Allegro s6411 Service Manual

STR-S6411 and STR-S6411F

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OFF-LINE SWITCHING REGULATORS

STR-S6411 AND
STR-S6411F

OFF-LINE SWITCHING REGULATORS

– WITH POWER MOSFET OUTPUT

These devices are specifically designed to meet the requirements

for increased integration and reliability in off-line flyback (STR-S6411)

DRAIN

SOURCE

GATE

POWER

GROUND

SOFT

START

OVER-CURRENT

PROTECTION

V

SIGNAL

GROUND

FDBK

REF.

PWM

OSC.

+

Dwg. PK-003

LATCH

+

IN

UVLO

and forward (STR-S6411F) converters operating in a fixed-frequency
PWM mode. Each device incorporates the primary control and drive
circuits with an avalanche-rated high-voltage power MOSFET. Crucial
system parameters such as switching frequency and maximum duty
cycle are fixed during manufacture. The STR-S6411 and STR-S6411F
differ only in their maximum duty cycle. Control circuit decoupling and
layout are optimized within each device.

Cycle-by-cycle and average-current limiting, soft start, under­voltage lockout with hysteresis, and thermal shutdown protect the
device during all normal and overload conditions. The performance and
reliability of these devices, and their variable-frequency counterparts,
has been proven in substantial volume production.

The requirements of high dielectric isolation and low transient
thermal impedance and steady-state thermal resistance are satisfied in
an over-molded, 9-pin single in-line power package.

Data Sheet

28101.1

ABSOLUTE MAXIMUM RATINGS

Supply Voltage, VIN............................ 35 V

Drain-Source Voltage, VDS............... 800 V

Drain Current, I

continuous ..................................... ±5 A

single pulse, tw ≤1 ms .................. ±20 A

Avalanche Energy, E

single pulse............................... 400 mJ

Gate-Source Voltage, VGS................ ±20 V

Gate-Drive Current Range,

IG................................. -0.7 A to +1.5 A

Over-Current Protection Voltage Range,

V

............................. -0.3 V to +4.0 V

OCP

Insulation RMS Voltage,

V

WM(RMS)

DISCONTINUED PRODUCT

Package Power Dissipation,

PD........................................ See Graph

FET Channel Temperature, TJ...... +150°C

Internal Frame Temperature, TF... +125°C
Operating Temperature Range,

TA............................... -20°C to +125°C

Storage Temperature Range,

T

............................. -30°C to +125°C

stg

D

A

..................................... 2000 V

— FOR REFERENCE ONLY

FEATURES

■ PWM Flyback Conversion or Forward Conversion

■ Output Power to 250 W

■ Pulse-by-Pulse Current Limiting

■ Fixed-Frequency 100 kHz PWM

■ Avalanche-Rated Power MOSFET Switch

■ Soft Start

■ Internal Under-Voltage Lockout and Thermal Shutdown

■ Low External Component Count

■ Over-Molded SIP with Isolated Heat Spreader

Always order by complete part number:
STR-S6411 or STR-S6411F .

TM

TM

A

MicroSystems, Inc.

STR-S6411 and STR-S6411F

OFF-LINE SWITCHING REGULATORS

FUNCTIONAL BLOCK DIAGRAM

V

UVLO

IN

7

FDBK

9

GATE

3

REF.

5

SOFT

START

R

toff

8

SIGNAL

GROUND

R

ton

PWM

+

OSC.

R

LATCH

S

Q

4

POWER

GROUND

+

0.2 V

DRAIN

1

SOURCE

2

OVER-CURRENT

6

PROTECTION

Dwg. FK-003

ALLOWABLE PACKAGE POWER DISSIPATION MAXIMUM SAFE OPERATING AREA

62 W

60

MOUNTING SURFACE
TEMPERATURE

100

RECOMMENDED MAX.

40

20

FREE AIR

3.2 W

ALLOWABLE PACKAGE POWER DISSIPATION in WATTS

0

20 60 100

A

FRAME TEMP. = +100°C

TEMPERATURE in °C

MicroSystems, Inc.

LIMITED BY FRAME
TEMP. = +125°C MAX.

TM

TM

30

LIMITED
BY r

DS(on)

NO HEAT SINK
NATURAL COOLING
T = +25°C

A

10 30 100 300

DRAIN-TO-SOURCE VOLTAGE in VOLTS

140

Dwg. GK-003

10

3.0

1.0

DRAIN CURRENT in AMPERES

0.3

0.1

3.0

115 Northeast Cutoff, Box 15036
W

Worcester, Massachusetts 01615-0036 [phone]
Copyright © 1994 Allegro MicroSystems, Inc.

t = 0.1 ms SINGLE PULSE

w

t = 1 ms SINGLE PULSE

w

t = 10 ms SINGLE PULSE

w

DS

LIMITED BY V max

1000

Dwg. GK-004-1

STR-S6411 and STR-S6411F

OFF-LINE SWITCHING REGULATORS

600

500

400

ALLOWABLE AVALANCHE ENERGY

300

200

100

ALLOWABLE AVALANCHE ENERGY in mJ

0

0 60 100

SINGLE PULSE
DRAIN CURRENT = 5 A
SUPPLY VOLTAGE = 50 V

20 40 80 120 160

STARTING CHANNEL TEMPERATURE in °C

140

Dwg. GK-009-1

ELECTRICAL CHARACTERISTICS at T

= +25°C, VIN = 17 V, voltage measurements are referenced to

A

Signal Ground (pin 8) (unless otherwise noted).

Limits

Characteristic Symbol Test Conditions Min. Typ. Max. Units

On-State Voltage V
Under-Voltage Lockout V
FET Leakage Current I
FET ON Resistance r

DS(on)

Forward Transconductance g
FET Input Capacitance C
Propagation Delay Time t

Oscillator Frequency f
Maximum ON Time t

INT
INQ

DSS

fs

iss

phl

t

plh

osc

on

Turn-on, increasing V
Turn-off, decreasing V

IN

IN

14.4 16 17.6 V

8.4 9.4 10.4 V
VDS = 800 V – – 1.2 mA
VGS = 10 V, ID = 3 A – 1.8 2.2 Ω
VGS = 10 V, ID = 3 A 3.0 – – S
VDS=10 V, VGS=0 V, f=1 MHz – 1800 – pF
Turn-on, 10% VGS to 10% V
Turn-off, 90% VGS to 90% V

DS
DS

–60– ns
– 140 – ns

93 100 107 kHz
STR-S6411 5.1 5.7 6.5 µs
STR-S6411F 3.8 4.5 5.2 µs

Over-Current Threshold V
OCP Current I
Feedback Current I
Soft Start Threshold Voltage V
Soft Start Current I
Power Ground Current I
Supply Current I

I

IN(OFF)

Insulation RMS Voltage V

WM(RMS)

OCP(th)

OCP

FDBK

SS(th)

SS

PG

IN(ON)

VSS = 0 V – -100 – µA
tw = 200 ns – -1.0 -1.5 A
Operating – 23 – mA
Start up, VIN = 12 V – – 500 µA
All terminals simultaneous reference 2000 – – V

160 200 240 mV

-250 -400 -550 µA
– -1.8 – mA
– – 0.4 V

metal plate against backside

Thermal Resistance R

θJM

FET channel to mounting surface – 2.0 – °C/W

NOTES: Negative current is defined as coming out of (sourcing) the specified device terminal.

Typical Data is for design information only.