ALPHA AA035N2-00, AA035N1-00 Datasheet
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 7/00A
28–36 GHz GaAs MMIC
Low Noise Amplifier
Features
■ Dual Bias Supply Operation (4.5 V)
■ 2.8 dB Typical Noise Figure at 32 GHz
■ 12 dB Typical Small Signal Gain
■ 0.25 µm Ti/Pd/Au Gates
■ 100% On-Wafer RF, DC and Noise Figure
Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA035N1-00, AA035N2-00
Description
Alpha’s two-stage balanced 28–36 GHz MMIC lo w noise
amplifier has typical small signal gain of 12 dB with a
typical noise figure of 2.6 dB at 32 GHz. The chip uses
Alpha’s prov en 0.25 µm low noise PHEMT technology, and
is based upon MBE layers and electron beam lithogr aphy
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate a conductiv e epoxy die
attach process.
Parameter Condition Symbol Min. Typ.
3
Max. Unit
Drain Current I
DS
70 90 mA
Small Signal Gain F = 28–36 GHz G 10 12 dB
Noise Figure F = 32 GHz NF 2.8 3.2 dB
Input Return Loss F = 28–36 GHz RL
I
-17 -12 dB
Output Return Loss F = 28–36 GHz RL
O
-20 -12 dB
Output Power at 1 dB Gain Compression
1
F = 35 GHz P
1 dB
10 dBm
Thermal Resistance
2
Θ
JC
50 °C/W
AA035N1-00 Electrical Specifications at 25°C (VDS= 4.5 V, ID= 70 mA)
Parameter Condition Symbol Min. Typ.
3
Max. Unit
Drain Current I
DS
70 90 mA
Small Signal Gain F = 28–36 GHz G 9 12 dB
Noise Figure F = 32 GHz NF 3.0 3.8 dB
Input Return Loss F = 28–36 GHz RL
I
-17 -12 dB
Output Return Loss F = 28–36 GHz RL
O
-20 -12 dB
Output Power at 1 dB Gain Compression
1
F = 35 GHz P
1 dB
10 dBm
Thermal Resistance
2
Θ
JC
50 °C/W
AA035N2-00 Electrical Specifications at 25°C (VDS= 4.5 V, ID= 70 mA)
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3.Typical represents the median parameter value across the specified
frequency range for the median chip.
0.269
0.000
0.000
0.116
0.627
0.985
1.343
1.701
2.059
2.417
2.690
1.598
2.370
2.255
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
28–36 GHz GaAs MMIC Low Noise Amplifier AA035N1-00, AA035N2-00
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 7/00A
-50
-40
-30
-20
-10
0
10
20
30 32 34 36 38 40
Frequency (GHz)
(dB)
Typical Small Signal Performance
S-Parameters (V
D
= 4.5 V)
S
21
S
22
S
12
S
11
-4
-2
0
2
4
6
8
10
12
14
-0.5 -0.4 -0.3 -0.2 -0.1 0
(VG)
(dB)
Typical 35 GHz Noise Figure and
Gain as a Function of Gate Voltage (VG)
Noise Figure
I
D
Gain
0
20
40
60
80
100
120
Drain Current (mA)
Typical Noise Figure Performance
vs. Frequency
2.0
2.5
3.0
3.5
4.0
4.5
5.0
30 32 34 36 38 40
Frequency (GHz)
Noise Figure (dB)
Typical Performance Data
V
G
RF IN RF OUT
VD = 4.5 V
.01 µF 50 pF .01 µF50 pF
V
G
VD = 4.5 V
.01 µF 50 pF .01 µF50 pF
Bias Arrangement
For biasing on, adjust VGfrom zero to the desired value
(-0.3 V typically is optimum).Then adjust V
D
from zero to the desired value
(4.5 V recommended).For biasing off, reverse the biasing on procedure.
Characteristic Value
Operating Temperature (TC) -55°C to +90°C
Storage Temperature (TST) -65°C to +150°C
Bias Voltage (VD) 5.5 V
DC
Power In (PIN) 16 dBm
Junction Temperature (TJ) 175°C
Absolute Maximum Ratings
Loading...