ALPHA AA038N3-00, AA035P3-00 Datasheet

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com 1

Specifications subject to change without notice. 1/01A

31–35 GHz GaAs MMIC
Driver Amplifier

Features

■ Single Bias Supply Operation (5 V)

■ 19 dB Typical Small Signal Gain

■ 17 dBm Typical P

1 dB

Output Power

at 35 GHz

■ 0.25 µm Ti/Pd/Au Gates

■ 100% On-Wafer RF and DC Testing

■ 100% Visual Inspection to MIL-STD-883

MT 2010

Chip Outline

AA035P3-00

Description

Alpha’s three-stage reactively-matched Ka band GaAs
MMIC driver amplifier has a typical P

1 dB

of 17 dBm with
18 dB associated gain at 35 GHz.The chip uses Alpha’s
proven 0.25 µm MESFET technology, which is based upon
MBE layers and electron beam lithogr aphy f or the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate solder or epoxy die attach
processes.The amplifier is a self-bias design requiring a
single positive drain bias to one of any three bonding sites.
All chips are screened for S-parameters prior to shipment
for guaranteed performance. A broad range of
applications exist in both the high reliability and
commercial areas where high gain and power are
required.

Parameter Condition Symbol Min. Typ.

3

Max. Unit

Drain Current I

DS

275 350 mA
Small Signal Gain F= 31–35 GHz G 15 19 dB
Noise Figure

1

F= 35 GHz NF 10.5 dB

Input Return Loss F= 31–35 GHz RL

I

-14 -10 dB

Output Return Loss F= 31–35 GHz RL

O

-16 -10 dB

Output Power at 1 dB Gain Compression F= 35 GHz P

1 dB

15 17 dBm

Saturated Output Power F= 35 GHz P

SAT

16 19 dBm

Thermal Resistance

2

Θ

JC

66 °C/W

Electrical Specifications at 25°C (VDS= 5 V)

1. Not measured on a 100% basis.

2. Calculated value based on measurement of discrete FET.

3.Typical represents the median parameter value across the specified
frequency range for the median chip.

0.000

0.000

1.250

1.905

3.810

1.554

2.471

3.386

Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.

Characteristic Value

Operating Temperature (TC) -55°C to +90°C
Storage Temperature (TST) -65°C to +150°C
Bias Voltage (VD)7 V

DC

Power In (PIN) 19 dBm
Junction Temperature (TJ) 175°C

Absolute Maximum Ratings

31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com

Specifications subject to change without notice. 1/01A

-30

-20

-10

0

10

20

30

30 31 32 33 34 35 36

Frequency (GHz)

(dB)

Typical Small Signal Performance

S-Parameters (V

DS

= 5 V)

S

21

S

11

S

22

PIN (dBm)

P

OUT

(dBm)

10

12

14

16

18

20

-10 -8 -6 -4 -2 0 2 4

Output Characteristic as a

Function of Input Drive Level

(F = 35 GHz, V

DS

= 5 V)

Typical Performance Data

5 V

.01 µF 50 pF

RF IN RF OUT

Bias Arrangement

Detail A

RF IN RF OUT

V

DS

SEE

DETAIL A

Circuit Schematic

For biasing on, adjust VDSfrom zero to the desired value
(4 V–6 V recommended).For biasing off, reverse the biasing on procedure.