ALPHA AA032P1-00 Datasheet

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com 1

Specifications subject to change without notice. 12/99A

30–36 GHz GaAs MMIC
Power Amplifier

Features

■ Single Gate and Drain Biases

■ 25 dBm Typical P

1 dB

Output Power

at 31 GHz

■ 11 dB Typical Small Signal Gain

■ 0.25 µm Ti/Pd/Au Gates

■ 100% On-Wafer RF and DC Testing

■ 100% Visual Inspection to MIL-STD-883

MT 2010

Chip Outline

AA032P1-00

Description

Alpha’s two-stage reactively-matched Ka band GaAs
MMIC power amplifier has a typical P

1 dB

of 25 dBm with
10 dB associated gain and 15% power added efficiency
at 31 GHz. The chip uses Alpha’s proven

0.25 µm MESFET technology, and is based upon MBE
layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate solder or epoxy die attach
processes. Single gate and drain bias pads cover both
stages, with the added convenience that the chip can be
wire bonded from either side for either bias. All chips are
screened for gain, output power, efficiency and S­parameters prior to shipment for guaranteed performance.
A broad range of applications exist in both the military and
commercial areas where high power and gain are
required.

Parameter Condition Symbol Min. Typ.

2

Max. Unit

Drain Current (at Saturation) I

DS

400 450 mA

Small Signal Gain F = 30–31, 34–36 GHz G 8 11 dB

Input Return Loss F = 30–31, 34–36 GHz RL

I

-7 -6 dB

Output Return Loss F = 30–31, 34–36 GHz RL

O

-8 -6 dB

Output Power at 1 dB Gain Compression F = 31 GHz P

1 dB

24 25 dBm

Saturated Output Power F = 31 GHz P

SAT

25 27 dBm

Gain at Saturation F = 31 GHz G

SAT

8dB

Thermal Resistance

1

Θ

JC

42 °C/W

Electrical Specifications at 25°C (VDS= 6 V, VGS= -1 V)

1. Calculated value based on measurement of discrete FET.

2. Typical represents the median parameter value across the specified

frequency range for the median chip.

1.937

1.099

0.597

1.099

0.597

0.000

2.166

0.120

1.143

1.143

2.285

1.929

2.415

0.107

2.179

0.000

Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.

Characteristic Value

Operating Temperature (TC) -55°C to +90°C

Storage Temperature (TST) -65°C to +150°C

Bias Voltage (VD)7 V

DC

Power In (PIN) 22 dBm

Junction Temperature (TJ) 175°C

Absolute Maximum Ratings

30–36 GHz GaAs MMIC Power Amplifier AA032P1-00

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com

Specifications subject to change without notice. 12/99A

Typical Small Signal Performance

S-Parameters (VDS = 6 V)

0

5

10

15

-5

-15

-10

-20

-25

-35

-30

26 27 28 29 31 32 33 35 36 3730 34 38

Frequency (GHz)

S-Parameter (dB)

S

21

S

22

S

11

S

12

P

OUT

(dBm)

7 8 9 10 11 12 14 15 17 18 20 2113

PIN (dBm)

Typical Output Power Compression

16 19 22

16

17

18

19

20

21

22

23

24

25

26

27

28

P

OUT

28 GHz

P

OUT

31 GHz

P

OUT

35 GHz

Typical Performance Data

Bias Arrangement

Detail A

SEE

DETAIL A

RF IN RF OUT

V

G

G

D

D

D

D

D

D

G

G

G

G

G

V

D

V

G

V

D

D

G

VG = -1 V

VDS = 6 V

.01 µF 50 pF .01 µF50 pF

RF OUTRF IN

Circuit Schematic

The AA032P1-00 can be biased from either or both sides for both gate and
drain biases.
For biasing on, adjust V

GS

from zero to approximately -1 V. Adjust VDSfrom

zero to the desired value (4 V–6 V recommended). Adjust V

GS

to achieve the

desired I

DS

(400 mA recommended). For biasing off, reverse the biasing on

procedure.