ALPHA AA026P2-00 Datasheet

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com 1

Specifications subject to change without notice. 12/99A

23.5–26.5 GHz GaAs MMIC
Power Amplifier

Features

■ Single Bias Supply Operation (6 V)

■ 17 dB Typical Small Signal Gain

■ 24 dBm Typical P

1 dB

Output Power

at 26.5 GHz

■ 100% On-Wafer RF and DC Testing

■ 100% Visual Inspection to MIL-STD

MT 2010

Chip Outline

AA026P2-00

Description

Alpha’s three-stage balanced K band GaAs MMIC power
amplifier has a typical P

1 dB

of 24 dBm and a typical P

SAT

of 26 dBm at 26.5 GHz. The chip uses Alpha’s proven

0.25 µm MESFET technology, and is based upon MBE
layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate a conductive epoxy die attach
process. All chips are screened for small signal
S-parameters and power characteristics prior to shipment
for guaranteed performance. A broad range of
applications exist in both the commercial and military
areas where high power and gain are required.

Parameter Condition Symbol Min. Typ.

2

Max. Unit

Drain Current (at Saturation) I

DS

520 700 mA

Small Signal Gain F = 23.5–26.5 GHz G 15 17 dB

Input Return Loss F = 23.5–26.5 GHz RL

I

-17 -10 dB

Output Return Loss F = 23.5–26.5 GHz RL

O

-20 -10 dB

Output Power at 1 dB Gain Compression F = 26.5 GHz P

1 dB

23 24 dBm

Saturated Output Power F = 26.5 GHz P

SAT

24 26 dBm

Gain at Saturation F = 26.5 GHz G

SAT

14 dB

Thermal Resistance

1

Θ

JC

17 °C/W

Electrical Specifications at 25°C (VDS= 6 V)

0.000

0.000

0.605

1.271

2.510

0.130

3.230

1.014

2.068

3.080

2.960

Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.

Characteristic Value

Operating Temperature (TC) -55°C to +90°C

Storage Temperature (TST) -65°C to +150°C

Bias Voltage (VD)7 V

DC

Power In (PIN) 22 dBm

Junction Temperature (TJ) 175°C

Absolute Maximum Ratings

1. Calculated value based on measurement of discrete FET.

2. Typical represents the median parameter value across the specified
frequency range for the median chip.

23.5–26.5 GHz GaAs MMIC Power Amplifier AA026P2-00

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com

Specifications subject to change without notice. 12/99A

S

21

S

11

S

22

20

10

0

-10

-20

-30

-40

-50

Frequency (GHz)

Typical Small Signal Performance

S-Parameters (VDS = 6 V)

(dB)

20 21 22 23 24 25 26 27 28 29 30

30

25

20

15

10

5

0

-10 -7 -4 -1 2 5 8 11

PIN (dBm)

Output Characteristics as a

Function of Input Drive Level

(F = 26.5 GHz, VDS = 6 V)

P

OUT

(dBm)

Typical Performance Data

6 V

RF IN

RF OUT

6 V

.01 µF 50 pF

.01 µF

50 pF

Bias Arrangement

Detail A

RF IN

RF OUT

V

DS

V

DS

SEE

DETAIL A

Circuit Schematic

For biasing on, adjust VDSfrom zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.