ALPHA AFM04P3-000 Datasheet

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com 1

Specifications subject to change without notice. 6/99A

Low Noise/Medium Power
GaAs MESFET Chip

Features

■ 21 dBm Output Power @ 18 GHz

■ High Associated Gain, 9 dB @ 18 GHz

■ High Power Added Efficiency, 25%

■ Broadband Operation, DC–26 GHz

■ 0.25 µm Ti/Pd/Au Gates

■ Passivated Surface

Chip Layout

Description

The AFM04P3-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25 µm and a total
gate periphery of 400 µm.The device has e xcellent gain
and power performance through 26 GHz, making it
suitable for a wide range of commercial and military
applications in oscillator and amplifier circuits.The device
employs Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part.

AFM04P3-000

Parameter Test Conditions Min. Typ. Max. Unit

Saturated Drain Current (I

DSS

)

VDS= 2 V, VGS= 0 V

90.0 140.0 190.0 mA
Transconductance (gm) 60.0 80.0 mS
Pinch-off Voltage (VP) VDS= 5 V, IDS= 1 mA 1.0 3.0 5.0 -V
Gate to Drain IGD= -400 µA 8.0 12.0 -V

Breakdown V oltage (V

bgd

)
Noise Figure (NF) 0.6 dB
Associated Gain (GA)

VDS= 2 V, IDS= 25 mA, F = 4 GHz

13.8 dB

Output Power at 1 dB 21.0 dBm
Compression (P

1 dB

)

Gain at 1 dB Compression (G

1 dB

)

VDS= 5 V, IDS= 70 mA, F = 18 GHz

9.0 dB
Power Added Efficiency (ηadd) 25.0 %
Thermal Resistance (ΘJC) T

BASE

= 25°C 250.0 °C/W

Electrical Specifications at 25°C

Characteristic Value

Drain to Source Voltage (VDS) 6 V
Gate to Source Voltage (VGS) -4 V
Drain Current (IDS) I

DSS

Gate Current (IGS) 1 mA
Total Power Dissipation (PT) 700 mW
Storage Temperature (TST) -65 to +150°C
Channel Temperature (TCH) 175°C

Absolute Maximum Ratings

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com

Specifications subject to change without notice. 6/99A

Low Noise/Medium Power GaAs MESFET Chip AFM04P3-000

I-V

0

30

60

90

120

150

0 1 2 3 4 5

-0.5 V

-1.0 V

-1.5 V

-2.0 V

-2.5 V

VDS (V)

l

DS

(mA)

VGS = 0 V

Power Derating

0

0.25

0.50

0.75

1.00

0 50 100 150 200

Total Power Dissipation P

T

(W)

T

BASE

(˚C)

Typical Performance Data

Typical S-Parameters (V

DS

= 5 V, IDS= 70 mA)

Freq.

S

11

S

21

S

12

S

22

MAG

(GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. k (dB)

2 0.969 -37.191 5.040 153.579 0.029 68.605 0.550 -18.296 0.100 22.364
3 0.958 -54.069 4.740 141.521 0.041 59.064 0.533 -26.529 0.150 20.613
4 0.935 -69.318 4.398 130.518 0.051 50.587 0.514 -33.959 0.200 19.278
5 0.913 -82.889 4.050 120.568 0.058 43.171 0.497 -40.630 0.250 18.247
6 0.893 -94.881 3.719 111.573 0.064 36.722 0.482 -46.663 0.299 17.658
7 0.877 -105.468 3.415 103.398 0.068 31.107 0.471 -52.183 0.349 17.104
8 0.863 -114.843 31.420 95.911 0.071 26.196 0.462 -57.310 0.398 16.464

9 0.852 -123.189 2.898 88.991 0.073 21.873 0.456 -62.138 0.447 15.986
10 0.843 -130.670 2.683 82.540 0.074 18.042 0.453 -66.738 0.496 15.566
11 0.836 -137.422 2.492 67.477 0.075 14.624 0.452 -71.161 0.544 15.193
12 0.831 -143.563 2.322 70.736 0.076 11.558 0.453 -75.442 0.593 14.858
13 0.826 -149.188 2.171 65.267 0.076 8.796 0.455 -79.606 0.641 14.447
14 0.823 -154.374 2.036 60.027 0.076 6.302 0.459 -83.671 0.688 14.285
15 0.821 -159.187 1.914 54.985 0.065 4.047 0.464 -87.648 0.735 14.037
16 0.819 -163.679 1.805 50.114 0.074 2.007 0.470 -91.546 0.781 13.811
17 0.818 -167.895 1.605 45.393 0.074 0.167 0.477 -95.372 0.827 13.063
18 0.817 171.872 1.615 40.805 0.073 -1.486 0.484 -99.129 0.872 13.412
19 0.817 -175.369 1.532 36.335 0.072 -2.961 0.492 -102.821 0.916 13.235
20 0.817 -179.221 1.456 31.973 0.071 -4.266 0.501 -106.451 0.959 13.071
21 0.818 177.359 1.386 27.760 0.060 -5.405 0.510 -110.021 1.001 12.753
22 0.819 174.083 1.321 23.535 0.069 -6.382 0.520 -113.533 1.041 11.534
23 0.820 170.936 1.261 19.445 0.068 -7.201 0.530 -116.989 1.069 10.915
24 0.821 167.905 1.205 15.343 0.067 -7.863 0.540 -120.389 1.116 10.431
25 0.822 164.969 1.512 11.498 0.066 -8.371 0.551 -123.737 1.150 10.024
26 0.824 162.148 1.103 6.633 0.065 -8.728 0.561 -127.031 1.181 9.671

S-Parameters include the effects of two 0.8 mil diameter bond wires, each 10 mil long, to each of the gate and drain terminals.