ALPHA AA022P1-00 Datasheet
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 12/99A
18–23 GHz GaAs MMIC
Power Amplifier
Features
■ Single Bias Supply Operation (6 V)
■ 14 dB Typical Small Signal Gain
■ 24.5 dBm Typical P
1 dB
Output Power
at 23 GHz
■ 0.25 µm Ti/Pd/Au Gates
■ 100% On-Wafer RF and DC Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA022P1-00
Description
Alpha’s two-stage balanced K band GaAs MMIC power
amplifier has a typical P
1 dB
of 24.5 dBm with 13 dB
associated gain and 11% power added efficiency at
23 GHz. The chip uses Alpha’s proven 0.25 µm MESFET
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for small signal S-parameters and power
characteristics prior to shipment for guaranteed
performance. A broad range of applications exist in both
the high reliability and commercial areas where high power
and gain are required.
Parameter Condition Symbol Min. Typ.
2
Max. Unit
Drain Current (at Saturation) I
DS
300 390 mA
Small Signal Gain F = 18–23 GHz G 12 14 dB
Input Return Loss F = 18–23 GHz RL
I
-15 -10 dB
Output Return Loss F = 18–23 GHz RL
O
-17 -10 dB
Output Power at 1 dB Gain Compression F = 23 GHz P
1 dB
22 24.5 dBm
Saturated Output Power F = 23 GHz P
SAT
24 25.5 dBm
Gain at Saturation F = 23 GHz G
SAT
13 dB
Thermal Resistance
1
Θ
JC
39 °C/W
Electrical Specifications at 25°C (VDS= 6 V)
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
0.000
0.000
0.520
0.086
1.700
2.784
0.329
3.400
1.613
1.371
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic Value
Operating Temperature (TC) -55°C to +90°C
Storage Temperature (TST) -65°C to +150°C
Bias Voltage (VD)7 V
DC
Power In (PIN) 22 dBm
Junction Temperature (TJ) 175°C
Absolute Maximum Ratings
18–23 GHz GaAs MMIC Power Amplifier AA022P1-00
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 12/99A
-40
-30
-20
-10
0
10
20
18
26242220
S
11
S
12
S
21
S
22
Frequency (GHz)
(dB)
Typical Small Signal Performance
S-Parameters (VDS = 6 V)
16
17
18
19
20
21
22
23
24
25
26
18 21 22 23 24 25
Frequency (GHz)
P
OUT
(dBm)
Output Characteristics as a Function of
Frequency and Input Drive Level
(VDS = 6 V)
8
10
12
14
16
P
IN
Typical Performance Data
RF IN
6 V
6 V
.01 µF
.01 µF
50 pF50 pF
50 pF50 pF
RF OUT
Bias Arrangement
Detail A
V
DS
V
DS
RF IN
RF OUT
V
DS
V
DS
SEE
DETAIL A
Circuit Schematic
For biasing on, adjust VDSfrom zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.
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