ALPHA AF002N2-32 Datasheet

Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com 1
Specifications subject to change without notice. 3/99A
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics
4
Rise, Fall (10/90% or 90/10% RF) 7 ns On, Off (50% CTL to 90/10% RF) 10 ns Video Feedthru 20 mV
Input Power for 1 dB Compression For All Attenuation Levels 0.05 GHz -3 dBm
Control Voltages V
Low
= 0 to -0.2 V @ 20 µA Max.
V
High
= -5 V @ 50 µA Max.to -8 V @ 200 µA Max.
VS= V
High
± 0.2 V
GaAs IC 15 dB Voltage Variable Attenuator Single Control DC–2 GHz
Features
Single Voltage Control, Positive or Negative Voltage
Low Cost SOT-143 Package
15 dB Dynamic Range
Non-Reflective
AF002N2-32
0.021 (0.53 mm)
0.015 (0.38 mm)
0.075
(1.91 mm)
0.120 (3.05 mm)
0.105 (2.67 mm)
0.098 (2.49 mm)
0.083 (2.11 mm)
0.055 (1.40 mm)
0.047 1.19 mm)
0.037 (0.94 mm)
0.030 (0.76 mm)
0.035 (0.89 mm)
0.004 (0.19 mm)
0.001 (0.03 mm)
8˚0’ MAX.
0.010
(0.25 mm)
0.005 (0.13 mm)
0.006 (0.15 mm)
0.003 (0.08 mm)
Description
The AF002N2-32 is a single control non-reflective IC FET VVA ideal for AGC applications. Its low DC drain characteristic and size make it suitable for PCS and portable cellular markets.A positive control voltage ma y be used by adding 2 DC blocking capacitors (CBL) and 1 bypass capacitor (CBP).
Operating Characteristics at 25°C (0, -5 V)
Parameter
1
Frequency
2
Min. Typ. Max. Unit
Insertion Loss (V1 = -5 V)
3
DC–0.5 GHz 3.1 3.3 dB DC–1.0 GHz 3.3 3.5 dB DC–2.0 GHz 3.5 3.8 dB
Attenuation (V1= 0 V) DC–0.5 GHz 18 20 dB
DC–1.0 GHz 14 16 dB DC–2.0 GHz 10 12 dB
VSWR (V1= 0 to -5 V) DC–2.0 GHz 2.0:1 2.2:1
Electrical Specifications at 25°C (0, -5 V)
SOT-143
1.All measurements made in a 50 system, unless otherwise specified.
2. DC = 300 kHz.
3. Insertion loss changes by 0.003 dB/°C.
4.Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
2 Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 3/99A
GaAs IC 15 dB Voltage Variable Attenuator Single Control DC–2 GHz AF002N2-32
5
4
3
2
1 2
1
Frequency (GHz)
Insertion Loss vs. Frequency
dB
DC
+85˚C
-40˚C
Typical Performance Data (0, -5 V)
4
21
J
2
J
1
C
BP
V
S
V
1
10 k
C
BL
C
BL
GND
3
Characteristic Value
RF Input Power 10 mW > 500 MHz 0/-8 V
4 mW @ 50 MHz 0/-8 V Control Voltage +0.2 V, -10 V Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
Θ
JC
25°C/W
Absolute Maximum Ratings
Optimum Tuning for Maximum Attenuation
Pin Out
Note: Operating this device above any of these parameters may cause irreversible damage.
-5
-4
-3
-2
-1
0
Attenuation (dB)
Attenuation vs. Control Voltage
3 6 9 12 15 18 21
F = 500 MHz
40
35
30
25
20
15
Attenuation (dB)
Attenuation vs. IP3
IP3 (dBm)
Two Tone Testing
at 70 and 71 MHz
PIN = 0 dBm
3 6 9 12 15 18 21
V
1
Attenuation J1–J
2
-5 Insertion Loss 0 Full Attenuation
Truth Table
Negative Voltage Operation
Positive Voltage Operation
V
1
Attenuation J1–J
2
V
High
Full Attenuation
0 Insertion Loss
V
High
= +5 V to +8 V (VS= V
High
± 0.2 V).
External components for positive voltage operation only. C
BL
= 100 pF.
F (MHz) C
BP
Typical Maximum Attenuation
130 220 pF 21 730 15 pF 21
1925 1.6 pF 21
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