Alliance Semiconductor AS7C513, AS7C3513 Service Manual

查询AS7C3513-12供应商

March 2001

Features

• AS7C513 (5V version)

• AS7C3513 (3.3V version)

• Industrial and commercial temperature

• Organization: 32,768 words × 16 bits

• Center power and ground pins

•High speed

- 12/15/20 ns address access time

- 6,7,8 ns output enable access time

• Low power consumption: ACTIVE

- 800 mW (AS7C513) / max @ 12 ns

- 432 mW (AS7C3513) / max @ 12 ns

®

5V/3.3V 32K×16 CMOS SRAM

• Low power consumption: STANDBY

- 28 mW (AS7C513) / max CMOS

- 18 mW (AS7C3513) / max CMOS

• 2.0V data retention

• Easy memory expansion with CE

• TTL-compatible, three-state I/O

• 44-pin JEDEC standard package

-400 mil SOJ

-400 mil TSOP II

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA

AS7C513

AS7C3513

, OE inputs

Logic block diagram

A0

A1

A2

A3

A4

A5

A6

A7

I/O0–I/O7

I/O8–I/O15

WE

UB

OE

LB

CE

Row decoder

I/O

buffer

32K × 16

Array

Control circuit

Column decoder

A8

A9

A10

A11

A12

A13

A14

V

CC

GND

Pin arrangement

44-Pin SOJ, TSOP II (400 mil)

1NC

44

A4

43

A5

42

A6

41

OE
UB

40

LB

39

I/O15

38

I/O14

37

I/O13

36

I/O12

35

GND

34

V

33

CC

I/O11

32

I/O10

31

I/O9

30

I/O8

29

NC

28

A7

27

A8

26

A9

25

A10

24

NC

23

I/O0
I/O1
I/O2
I/O3

V
GND
I/O4
I/O5
I/O6
I/O7

WE

A14
A13
A12
A11

2A3
3A2
4A1
5

A0

6

CE

7
8
9
10
11

CC

12
13

AS7C513

AS7C3513

14
15
16
17
18
19
20
21
22

NC

Selection guide

AS7C513-12

AS7C3513-12

Maximum address access time 12 15 20 ns

Maximum output enable access time 5 7 9 ns

AS7C513 160 150 140 mA

Maximum operating current

AS7C3513 120 110 100 mA

AS7C513 5 5 5 mA

Maximum CMOS standby current

AS7C3513 5 5 5 mA

Shaded areas indicate advance information.

AS7C513-15

AS7C3513-15

AS7C513-20

AS7C3513-20 Unit

3/23/01; v.1.0

Alliance Semiconductor

P. 1 of 10

Copyright © Alliance Semiconductor. All rights reserved.

AS7C513

AS7C3513

®

Functional description

The AS7C513 and the AS7C3513 are high performance CMOS 524,288-bit Static Random Access Memory (SRAM) devices organized as
32,768 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address access and cycle times (tAA, tRC, tWC) of 12/15/20 ns with output enable access times (tOE) of 6,7,8 ns are ideal for high
performance applications. The chip enable input CE

When CE
consumption in CMOS standby mode. The devices also offer 2.0V data retention.

A write cycle is accomplished by asserting write enable (WE), (UB) and/or (LB), and chip enable (CE). Data on the input pins I/O0-I/O7,
and/or I/O8–I/O15, is written on the rising edge of WE
should drive I/O pins only after outputs have been disabled with output enable (OE

A read cycle is accomplished by asserting output enable (OE
drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is
active, or (UB) and (LB), output drivers stay in high-impedance mode.

The devices provide multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and
read. LB controls the lower bits, I/O0–I/O7, and UB controls the higher bits, I/O8–I/O15.

All chip inputs and outputs are TTL-compatible. The AS7C513 and AS7C3513 are packaged in common industry standard packages.

is high, the devices enter standby mode. The AS7C513 and AS7C3513 are guaranteed not to exceed 28/18 mW power

permits easy memory expansion with multiple-bank memory systems.

(write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices

) or write enable (WE).

), (UB) and (LB), and chip enable (CE), with write enable (WE) high. The chips

Absolute maximum ratings

Parameter Device Symbol Min Max Unit

Vo l t ag e o n V

relative to GND

CC

AS7C3513 V

Voltage on any pin relative to GND V

Power dissipation P

Storage temperature (plastic) T

AS7C513 V

Ambient temperature with V

applied T

CC

DC current into outputs (low) I

NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.

t1

t1

t2

D

stg

bias

OUT

–0.50 +7.0 V

–0.50 +5.0 V

–0.50 VCC +0.50 V

–1.0W

–65 +150

–55 +125

o

C

o

C

–50mA

Truth table

CE

H X X X X High Z High Z Standby (I

LHLLHD

LHLHLHigh ZD

LHLLLD

LLXLLD

LLXLHD

LLXHLHigh ZD

L
L

Key: X = Don’t care; L = Low; H = High

3/23/01; v. 1.0

WE OE LB UB I/O0–I/O7 I/O8–I/O15 Mode

OUT

OUT

IN

IN

H
X

H
X

X
H

X
H

High Z High Z Output disable (I

High Z Read I/O0–I/O7 (ICC)

Read I/O8–I/O15 (ICC)

Read I/O0–I/O15 (ICC)

Write I/O0–I/O15 (ICC)

D

D

OUT

OUT

IN

High Z Write I/O0–I/O7 (ICC)

IN

Write I/O8–I/O15 (ICC)

Alliance Semiconductor

, I

)

SB

SBI

)

CC

P. 2 of 10

AS7C513

AS7C3513

®

Recommended operating conditions

Parameter Device Symbol Min Typical Max Unit

Supply voltage

Input voltage

commercial T

Ambient operating temperature

industrial T

†

VIL min = –3.0V for pulse width less than tRC/2.

AS7C513 V

AS7C3513 V

AS7C513 V

AS7C3513 V

CC

CC

IH

IH

V

IL

A

A

4.5 5.0 5.5 V

3.0 3.3 3.6 V

2.2 – VCC + 0.5 V

2.0 – VCC + 0.5

–0.5†–0.8V

0– 70 ° C

–40 – 05 ° C

DC operating characteristics (over the operating range)1

-12 -15 -20

Parameter Symbol Test conditions Device

Input leakage current | I

Output leakage current | I

Operating power supply
current

|

LI

|

LO

I

CC

I

SB

Standby power supply
current

I

SB1

V

Output voltage

Shaded areas indicate advance information.

OL

V

OH

V

= Max

CC

V

= GND to V

IN

V

= Max

CC

V

= GND to V

OUT

V

= Max, CE ≤ V

CC

f = f

V
f = f

V
V
V

, I

Max

OUT

= Max, CE ≤ V

CC

, I

Max

OUT

= Max, CE ≥ V

CC

≤ GND + 0.2V or

IN

≥ V

IN

–0.2V, f = 0

CC

CC

CC

IL

= 0mA

IL

= 0mA

CC

–0.2V

AS7C513 – 160 – 150 – 140

AS7C3513 – 120 – 110 – 100

AS7C513 – 40 – 40 – 40

AS7C3513 – 40 – 40 – 40

AS7C513 – 3 – 3 – 3

AS7C3513–3–3–3

–1–1–1µA

–1–1–1µA

IOL = 8 mA, VCC = Min – 0.4 – 0.4 – 0.4 V

IOH = –4 mA, VCC = Min 2.4–2.4–2.4– V

UnitMin Max Min Max Min Max

mA

mA

mA

Capacitance (f = 1MHz, Ta = 25o C, VCC = NOMINAL)

2

Parameter Symbol Signals Test conditions Max Unit

Input capacitance C

I/O capacitance C

3/23/01; v. 1.0

IN

I/O

A, CE, WE, OE, LB, UB

I/O Vin = V

Alliance Semiconductor

Vin = 0V 5 pF

= 0V 7 pF

out

P. 3 of 10