ALPHA AA028N1-00 Datasheet
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 1/01A
24–30 GHz GaAs MMIC
Low Noise Amplifier
Features
■ Single Bias Supply Operation (4.5 V)
■ 3.0 dB Typical Noise Figure at 28 GHz
■ 17 dB Typical Small Signal Gain
■ 0.25 µm Ti/Pd/Au Gates
■ 100% On-Wafer RF, DC and Noise
Figure Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA028N1-00
Description
Alpha’s three-stage reactively-matched 24–30 GHz
MMIC low noise amplifier has typical small signal gain of
17 dB with a typical noise figure of 3.0 dB at 28 GHz.
The chip uses Alpha’s prov en 0.25 µm lo w noise PHEMT
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process.
Parameter Condition Symbol Min. Typ.
3
Max. Unit
Drain Current I
DS
24 50 mA
Small Signal Gain F = 24–30 GHz G 15 17 dB
Noise Figure F = 28 GHz NF 3.0 3.5 dB
Input Return Loss F = 24–30 GHz RL
I
-11 -6 dB
Output Return Loss F = 24–30 GHz RL
O
-14 -10 dB
Output Power at 1 dB Gain Compression
1
F = 28 GHz P
1 dB
7 dBm
Thermal Resistance
2
Θ
JC
92 °C/W
Electrical Specifications at 25°C (VDS= 4.5 V)
0.000
0.000
0.530
0.087
0.235
1.056
2.355
2.268
1.957
0.124
1.250
1.084
1.605
1.829
2.091
2.245
1.162
1.172
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic Value
Operating Temperature (TC) -55°C to +90°C
Storage Temperature (TST) -65°C to +150°C
Bias Voltage (VD)6 V
DC
Power In (PIN) 10 dBm
Junction Temperature (TJ) 175°C
Absolute Maximum Ratings
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3.Typical represents the median parameter value across the specified
frequency range for the median chip.
24–30 GHz GaAs MMIC Low Noise Amplifier AA028N1-00
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 1/01A
20 24 28 32
Frequency (GHz)
Typical Small Signal Performance
S-Parameters (V
D
= 4.5 V)
(dB)
20
10
0
-10
-20
-30
-40
-50
S
21
S
11
S
22
S
12
Typical Gain and Noise Figure
Performance for Three Bias Conditions
Frequency (GHz)
Noise Figure (dB)
20 22 24 26 28 30 32
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
21
NF 4.5 V
NF 2.5 V
NF* 2.5 V 5.0 V
Gain 4.5 V
Gain 2.5 V
Gain* 2.5 V 5.0 V
Gain (dB)
Typical Gain and Noise Figure
Performance vs. Drain Bias (V
D1
= VD2)
VD1 and VD2 (V)
2
4
6
8
10
12
14
16
18
20
1.0 2.0 3.0 4.0 5.0 6.0
28 GHz Gain (dB) and
28 GHz Noise Figure (dB)
16
19
22
25
28
31
34
37
40
43
Drain Current (mA)
Gain
NF
I
D
Typical Performance Data
V
D2
RF IN RF OUT
.01 µF 50 pF
.01 µF 50 pF
V
D1
Bias Arrangement
D
G
Detail A
RF IN RF OUT
G
D
G
D
G
D
V
D2
V
D1
SEE
DETAIL
A
Circuit Schematic
For biasing on, adjust VDSfrom zero to the desired value
(4.5 V recommended).For biasing off, reverse the biasing on procedure.
*Special Bias:V
D1
= 2.5 V, VD2= 5.0 V
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