Allegro UCQ5818EPF, UCQ5818AF Datasheet

26182.29A
5818-F
BiMOS II 32-BIT SERIAL-INPUT, LATCHED
Data Sheet
SOURCE DRIVERS FOR -40
UCQ5818EPF
30
32
31
OUT
OUT
OUT
OUT
OUT
OUT
NC
6
5
4
7
29
8
9
10
11
12
13
14
15
16
17
19
LATCHES
REGISTER
20
18
19
17
18
NC
OUT
OUT
3
2
BLNK
21
22
GROUND
BLANKING
LOAD
DATA OUT
1
BB
V
CLK
23
CLOCK
SUPPLY
ABSOLUTE MAXIMUM RATINGS
at TA = 25°C
Logic Supply Voltage, VDD.................... 15 V
Driver Supply Voltage, V Continuous Output Current,
I
......................... -40 mA to +15 mA
OUT
Input Voltage Range,
VIN....................... -0.3 V to V
Package Power Dissipation, P
(UCQ5818AF) ............................ 3.5 W*
(UCQ5818EPF) ......................... 2.7 W†
Operating Temperature Range,
T
................................. -40°C to +85°C
A
Storage Temperature Range,
T
............................... -55°C to +150°C
S
* Derate at rate of 28 mW/°C above TA = +25°C † Derate at rate of 22 mW/°C above TA = +25°C
Caution: CMOS devices have input static protection but are susceptible to damage when exposed to extremely high static electrical charges.
BB
1
3
2
OUT
OUT
OUT
DATA IN
LOGIC
SUPPLY
43
44
DD
V
ST
24
STROBE
OUT
25
16
42
REGISTER
OUT
26
15
OUT
41
2
LATCHES
8
27
14
OUT
40
28
NC
................... 60 V
+ 0.3 V
DD
D
OUT
39
38
37
36
35
34
33
19
32
31
OUT
30
NC
29
Dwg. PP-059-2
°
C TO +85°C OPERATION
Designed primarily for use with vacuum-fluorescent displays, the UCQ5818AF and UCQ5818EPF smart power BiMOS II drivers combine CMOS shift registers, data latches, and control circuitry, with bipolar high­speed sourcing outputs and DMOS active pull-down circuitry. The high­speed shift register and data latches allow direct interfacing with microproces­sor LSI-based systems. A CMOS serial data output enables cascade connec-
4
tions in applications requiring additional drive lines. Both devices feature 60 V and -40 mA output ratings, allowing them to be used in many other peripheral power driver applications.
These smart power drivers have been designed with BiMOS II logic for improved data entry rates. With a 5 V supply, they will operate to at least
3.3 MHz. At 12 V, higher speeds are possible. Use of these devices with TTL may require the use of appropriate pull-up resistors to ensure an input logic high. All devices can be operated over the ambient temperature range of
13
-40°C to +85°C. The UCQ5818AF is supplied in a 40-pin plastic dual in-line package with 0.600" (15.24 mm) row spacing. A copper lead frame, reduced supply current requirement, and low output saturation voltage permits operation with minimum junction temperature rise. The ‘A’ package allows all 32 outputs to be operated at -25 mA continuously over the operating temperature range.
For high-density packaging applications, the UCQ5818EPF is furnished in a 44-lead plastic chip carrier (quad pack) for surface mounting on solder lands with 0.050" (1.27 mm) centers. The PLCC allows -25 mA continuous operation of all outputs simultaneously at ambient temperatures to 60°C. Similar devices are available as the UCQ5810AF/LWF (10 bits), UCQ5811A (12 bits), and UCQ5812AF/EPF (20 bits).
FEATURES
60 V Source Outputs
High-Speed Source Drivers
To 3.3 MHz Data Input Rate
Low-Output Saturation Voltages
Active DMOS Pull-Downs
Always order by complete part number, e.g., UCQ5818EPF .
Low-Power CMOS Logic and Latches
Reduced Supply Current Requirements
Improved Replacements for SN75518N/FN
5818-F
Dwg. FP-013-1
SERIAL DATA OUT
32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS FOR -40°C TO +85°C OPERATION
UCQ5818AF
LOAD
SUPPLY
SERIAL
DATA OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
BLANKING
GROUND
1
V
BB
2
338
32
4
31
5
30
6
29
7
28
8
27
9
26
10
25
LATCHES
11
24
12
23
13
22
14
21
15
20
16
19
17
18
18
17
19
BLNK
20
REGISTER
LATCHES
REGISTER
V
CLK
LOGIC
40
DD
SUPPLY
SERIAL
39
DATA IN
OUT
1
37
OUT
2
OUT
36
3
OUT
35
4
OUT
34
5
33
OUT
6
32
OUT
7
31
OUT
8
30
OUT
9
29
OUT
10
28
OUT
11
27
OUT
12
26
OUT
13
25
OUT
14
24
OUT
15
23
OUT
16
22
STROBE
ST
21
CLOCK
CLOCK
SERIAL
DATA IN
STROBE
BLANKING
GROUND
FUNCTIONAL BLOCK DIAGRAM
SERIAL-PARALLEL SHIFT REGISTER
LATCHES
OUT1OUT
OUT
2
3
OUT
N
TYPICAL INPUT CIRCUIT
V
DD
IN
V
DD
MOS
BIPOLAR
V
BB
LOGIC SUPPLY
LOAD SUPPLY
Dwg. PP-029-4
3.0
2.5
SUFFIX 'A', R = 36°C/W
θJA
2.0
1.5
SUFFIX 'EP', R = 46°C/W
θJA
1.0
0.5
ALLOWABLE PACKAGE POWER DISSIPATION IN WATTS
0
25
50 75 100 125 150
AMBIENT TEMPERATURE IN °C
Dwg. GP-025A
Dwg. GP-025A
Dwg. EP-010-5
TYPICAL OUTPUT DRIVER
V
BB
OUT
N
Dwg. No. A-14,219
115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000
Copyright © 1988, 2000 Allegro MicroSystems, Inc.
5818-F
32-BIT SERIAL-INPUT,
LATCHED SOURCE DRIVERS
FOR -40°C TO +85°C OPERATION
ELECTRICAL CHARACTERISTICS over operating temperature range, VBB = 60 V unless other­wise noted.
Limits @ VDD = 5 V Limits @ VDD = 12 V
Characteristic Symbol Test Conditions Mln. Typ. Max. Min. Typ. Max. Units
V
Output Leakage Current I
Output Voltage V
Output Pull-Down Current I
Input Voltage V
Input Current I
Serial Data Output Voltage V
Maximum Clock Frequency f
Supply Current I
Blanking to Output Delay t
Output Fall Time t
Output Rise Time t
CEX
OUT(1)IOUT
V
OUT(0)IOUT
OUT(0)
IN(1)
V
IN(0)
IN(1)
I
IN(0)
OUT(1)IOUT
V
OUT(0)IOUT
clk
DD(1)
I
DD(0)
I
BB(1)
I
BB(0)
PHL
t
PLH
f
r
= 0 V, TA = +70°C -5.0 -15 -5.0 -15 µA
OUT
= -25 mA 58 58.5 58 58.5 V
= 1 mA 2.0 3.0 ——— V
= 2 mA ——— —2.0 3.5 V
I
OUT
V
= 5 V to V
OUT
= 20 V to V
V
OUT
VIN = V
DD
VIN = 0.8 V -0.05 -0.5 -0.1 -1.0 µA
= -200 µA 4.5 4.7 11.7 11.8 V
= 200 µA 200 250 100 200 mV
All Outputs High 100 300 200 500 µA
All Outputs Low 100 300 200 500 µA
Outputs High, No Load 3.0 6.0 3.0 6.0 mA
Outputs Low 10 100 10 100 µA
CL = 30 pF, 50% to 50% 2000 ——1000 ns
CL = 30 pF, 50% to 50% 1000 ——850 ns
CL = 30 pF, 90% to 10% 1450 ——650 ns
CL = 30 pF, 10% to 90% 650 ——700 ns
BB
BB
2.0 3.5 — ——— mA
——— 8.0 13 mA
3.5 5.3 10.5 12.3 V
-0.3 +0.8 -0.3 +0.8 V
0.05 0.5 0.1 1.0 µA
3.3* —— ——— MHz
Negative current is defined as coming out of (sourcing) the specified device pin. * Operation at a clock frequency greater than the specified minimum value is possible but not warranteed.
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