Alliance MEMORY AS6C8008 Service Manual
January 2007
JANUARY 2008
JANUARY/2008, V 1.0
Alliance Memory Inc.
Page 1 of 11
AS6C8008
1024K X 8 BIT SUPER LOW POWER CMOS SRAM
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 30/20mA (TYP.)
Standby current : 6µA (TYP.) LL-version
Single 2.7V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
Lead free and green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
AS6C8008(I)
Operating
Temperature
~ 85℃
-40
Range Speed
Vcc
2.7
~ 5.5V 55ns 6µA(LL) 30/20mA
512K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The AS6C8008 is a 8,388,608-bit low power
CMOS static random access memory organized as
1,048,5
high
Its standby current is stable within the range of
operating
The AS6C8008
power
suited
appl
The AS6C8008 operates from a single power
supply of 2.7V ~ 5.5V and all inputs and outputs are
fully
76 words by 8 bits. It is fabricated using very
performance, high reliability CMOS technology.
temperature.
is well designed for very low
system applications, and particularly well
for battery back-up nonvolatile memory
ication.
TTL compatible
Power Dissipation
Standby(I
SB1,TYP.) Operating(Icc,TYP.)
FUNCTIONAL BLOCK DIAGRAM
Vc
c
Vs
s
A0-A19
DQ0-DQ
CE#
CE2
WE
#
#
OE
DECODER
7
I/O DATA
CIRCUIT
CONTROL
CIRCUIT
1024Kx8
MEMORY
COLUMN I/O
ARRAY
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0 - A19 Address Inputs
DQ0 – DQ7 Data Inputs/Outputs
CE#, CE2 Chip Enable Inputs
WE# Write Enable Input
OE# Output Enable Input
VCC Power Supply
VSS Ground
NC No Connection
January 2007
JANUARY 2008
JANUARY/2008, V 1.0
Alliance Memory Inc.
Page 2 of 11
AS6C8008
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE #
NC
DQ
DQ 1
Vcc
Vss
DQ
DQ
NC
NC
WE #
A19
A18
A17
A16
A15
0
2
3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22 23
1024K X 8 BIT SUPER LOW POWER CMOS SRAM
A
C6S
08
0
8
TS OP -II
512K X 8 BIT LOW POWER CMOS SRAM
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
A5
A6
A7
OE
CE 2
A8
NCNC
NC
DQ
DQ
Vss
Vcc
DQ
DQ
NC
NC
A9
A1
A1
A1
A1
A1
#
7
6
5
4
0
1
2
3
4
A
B
DQ
C
D
E
DQ
F
G
H
NC
NC
Vss
Vcc
NC
A18
1 2 3 4 5 6
A0
A3
A4NC
NC
0
DQ
DQ
NC NC
3
A8 A19
1
2
A17 A7
NC
A16
A14
A15
A12
A13
A10A9 A11
TFBGA
A6A5
A2OE# A1
CE
NC
DQ5
DQ6
WE
#
#
CE2
NC
DQ
Vcc
Vss
DQ7
NCNC
4
January 2007
JANUARY 2008
JANUARY/2008, V 1.0
Alliance Memory Inc.
Page 3 of 11
AS6C8008
1024K X 8 BIT SUPER LOW POWER CMOS SRAM
512K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATING UNIT
Voltage on VCC relative to VSS VT1 -0.5 to 6.5 V
Voltage on any other pin relative to VSS VT2 -0.5 to VCC+0.5 V
Operating Temperature TA
-40 to 85(I grade)
Storage Temperature TSTG -65 to 150
℃
℃
Power Dissipation PD 1 W
DC Output Current IOUT 50 mA
Soldering Temperature (under 10 sec) TSOLDER 260
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
ting only and functional operation of the device or any other conditions above those indicated in the operational sections of this
ra
specifica
tion is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
℃
TRUTH TABLE
MODE
Standby
CE#
H X X X
X L X X
Output Disable
Read
Write
Note: H = VIH, L = VIL, X = Don't care.
L H H H
L H L H
L H X L
CE2 OE# WE#
OPERATION
I/O
Hig
h-Z I
Hig
h-Z I
h-Z ICC,I
Hig
D
OUT
DIN ICC,I
ICC,I
SUPP
LY CURRENT
SB1
SB1
CC1
CC1
CC1
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage VCC 2.7 3.0 5.5 V
Input High Voltage V
Input Low Voltage V
Input Leakage Current ILI V
Output Leakage
rrent
Cu
SYMBOL TEST CONDITION MIN. TYP.
*1
2.4 - VCC+0.3 V
IH
*2
- 0.2 - 0.6 V
IL
≧
CC
V
I
LO
CC
Output Disabled
VIN V
≧
≧
V
OUT
≧
V
SS
SS
- 1 - 1
- 1 - 1
Output High Voltage VOH IOH = -1mA 2.4 2.7 - V
Output Low Voltage VOL IOL = 2mA - - 0.4 V
Cycle time = Min.
= V
Average Operating
er supply Current
Pow
Standby Power
Supply
Current
I
I
CC1
I
SB1
CE#
CC
I
= 0mA
I/O
Other
Cycle time = 1µs
CE#
I
= 0mA
I/O
Other
CE# VCC-0.2V
or CE2
Other
and CE2 = V
IL
pins at VIL or V
≦
0.2V and CE2
IH
IH
≧
VCC-0.2V
pins at 0.2V or VCC-0.2V
≧
≦
2V
0.
pins at 0.2V or VCC-0.2V
- 55 -
- - 4 mA
- 6 80
*4
MAX. UNIT
30 60
µ
µ
mA
µ
A
A
A
January 2007
JANUARY 2008
JANUARY/2008, V 1.0
Alliance Memory Inc.
Page 4 of 11
AS6C8008
1024K X 8 BIT SUPER LOW POWER CMOS SRAM
Notes:
1.
VIH(max) = V
(min) = V
V
2.
IL
Undershoot specifications are characterized, not 100% tested.
3. Over/
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CAPACITANCE (TA = 25 , f = 1.0MHz)
+ 3.0V for pulse width less than 10ns.
CC
- 3.0V for pulse width less than 10ns.
SS
= VCC(TYP.) and TA= 25
CC
?
512K X 8 BIT LOW POWER CMOS SRAM
℃
PARAMETER SYMBOL MIN. MAX UNIT
Input Capacitance C
Input/Output Capacitance C
Note : These parameters are guaranteed by device characterization, but not production tested.
I/O
IN
-
-
6 pF
8 pF
AC TEST CONDITIONS
Input Pulse Levels 0.2V to VCC- 0.2V
Input Rise and Fall Times 3ns
Input and Output Timing Reference Levels 1.5V
Output Load CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time t
Address Access Time t
Chip Enable Access Time t
Output Enable Access Time t
Chip Enable to Output in Low-Z t
Output Enable to Output in Low-Z t
Chip Disable to Output in High-Z t
Output Disable to Output in High-Z t
Output Hold from Address Change t
SYM
RC
AA
ACE
OE
CLZ
OLZ
CHZ
OHZ
OH
.
AS6C800
8
(2) WRITE CYCLE
PARAMETER
Write Cycle Time t
Address Valid to End of Write t
Chip Enable to End of Write t
Address Set-up Time t
Write Pulse Width t
Write Recovery Time t
Data to Write Time Overlap t
Data Hold from End of Write Time t
Output Active from End of Write t
Write to Output in High-Z t
*These parameters are guaranteed by device characterization, but not production tested.
SYM
WC
AW
CW
AS
WP
WR
DW
DH
OW
WHZ
.
AS6C800
8
UNIT
UNIT
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