ALLEGRO A1391, A1392 User Manual

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A1391 and A1392

Micro Power 3 V Linear Hall Effect Sensor with Tri-State Output

and User-Selectable Sleep Mode

These linear Hall effect sensor integrated circuits (ICs) provide a voltage output that is
directly proportional to an applied magnetic field. Before amplification, the sensitivity of
typical Hall effect ICs (measured in mV/G) is directly proportional to the current flowing
through the Hall effect transducer element inside the ICs. In many applications, it is difficult
to achieve sufficient sensitivity levels with a Hall effect sensor IC without consuming more

Package EH, 6-pin MLP/DFN

VREF

1

VCC

2

OUT

34

GND

6

5

SLEEP

GND

AB SO LUTE MAX I MUM RAT INGS*

than 3 mA of current. The A1391 and A1392 minimize current consumption to less than
25 μA through the addition of a user-selectable sleep mode. This makes these devices per­fect for battery-operated applications such as: cellular phones, digital cameras, and portable
tools. End users can control the current consumption of the A1391 and A1392 by applying
a logic level signal to the ¯S¯ ¯L¯ ¯E¯ ¯E¯ ¯P¯ pin. The outputs of the devices are not valid (high-imped-
ance mode) during sleep mode. The high-impedance output feature allows the connection of
multiple A1391 and A1392 Hall effect devices to a single A-to-D converter input.

The quiescent output voltage of these devices is 50 % nominal of the ratiometric supply
reference voltage applied to the VREF pin of the device. The output voltage of the device is
not ratiometric with respect to the SUPPLY pin.

Despite the low power consumption of the circuitry in the A1391 and A1392, the features
required to produce a highly-accurate linear Hall effect IC have not been compromised.
Each BiCMOS monolithic circuit integrates a Hall element, improved temperature-com­pensating circuitry to reduce the intrinsic sensitivity drift of the Hall element, a small-signal
high-gain amplifier, and proprietary dynamic offset cancellation circuits. End of line, post­packaging, factory programming allows precise control of device sensitivity and offset.

This device is available in a small 2.0 × 3.0 mm, 0.75 mm nominal height micro leaded pack­age (MLP). It is Pb (lead) free, with 100 % matte tin leadframe plating.

Supply Voltage, V
Reverse-Supply Voltage, V

.............................................8 V

CC

.......................–0.1 V

RCC

Ratiometric Supply Reference Voltage, V
Reverse-Ratiometric Supply
Reference Voltage, V
Logic Supply Voltage, V

(V

> 2.5 V)...............................................32 V

CC

Reverse-Logic Supply Voltage, V
Output Voltage, V

OUT

Reverse-Output Voltage, V

.........................–0.1 V

RREF

¯S¯ ¯L¯ ¯E¯ ¯E¯ ¯P¯

R¯S¯ ¯L¯ ¯E¯ ¯E¯ ¯P¯

............................ VCC + 0.1 V

......................–0.1 V

ROUT

Temperatures
Operating Ambient, T
Junction, T
Storage, T

*All ratings with reference to ground.

A1391-DS

J(MAX)

.................................–65ºC to 170ºC

S

, Range S .... –20ºC to 85ºC

A

.......................................165ºC

......7 V

REF

.........–0.1 V

Features and Benefits

• High-impedance output during sleep mode

• Compatible with 2.5 to 3.5 V power supplies

• 10 mW power consumption in the active mode

• Miniature MLP package

• Ratiometric output scales with the ratiometric supply reference voltage (VREF pin)

• Temperature-stable quiescent output voltage and sensitivity

• Wide ambient temperature range: –20°C to 85°C

• ESD protection greater than 3 kV

• Solid-state reliability

• Preset sensitivity and offset at final test

Use the following complete part numbers when ordering:

Part Number

A1391SEHLT-T

A1392SEHLT-T 2.50 7-in. reel, 3000 pieces/reel
*Contact Allegro for additional packing options.

Sensitivity

(mV / G, Typ.)

1.25

Packing*

7-in. reel, 3000 pieces/reel

Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 [phone]

www.allegromicro.com

A1391 and A1392

Micro Power 3 V Linear Hall Effect Sensor with Tri-State Output and User-Selectable Sleep Mode

Functional Block Diagram

VCC

SLEEP

Hall Element

Regulator

To all subcircuits

Amp Out

Cancellation

Dynamic Offset

Gain

Filter

Programming Logic

Circuit Reference Current

GND

Offset

R

R

Ratio

Ratio

VREF

/ 2

/ 2

OUT

A1391-DS

Terminal List Table

Pin Name Function

1 VCC Supply
2 OUT Output
3 GND Ground
4 GND Ground
5¯S¯ ¯L¯ ¯E¯ ¯E¯ ¯P¯ Toggle sleep mode
6 VREF Supply for ratiometric reference

Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 [phone]

www.allegromicro.com

2

A1391 and A1392

Micro Power 3 V Linear Hall Effect Sensor with Tri-State Output and User-Selectable Sleep Mode

Device Characteristics Tables

ELECTRICAL CHARACTERISTICS valid through full operating ambient temperature range, unless otherwise noted

Characteristic Symbol Test Conditions Min. Typ.

Supply Voltage V
Nominal Supply Voltage V
Supply Zener Clamp Voltage V
Ratiometric Reference Voltage

2

Ratiometric Reference Zener Clamp Voltage V

CC

CCN

CCZICC

V

REF

REFZIVREF =

= 7 mA, TA = 25°C 6 8.3 – V

3 mA, TA = 25°C 6 8.3 – V

2.5 – 3.5 V
– 3.0 – V

2.5 – V

¯S¯ ¯L¯ ¯E¯ ¯E¯ ¯P¯ Input Voltage –0.1 – V

¯S¯ ¯L¯ ¯E¯ ¯E¯ ¯P¯ Input Threshold

V

V

Ratiometric Reference Input Resistance R

Chopper Stabilization Chopping Frequency f

¯S¯ ¯L¯ ¯E¯ ¯E¯ ¯P¯ Input Current

Supply Current

3

I

SLEEPVSLEEP

I

Quiescent Output Power Supply Rejection4PSR

1

Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance

may vary for individual units, within the specified maximum and minimum limits.

2

Voltage applied to the VREF pin. Note that the V

voltages of less than 2.5 V.

3

If the VREF pin is tied to the VCC pin, the supply current would be I

4

fAC is any ac component frequency that exists on the supply line.

voltage must be less than or equal to Vcc. Degradation in device accuracy will occur with applied

REF

For active mode – 0.45 × V

INH

For sleep mode – 0.20 × V

INL

V

> V

REF

SLEEP

TA = 25°C
V

< V

SLEEP

, V

INH

CC = VCCN,

INL, VCC = VCCN,

250 – – kΩ

TA = 25°C

CC

V

C

CC = VCCN

V

SLEEP

= 25°C

T

A

V

SLEEP

, TA = 25°C – 200 – kHz
= 3 V, V
< V

> V

= V

CC

CCN

INL, VCC = VCCN,

, V

INH

CC = VCCN,

TA = 25°C

VOQfAC

< 1 kHz – –60 – dB

+ V

REF

/ R

REF

CC

–5 –MΩ

–1 –μA

– 0.025 – mA

– 3.2 – mA

1

CC

CC

Max. Units

CC

+ 0.5 V

CC

–V
–V

V

A1391-DS

Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 [phone]

www.allegromicro.com

3

A1391 and A1392

Micro Power 3 V Linear Hall Effect Sensor with Tri-State Output and User-Selectable Sleep Mode

OUTPUT CHARACTERISTICS valid through full operating ambient temperature range, unless otherwise noted

Characteristic Symbol Test Conditions Min. Typ.

Output Voltage Saturation

2

Limits
Maximum Voltage Applied

to Output

Sensitivity

3

Quiescent Output V

Output Resistance

4

V

OUTH

V

OUTL

V

OUTMAXVSLEEP

Sens

OUTQTA

R

Output Load Resistance R
Output Load Capacitance C

Output Bandwidth BW

5,6

Noise

1

Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance

may vary for individual units, within the specified maximum and minimum limits.

2

This test requires positive and negative magnetic fields sufficient to swing the output driver between fully OFF and saturated (ON), respectively. The

value of vector X is NOT intended to indicate a range of linear operation.

3

For V

4

f

5

Noise specification includes digital and analog noise.

5

Values for BW

values other than V

REF

is the output signal frequency

OUT

externalLPF

do not include any noise resulting from noise on the externally-supplied VREF voltage.

REF

= V

V

CCN

B = X, V
B = –X, V

A1391 T
A1392 T

= V

CC

CC

< V

INL

= 25°C, V

A

= 25°C, V

A

= V

CCN

CCN

, V

, V

REF

REF

CC

CC

≤ V

= V
= V

≤ V

CC

REF

REF

CC

= V
= V

CCN

CCN

–V
– 0.1 – V

––V

1.18 1.25 1.31 mV/G

2.35 2.50 2.65 mV/G

= 25°C, B = 0 G – 0.500 × V

f

= 1 kHz, V

OUT

out

f

= 1 kHz, V

out

Output to ground 15 – – kΩ

L

Output to ground – – 10 nF

L

–3 dB point, V
V

= V

CC

CCN

C

bypass

1391

n

1392 C

, the sensitivity can be derived from the following equation: 0.416 × V

BW
C

bypass

bypass

> V

SLEEP

SLEEP

= 1 Vpp sinusoidal,

OUT

= 0.1 μF,

externalLPF

, active mode – 20 – Ω

INH

< V

, sleep mode – 4M – Ω

INL

– 10 – kHz

= 2 kHz

– 6 12 mV

= 0.1 μF, no load – – 20 mV
= 0.1 μF, no load – – 40 mV

1

– 0.1 – V

REF

REF

.

REF

Max. Units

+ 0.1 V

CC

(0.500 × V

REF

± 0.030

)

V

pp

pp

pp

A1391-DS

Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 [phone]

www.allegromicro.com

4

A1391 and A1392

Micro Power 3 V Linear Hall Effect Sensor with Tri-State Output and User-Selectable Sleep Mode

OUTPUT TIMING CHARACTERISTICS1 T

Characteristic Symbol Test Conditions Min. Typ.

Power-On Time
Power-Off Time

1

See figure 1 for explicit timing delays.

2

Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance

may vary for individual units, within the specified maximum and minimum limits.

3

Power-On Time is the elapsed time after the voltage on the SLEEP pin exceeds the active mode threshold voltage,V
reaches 90% of its value. When the device output is loaded with the maximum capacitance of 10 nF, the Power-On Time range is guaranteed for input
SLEEP pin frequencies less than 10 Hz.

4

Power-Off Time is the duration of time between when the signal on the SLEEP pin switches from HIGH to LOW and when ICC drops to under 100 μA.
During this time period, the output goes into the HIGH impedance state.

MAGNETIC CHARACTERISTICS T

3

4

t

PON

t

POFF

= 25°C

A

= 25°C

A

2

Max. Units

–40 60μs
–1 –μs

, until the time the device output

INH

Characteristic Symbol Test Conditions Min. Typ.* Max. Units

Ratiometry ΔV
Ratiometry ΔSens
Positive Linearity Lin+
Negative Linearity Lin –
Symmetry Sym

*Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance
may vary for individual units, within the specified maximum and minimum limits.

OUTQ(ΔV)

(ΔV)

– 100 – %
– 100 – %
– 100 – %
– 100 – %
– 100 – %

A1391-DS

Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 [phone]

www.allegromicro.com

5