ALPHA AA038N2-00, AA038N1-00 Datasheet

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com 1

Specifications subject to change without notice. 12/99A

28–40 GHz GaAs MMIC
Low Noise Amplifier

Features

■ Single Bias Supply Operation (4.5 V)

■ 3.8 dB Typical Noise Figure at 38 GHz

■ 17 dB Typical Small Signal Gain

■ 0.25 µm Ti/Pd/Au Gates

■ 100% On-Wafer RF, DC and Noise Figure

Testing

■ 100% Visual Inspection to MIL-STD-883
MT 2010

Chip Outline

AA038N1-00, AA038N2-00

Description

Alpha’s four-stage reactively-matched 28–40 GHz GaAs
MMIC low noise amplifier has typical small signal gain of
17 dB with a typical noise figure of 3.8 dB at 38 GHz. The
chip uses Alpha’s proven 0.25 µm low noise PHEMT
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process.

Parameter Condition Symbol Min. Typ.

3

Max. Unit

Drain Current I

DS

35 50 mA

Small Signal Gain F = 28–40 GHz G 15 17 dB

Noise Figure F = 38 GHz NF 3.8 4.2 dB

Input Return Loss F = 28–40 GHz RL

I

-10 -6 dB

Output Return Loss F = 28–40 GHz RL

O

-8 -6 dB

Output Power at 1 dB Gain Compression

1

F = 38 GHz P

1 dB

6 dBm

Thermal Resistance

2

Θ

JC

101 °C/W

Electrical Specifications at 25°C (VDS= 4.5 V)

AA038N1-00

Parameter Condition Symbol Min. Typ.

3

Max. Unit

Drain Current I

DS

35 50 mA

Small Signal Gain F = 37–39.5 GHz G 17 19 dB

Noise Figure F = 38 GHz NF 3.8 4.2 dB

Input Return Loss F = 37–39.5 GHz RL

I

-14 -6 dB

Output Return Loss F = 37–39.5 GHz RL

O

-11 -8 dB

Output Power at 1 dB Gain Compression

1

F = 38 GHz P

1 dB

6 dBm

Thermal Resistance

2

Θ

JC

101 °C/W

AA038N2-00

1. Not measured on a 100% basis.

2. Calculated value based on measurement of discrete FET.

3. Typical represents the median parameter value across the specified
frequency range for the median chip.

0.000

0.000

0.588

0.246

1.264

1.813

2.146

2.710

2.600

0.087

0.124

1.355

1.560

1.961

2.183

2.445

2.599

1.267

1.274

Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.

Characteristic Value

Operating Temperature (TC) -55°C to +90°C

Storage Temperature (TST) -65°C to +150°C

Bias Voltage (VD)6 V

DC

Power In (PIN) 10 dBm

Junction Temperature (TJ) 175°C

Absolute Maximum Ratings

28–40 GHz GaAs MMIC Low Noise Amplifier AA038N1-00, AA038N2-00

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com

Specifications subject to change without notice. 12/99A

-30

-20

-10

0

10

20

30

18 20 22 24 26 28 30 32 34 36 38 40 42

Frequency (GHz)

(dB)

Typical Small Signal Performance

S-Parameters (V

D

= 4.5 V)

S

21

S

11

S

22

Typical Gain and Noise Figure

Performance for Three Bias Conditions

Frequency (GHz)

Noise Figure (dB)

Gain (dB)

2

3

4

5

6

7

8

9

10

11

18 20 22 24 26 28 30 32 34 36 38 40 42

13

15

17

19

21

23

25

27

29

31

Gain* 3.0 V, 5.5 V

Gain 2.5 V

Gain 4.5 V

NF 4.5 V

NF 2.5 V

NF* 3.0 V, 5.5 V

Typical Gain and Noise Figure

Performance vs. Drain Bias (V

D1

= VD2)

VD1 and VD2 (V)

1.0 2.0 3.0 4.0 5.0 6.0

38 GHz Gain (dB) and

38 GHz Noise Figure (dB)

Drain Current (mA)

3

5

7

9

11

13

15

17

19

21

23

16

18

20

22

24

26

28

30

32

34

36

Gain

I

D

NF

Typical Performance Data

V

D2

RF IN RF OUT

.01 µF 50 pF

.01 µF 50 pF

V

D1

Bias Arrangement

D

G

Detail A

RF IN

RF OUT

G

D

G

D

G

D

G

D

V

D1

V

D2

SEE

DETAIL

A

Circuit Schematic

For biasing on, adjust VDfrom zero to the desired value
(4.5 V recommended). For biasing off, reverse the biasing on procedure.

*Special Bias: V

D1

= 3.0 V, VD2= 5.5 V