure, 0.6 dB @ 4 GHz
■ 20 dBm Output Power @ 18 GHz
■ High Associated Gain, 13 dB @ 4 GHz
■ High Power Added Efficiency, 25%
■ Broadband Operation, DC–26 GHz
■ Available in Tape and Reel Packaging
Description
The AFM04P3-212, 213 are high performance power
GaAs MESFET chips having a gate length of 0.25 µm and
a total gate periphery of 400 µm. These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits.They
also have e xcellent noise performance and can be used
in the first and second stage of low noise amplifier design.
The AFM04P3 employs Ti/Pd/Au gate metallization and
surface passivation to ensure a rugged, reliable part.
AFM04P3-212, AFM04P3-213
Parameter Test Conditions Min. Typ. Max. Unit
Saturated Drain Current (I
DSS
) 90.0 140.0 190.0 mA
Transconductance (gm)
VDS= 2 V, VGS= 0 V
60.0 80.0 mS
Pinch-Off Voltage (VP)V
DS
= 5 V, IDS= 1 mA 1.0 3.0 5.0 -V
Gate to Drain Breakdown IGD= -400 µA 8.0 12.0 -V
Voltage (V
bgd
)
Noise Figure (NF) 0.6 dB
Associated Gain (GA)
VDS= 2 V, IDS= 25 mA, F = 4 GHz
13.8 dB
Output Power at 1 dB 20.0 dBm
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
VDS= 5 V, IDS= 70 mA, F = 18 GHz
9.0 dB
Power Added Efficiency (ηadd) 25.0 %
Electrical Specifications at 25°C