ALLEGRO 3935 User Manual
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Package ED, 44-Pin PLCC
Package JP, 48-Pin LQFP
Package LQ, 36-Pin SOIC
26301.102b
3935
3-PHASE POWER MOSFET CONTROLLER
— For Automotive Applications
The A3935 is designed specifically for automotive applications that
require high-power motors. Each provides six high-current gate drive
outputs capable of driving a wide range of n-channel power MOSFETs.
A requirement of automotive systems is steady operation over a
varying battery input range. The A3935 integrates a pulse-frequency
modulated boost converter to create a constant supply voltage for
driving the external MOSFETs. Bootstrap capacitors are utilized to
provide the above battery supply voltage required for n-channel FETs.
Direct control of each gate output is possible via six TTL-compatible inputs. A differential amplifier is integrated to allow accurate
measurement of the current in the three-phase bridge.
Diagnostic outputs can be continuously monitored to protect the
driver from short-to-battery, short-to-supply, bridge-open, and battery
under/overvoltage conditions. Additional protection features include
dead-time, VDD undervoltage, and thermal shutdown.
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Load Supply Voltages, VBAT, VDRAIN,
VBOOST, BOOSTD ... -0.6 V to 40 V
Output Voltage Ranges,
GHA/GHB/GHC, V
SA/SB/SC, VSX............... -4 V to 40 V
GLA/GLB/GLC, V
CA/CB/CC, VCX.......... -0.6 V to 55 V
Sense Circuit Voltages,
CSP,CSN, LSS............... -4 V to 6.5 V
Logic Supply Voltage,
VDD........................... -0.3 V to +6.5 V
Logic Input/Outputs and OVSET, BOOSTS,
CSOUT, VDSTH ......... -0.3 V to 6.5 V
Operating Temperature Range,
TA........................... -40°C to +135°C
Junction Temperature, TJ........... +150°C
Storage Temperature Range,
TS........................... -55°C to +150°C
* Fault conditions that produce excessive
junction temperature will activate device
thermal shutdown circuitry. These conditions
can be tolerated, but should be avoided.
.. -4 V to 55 V
GHX
.... -4 V to 16 V
GLX
The A3935 is supplied in a choice of three packages, a 44-lead
PLCC with copper batwing tabs (suffix ED), a 48-lead low profile QFP
with exposed thermal pad (suffix JP), and a 36-lead 0.8 mm pitch SOIC
(suffix LQ).
FEATURES
!!
! Drives wide range of n-channel MOSFETs in 3-phase bridges
!!
!!
! PFM boost converter for use with low-voltage battery supplies
!!
!!
! Internal LDO regulator for gate-driver supply
!!
!!
! Bootstrap circuits for high-side gate drivers
!!
!!
! Current monitor output
!!
!!
! Adjustable battery overvoltage detection.
!!
!!
! Diagnostic outputs
!!
! Motor lead short-to-battery, short-to-ground, and
bridge-open protection
! Undervoltage protection
!!
! -40 °C to +150 °C, T
!!
!!
! Thermal shutdown
!!
Always order by complete part number, e.g., A3935KLQ .
operation
J
3935
THREE-PHASE POWER
MOSFET CONTROLLER
Functional Block Diagram
See pages 8 and 9 for terminal assignments and descriptions.
2
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
Copyright © 2003 Allegro MicroSystems, Inc.
3935
THREE-PHASE POWER
MOSFET CONTROLLER
A3935KLQ (SOIC)A3935KED (PLCC)
* Measured on “High-K” multi-layer PWB per JEDEC Standard JESD51-7.
† Measured on typical two-sided PWB with power tabs (terminals 1, 2, 11, 12, 22, 23, 34, and 35) connected to copper foil with an
area of 3.8 square inches (2452 mm2) on each side. See Application Note 29501.5, Improving Batwing Power Dissipation, for
additional information.
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3
3935
THREE-PHASE POWER
MOSFET CONTROLLER
ELECTRICAL CHARACTERISTICS: unless otherwise noted at T
V
= 4.75 V to 5.25 V, ENABLE = 22.5 kHz, 50% Duty Cycle, Two Phases Active.
DD
= -40°C to +150°C, V
J
= 7 V to 16 V,
BAT
Limits
Characteristics Symbol Conditions Min Typ Max Units
Power Supply
VDD Supply Current I
V
Supply Current I
BAT
Battery Voltage Operating Range V
Bootstrap Diode Forward Voltage V
Bootstrap Diode Resistance r
Bootstrap Diode Current Limit I
Bootstrap Quiescent Current I
Bootstrap Refresh Time t
DD
BAT
BAT
DBOOTIDBOOT
DBOOT
DM
CX
refresh
All logic inputs = 0 V – – 7.0 mA
All logic inputs = 0 V – – 3.0 mA
7.0 – 40 V
= -Icx = 10 mA, V
I
= -Icx = 100 mA 1.5 – 2.3 V
DBOOT
DBOOT
= V
REG
– V
CX
0.8 – 2.0 V
rD(100 mA) = [VD(150 mA) – VD(50 mA)]/100 mA 2.5 – 7.5 Ω
3 V < [V
– VCX] < 12 V -150 – -1150 mA
REG
VCX = 40 V, GHx = ON 10 – 30 µA
VSX = low to guarantee ∆V = +0.5 V refresh of – – 2.0 µs
0.47 µF Boot Cap at Vcx – Vsx = +10 V
VREG Output Voltage
VREG Dropout Voltage
Gate Drive Avg. Supply Current I
VREG Input Bias Current I
1
2
V
REG
V
REGDO
REG
REGBIAS
V
= 7 V to 40 V, V
BAT
V
= V
REGDO
boost
– V
reg
from Boost Reg 12.7 – 1 4 V
BOOST
, I
= 40 mA – 0.9 – V
reg
No external dc load at VREG, C
Current into V
, ENABLE = 0 – – 4.0 mA
BOOST
= 10 µF – – 40 mA
REG
Boost Supply
V
Output Voltage Limit V
BOOST
V
Output Volt. Limit Hyst. ∆V
BOOST
Boost Switch ON Resistance r
Max. Boost Switch Current I
BOOSTSW
Boost Current Limit Threshold Volt.
OFF Time t
Blanking Time t
BOOSTM
BOOSTM
DS(on)
V
BI(th)
off
blank
V
= 7 V 14.9 – 16.3 V
BAT
I
< 300 mA – 1.4 3.3 Ω
BOOSTD
Increasing V
BOOSTS
NOTES: Typical Data and Typical Characteristics are for design information only.
Negative current is defined as coming out of (sourcing) the specified device terminal.
1. For V
2. With V
< V
BOOSTM
decreasing Dropout Voltage measured at V
BOOST
4
< 40 V power dissipation in the V
BOOST
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
LDO increases. Observe TJ < 150 °C limit.
REG
= V
REG
REGref
– 200 mV where V
35 – 180 mV
– – 300 mA
0.45 – 0.55 V
3.0 – 8.0 µs
100 – 220 ns
= V
REG(ref)
REG
at V
= 16 V.
BOOST
Continued next page …
3935
THREE-PHASE POWER
MOSFET CONTROLLER
ELECTRICAL CHARACTERISTICS: unless otherwise noted at T
VDD = 4.75 V to 5.25 V, ENABLE = 22.5 kHz, 50% Duty Cycle, Two Phases Active.
= -40°C to +150°C, V
J
Characteristics Symbol Conditions
Control Logic
Logic Input Voltages V
Logic Input Currents I
Input Hysteresis V
Logic Output High Voltage V
Logic Output Low Voltage V
I(1)
V
I(0)
I(1)
I
I(0)
hys
O(H)
I(L)
Minimum high level input for logical “one” 2.0 – – V
Maximum low level input for logical “zero” – – 0.8 V
VI = V
DD
VI = 0.8 V 50 – – µA
I
= -800 µA V
O(H)
I
= 1.6 mA – – 0.4 V
O(L)
Gate Drives, GHx ( internal SOURCE or upper switch stages)
Output High Voltage V
Source Current (pulsed) I
Source ON Resistance r
DSL(H)
xU
SDU(on)
GHx: I
GLx: I
V
V
I
xU
I
xU
= –10 mA, Vsx = 0 V
xU
= –10 mA, V
xU
= 10 V, TJ = 25 °C – 800 – mA
SDU
= 10 V, TJ = 135 °C 400 – – mA
SDU
= 0 V
lss
= –150 mA, TJ = 25 °C 4.0 – 10 Ω
= –150 mA, TJ = 35 °C 7.0 – 15 Ω
Gate Drives, GLx ( internal SINK or lower switch stages)
V
Sink Current (pulsed) I
Sink ON Resistance r
xL
DSL(on)
= 10 V, TJ = 25 °C – 850 – mA
DSL
= 10 V, TJ = 135 °C 550 – – mA
V
DSL
I
= +150 mA, TJ = 25 °C 1.8 – 6.0 Ω
xL
= +150 mA, TJ = 135 °C 3.0 – 7.5 Ω
I
xL
Gate Drives, GHx, GLx (General)
Phase Leakage (Source) I
Propagation Delay, Logic only t
Output Skew Time t
Dead Time (Shoot-Through
t
Sx
pd
sk(o)
dead
ENABLE = 0, VSx = 1.7 V 0 – 100 µA
Logic input to unloaded GHx, GLx – – 150 ns
Grouped by edge, phase-to-phase – – 50 ns
Between GHx, GLx transitions of same phase 75 – 180 ns
Prevention)
= 7 V to 16 V,
BAT
Limits
Min Typ Max Units
– – 500 µA
100 – 300 mV
– 0.8 – – V
DD
– 2.26 – V
REG
– 0.26 – V
REG
REG
REG
V
V
NOTES: Typical Data and Typical Characteristics are for design information only.
Negative current is defi ned as coming out of (sourcing) the specifi ed device terminal.
For GH
For GL
X
: V
X
= VCX – V
SDU
= V
SDU
REG
– V
GHX
GLX
, V
, V
DSL
DSL
= V
= V
– VSX, V
GHX
– V
GLX
LSS
, V
DSL(H)
DSL(H)
= VCX – V
= V
REG
– V
– VSX.
SDU
SDU
– V
LSS.
: V
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