ALPHA AA022P2-00 Datasheet

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com 1

Specifications subject to change without notice. 12/99A

21–23 GHz GaAs MMIC
Medium Power Amplifier

Features

■ Single Bias Supply Operation (6 V)

■ 22 dBm Typical P

1 dB

Output Power

at 23 GHz

■ 14 dB Typical Small Signal Gain

■ 0.25 µm Ti/Pd/Au Gates

■ 100% On-Wafer RF and DC Testing

■ 100% Visual Inspection to MIL-STD-883

MT 2010

Chip Outline

AA022P2-00

Description

Alpha’s two-stage balanced K band GaAs MMIC power
amplifier has a typical P

1 dB

of 22 dBm with 13 dB
associated gain guaranteed across frequency range
21–23 GHz. The chip uses Alpha’s proven 0.25 µm
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for small signal S-parameters and power
characteristics prior to shipment for guaranteed
performance.

Parameter Condition Symbol Min. Typ.

2

Max. Unit

Drain Current (at Saturation) I

DS

280 300 mA

Small Signal Gain F = 21–23 GHz G 12 14 dB

Input Return Loss F = 21–23 GHz RL

I

-8 -6 dB

Output Return Loss F = 21–23 GHz RL

O

-9 -7 dB

Output Power at 1 dB Gain Compression F = 23 GHz P

1 dB

19 22 dBm

Saturated Output Power F = 23 GHz P

SAT

21 23.5 dBm

Gain at Saturation F = 23 GHz G

SAT

11 dB

Thermal Resistance

1

Θ

JC

69 °C/W

Electrical Specifications at 25°C (VDS= 6 V)

1. Calculated value based on measurement of discrete FET.

2. Typical represents the median parameter value across the specified

frequency range for the median chip.

0.571

3.268

1.576

3.400

0.000

1.572

1.700

0.850

0.000

RF OUT

RF IN

Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.

Characteristic Value

Operating Temperature (TC) -55°C to +90°C

Storage Temperature (TST) -65°C to +150°C

Bias Voltage (VD)7 V

DC

Power In (PIN) 19 dBm

Junction Temperature (TJ) 175°C

Absolute Maximum Ratings

21–23 GHz GaAs MMIC Medium Power Amplifier AA022P2-00

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com

Specifications subject to change without notice. 12/99A

20

0

-10

-20

10

5

-5

-15

15

1918 20 21

S

21

Typical Small Signal Performance

S-Parameters (V

DS

= 6 V IDS = 240 mA,

T

A

= 25˚C)

22

Frequency (GHz)

(dB)

23 24 25 26

S

11

S

22

Typical Performance Data

RF OUTRF IN

6 V

.01 µF

50 pF

Bias Arrangement

Detail A

RF IN

RF OUT

V

DS

V

DS

See

Detail A

Circuit Schematic

For biasing on, adjust VDSfrom zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.