The AS7C3256A is a 3.3V high-performance CMOS 262,144-bit Static Random-Access Memory (SRAM) device
organized as 32,768 words × 8 bits. It is designed for memory applications requiring fast data access at low voltage,
including Pentium
permit 3.3V operation without sacrificing performance or operating margins.
The device enters standby mode when
power reduction after initial access, resulting in significant power savings during CPU idle, suspend, and stretch mode.
Equal address access and cycle times (t
are ideal for high-performance applications. The chip enable (
memory organizations.
A write cycle is accomplished by asserting chip enable (
is written on the rising edge of
drive I/O pins only after outputs have been disabled with output enable (
A read cycle is accomplished by asserting chip enable (
chip drives I/O pins with the data word referenced by the input address. When chip enable or output enable is high, or write
enable is low, output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible. Operation is from a single 3.3 ±0.3V supply. The AS7C3256A is packaged
in high volume industry standard packages.
TM
, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques
CE
is high. CMOS standby mode consumes 7.2 mW. Normal operation offers 75%
, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5, 6, 7, 8 ns
AA
WE
(write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should
CE
) input permits easy memory expansion with multiple-bank
CE
) and write enable (WE) LOW. Data on the input pins I/O0-I/O7
OE
) or write enable (WE).
CE
) and output enable (OE) LOW, with write enable (WE) high. The
Absolute maximum ratings
ParameterSymbolMinMaxUnit
Voltage on V
Voltage on any pin relative to GNDV
Power dissipationP
Storage temperature (plastic)T
Ambient temperature with V
DC current into outputs (low)I
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
relative to GNDV
CC
appliedT
CC
t1
t2
D
stg
bias
OUT
–0.5+5.0V
–0.5VCC + 0.5V
–1.0W
–65+150
–55+125
o
C
o
C
–20mA
Truth table
CEWEOE
HXXHigh ZStandby (I
LHHHigh ZOutput disable (I
LHLD
LLXD
Key: X = Don’t care, L = Low, H = High
OUT
IN
DataMode
, I
SB
SB1
Read (ICC)
Write (ICC)
CC
)
)
4/23/04; v.2.0 Alliance SemiconductorP. 2 of 9
Page 3
®
Recommended operating conditions
ParameterSymbolMinTypicalMaxUnit
Supply voltageV
Input voltage
Ambient operating temperature
*
V
min = –1.0V for pulse width less than 5ns.
IL
**
max = VCC + 2.0V for pulse width less than 5ns.
V
IH
commercialT
industrialT
CC
**
V
IH
*
V
IL
A
A
DC operating characteristics (over the operating range)1
1During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2This parameter is sampled, but not 100% tested.
3For test conditions, see AC Test Conditions, Figures A, B.
4These parameters are specified with CL = 5pF, as i n Figur e s B. Transition is measured
5This parameter is guaranteed, but not tested.
WE
is High for read cycle.
6
7
CE
and OE are Low for read cycle.
8Address valid prior to or coincident with
9All read cycle timings are referenced from the last valid address to the first transitioning address.
10 N/A
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 N/A
13 C=30pF, except on High Z and Low Z parameters, where C=5pF.