ALPHA AA028P1-00 Datasheet
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 12/99A
27–29 GHz GaAs MMIC
Power Amplifier
Features
■ Single Bias Supply Operation (6 V)
■ 22 dBm Typical P
1 dB
Output Power
at 28 GHz
■ 13.5 dB Typical Small Signal Gain
■ 0.25 µm Ti/Pd/Au Gates
■ 100% On-Wafer RF and DC Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA028P1-00
Description
Alpha’s two-stage balanced Ka band GaAs MMIC
power amplifier has a typical P
1 dB
of 22 dBm with
12.5 dB associated gain and 10% power added efficiency
at 28 GHz. The chip uses Alpha’s proven 0.25 µm
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for S-parameters and power characteristics prior
to shipment for guaranteed performance. A broad range
of applications exist in both the commercial and high
reliability areas where high power and gain are required.
Parameter Condition Symbol Min. Typ.
2
Max. Unit
Drain Current (at Saturation) I
DS
300 400 mA
Small Signal Gain F = 27–29 GHz G 11 13.5 dB
Input Return Loss F = 27–29 GHz RL
I
-13 -10 dB
Output Return Loss F = 27–29 GHz RL
O
-16 -10 dB
Output Power at 1 dB Gain Compression F = 28 GHz P
1 dB
21 22 dBm
Saturated Output Power F = 28 GHz P
SAT
22 23 dBm
Gain at Saturation F = 28 GHz G
SAT
11 dB
Thermal Resistance
1
Θ
JC
51 °C/W
Electrical Specifications at 25°C (VDS= 6 V)
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
0.000
0.000
0.519
2.784
3.400
0.329
0.086
1.371
1.700
1.613
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic Value
Operating Temperature (TC) -55°C to +90°C
Storage Temperature (TST) -65°C to +150°C
Bias Voltage (VD)7 V
DC
Power In (PIN) 22 dBm
Junction Temperature (TJ) 175°C
Absolute Maximum Ratings
27–29 GHz GaAs MMIC Power Amplifier AA028P1-00
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 12/99A
-40
-30
-20
-10
0
10
20
26 28 30
32
S
11
S
12
S
21
S
22
Frequency (GHz)
(dB)
Typical Small Signal Performance
S-Parameters (V
DS
= 6 V)
27 29 31
Frequency (GHz)
Output Characteristics as a Function of
Frequency and Input Drive Level
(V
DS
= 6 V)
10
27 28 29 30 31 32
12
14
16
18
20
22
24
26
P
OUT
(dBm)
14
P
IN
10
8
6
4
12
Typical Performance Data
RF IN
RF OUT
6 V
.01 µF
.01 µF
50 pF
50 pF
50 pF
50 pF
6 V
Bias Arrangement
Detail A
V
DS
V
DS
RF IN
RF OUT
V
DS
V
DS
SEE
DETAIL A
Circuit Schematic
For biasing on, adjust VDSfrom zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.
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