Agilent MGA-87563 Technical Data

0.5 – 4 GHz 3 V Low Current GaAs MMIC LNA
Technical Data
MGA-87563
Features
• Lead-free Option Available
• Ultra-Miniature Package
• 1.6 dB Min. Noise Figure at
2.4 GHz
• 12.5 dB Gain at 2.4 GHz
• Single +3 V or 5 V Supply,
4.5 mA Current
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Equivalent Circuit
RF
INPUT
3
GROUND
Surface Mount SOT-363 (SC-70) Package
Pin Connections and Package Marking
GND
1
87
GND
2
INPUT
Note:
Package marking provides orientation and identification.
1, 2, 5
3
6
RF
OUTPUT
4
V
dd
6
5
4
OUTPUT
GND
V
dd
Applications
• LNA or Gain Stage for PCS, ISM, Cellular, and GPS Applications
Description
Agilent’s MGA-87563 is an economical, easy-to-use GaAs MMIC amplifier that offers low noise and excellent gain for applications from 0.5 to 4 GHz. Packaged in an ultra-miniature SOT-363 package, it requires half the board space of a SOT-143 package.
With the addition of a simple shunt-series inductor at the input, the device is easily matched to achieve a noise of 1.6 dB at
2.4 GHz. For 2.4 GHz applications
and above, the output is well matched to 50 Ohms. Below 2 GHz, gain can be increased by using conjugate matching.
The circuit uses state-of-the-art PHEMT technology with self­biasing current sources, a source­follower interstage, resistive feedback, and on-chip impedance matching networks. A patented, on-chip active bias circuit allows operation from a single +3 V or +5 V power supply. Current consumption is only 4.5 mA, making this part ideal for battery powered designs.
Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
dd
V
in
V
out
P
in
T
ch
T
STG
Device Voltage, RF V 6 Output to Ground
RF input or RF Output V +0.5 Voltage to Ground –1.0
CW RF Input Power dBm +13
Channel Temperature °C 150
Storage Temperature °C -65 to 150
[1]
2
Thermal Resistance
θ
= 160°C/ W
ch-c
Notes:
1. Operation of this device above any one of these limits may cause permanent damage.
= 25°C (TC is defined to be the
2. T
C
temperature at the package pins where contact is made to the circuit board).
[2]
:
MGA-87563 Electrical Specifications
[3]
, TC = 25°C, ZO = 50 , Vdd = 3 V
Symbol Parameters and Test Conditions Units Min. Typ. Max.
[3]
G
NF
test
NF
test
[3]
o
Optimum Noise Figure f = 0.9 GHz dB 1.9
f = 2.0 GHz 11 14
f = 2.0 GHz 1.8 2.3
(Tuned for lowest noise figure) f = 1.5 GHz 1.6
f = 2.0 GHz 1.6 f = 2.4 GHz 1.6 f = 4.0 GHz 2.0
G
a
Associated Gain at NF
O
f = 0.9 GHz dB 14.6
(Tuned for lowest noise figure) f = 1.5 GHz 14.5
f = 2.0 GHz 14.0 f = 2.4 GHz 12.5 f = 4.0 GHz 10.3
P
1dB
Output Power at 1 dB Gain Compression f = 0.9 GHz dBm -2.0
f = 1.5 GHz -1.8 f = 2.0 GHz -2.0 f = 2.4 GHz -2.0 f = 4.0 GHz -2.6
IP
3
Third Order Intercept Point f = 2.4 GHz dBm +8
VSWR Output VSWR f = 2.4 GHz 1.8
I
dd
Device Current mA 4.5
Note:
3. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.
3
P 1dB (dBm)
0.5
-5
FREQUENCY (GHz)
2.0
0
-4
4.0
-2
3.0
1.5
3.0 V
2.7 V
-3
3.3 V
-1
1.0 2.5 3.5
MGA-87563 Typical Performance, T
5
4
3
+85
2
NOISE FIGURE (dB)
1
0
0.5
1.0
1.5 2.5 3.5
FREQUENCY (GHz)
2.0
3.0
+25
-40
4.0
Figure 1. Minimum Noise Figure (Optimum Tuning) vs. Frequency and Temperature.
5
4
3
2
NOISE FIGURE (dB)
1
3.3 V
3.0 V
2.7 V
20
15
10
5
ASSOCIATED GAIN (dB)
0
0.5
Figure 2. Associated Gain (Optimum Tuning) vs. Frequency and Temperature.
20
15
10
5
ASSOCIATED GAIN (dB)
= 25°C, Vdd = 3 V
C
1.5
1.0 2.5 3.5
2.0
FREQUENCY (GHz)
3.0
0
-1
-2
-3
P 1 dB (dBm)
-4
-5
0.5
1.0 1.5 2.5 3.5
FREQUENCY (GHz)
2.0
4.0
-40 +25 +85
Figure 3. Output Power for 1 dB Gain Compression (into 50 Ω) vs. Frequency and Temperature.
3.3 V
3.0 V
2.7 V
3.0
4.0
-40 +25 +85
0
0.5
1.0 1.5 2.5 3.5
2.0
FREQUENCY (GHz)
3.0
4.0
Figure 4. Minimum Noise Figure (Optimum Tuning) vs. Frequency and Voltage.
4.0
3.5
3.0
2.5
VSWR (n:1)
2.0
1.5
1.0
0.5
OUTPUT
1.0
1.5 3.52.5
FREQUENCY (GHz)
Figure 7. Input and Output VSWR (into 50 Ω) vs. Frequency.
2.0
INPUT
3.0
4.0
0
0.5
1.5
1.0 2.5 3.5
2.0
FREQUENCY (GHz)
3.0
Figure 5. Associated Gain (Optimum Tuning) vs. Frequency and Voltage.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
NOISE FIGURE (dB)
1.5
1.0
0.5
NF 50
1.5
1.0 2.5 3.5
FREQUENCY (GHz)
2.0
3.0
Ga 50
NF OPT
4.0
Figure 8. 50 Ω Noise Figure and Associated Gain vs. Frequency.
4.0
Figure 6. Output Power for 1 dB Gain Compression (into 50 Ω) vs. Frequency and Voltage.
20
15
10
5
ASSOCIATED GAIN (dB)
0
6
5
4
3
2
CURRENT (mA)
1
0
0
1
2
VOLTAGE (V)
Figure 9. Device Current vs. Voltage.
+85 +50 +25
-40
0
4
3
5
4
MGA-87563 Typical Scattering Parameters
Freq. S
11
S
21
[4]
, T
= 25°C, ZO = 50 , Vdd = 3 V
C
S
12
S
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang Factor
0.1 0.92 -5 -5.6 0.53 -90 -22.7 0.073 -7 0.86 -11 0.41
0.2 0.91 -8 -0.7 0.92 -100 -22.7 0.073 -9 0.85 -18 0.29
0.5 0.88 -20 6.7 2.15 -131 -23.4 0.068 -18 0.78 -43 0.33
1.0 0.79 -35 10.1 3.22 -170 -25.2 0.055 -26 0.61 -75 0.72
1.5 0.73 -49 11.2 3.63 163 -26.2 0.049 -33 0.50 -100 1.02
2.0 0.67 -60 11.4 3.72 140 -26.6 0.047 -39 0.42 -122 1.32
2.5 0.59 -69 11.0 3.54 119 -29.1 0.035 -40 0.31 -141 2.38
3.0 0.50 -78 10.7 3.41 101 -32.5 0.024 -52 0.25 -167 4.29
3.5 0.43 -83 10.1 3.20 85 -35.1 0.018 -12 0.20 172 6.74
4.0 0.37 -96 10.0 3.16 71 -37.7 0.013 -10 0.24 143 9.83
4.5 0.31 -91 8.7 2.72 52 -26.1 0.050 20 0.11 123 3.33
5.0 0.30 -105 8.1 2.55 42 -25.9 0.050 -3 0.17 127 3.48
MGA-87563 Typical Noise Parameters
[4]
, T
= 25°C,
C
ZO = 50 , Vdd = 3 V
ΓΓ
Γ
Frequency NF
o
ΓΓ
opt
(GHz) (dB) Mag. Ang. RN/50
0.5 2.6 0.71 1 1.57
1.0 1.7 0.68 17 0.96
1.5 1.6 0.68 28 0.75
2.0 1.6 0.66 36 0.67
2.5 1.6 0.63 42 0.56
3.0 1.6 0.59 49 0.53
3.5 1.8 0.56 55 0.55
4.0 2.0 0.53 62 0.58
K
Notes:
4. Reference plane per Figure 11 in Applications Information section.
5
MGA-87563 Applications Information
Introduction
The MGA-87563 low noise RF amplifier is designed to simplify wireless RF applications in the
0.5 to 4 GHz frequency range. The MGA-87563 is a two-stage, GaAs Microwave Monolithic Integrated Circuit (MMIC) amplifier that uses feedback to provide wideband gain. The output is matched to 50 and the input is partially matched for optimum noise figure.
A patented, active bias circuit makes use of current sources to “re-use” the drain current in both stages of gain, thus minimizing the required supply current and decreasing sensitivity to varia­tions in power supply voltage.
Test Circuit
The circuit shown in Figure 10 is used for 100% RF testing of Noise Figure and Gain. The input of this circuit is fixed tuned for a conjugate power match (maxi­mum power transfer, or, mini­mum Input VSWR) at 2 GHz. Tests in this circuit are used to guarantee the NF parameters shown in the Electrical Specifications table.
The 4.7 nH inductor, L1 (Coilcraft, Cary, IL part number series 1008CT-040) placed in series with
C1
RF
INPUT
L1
4.7 nH50
test
V
and G
dd
10
50
test
RF
OUTPUT
the input of the amplifier is all that is necessary to match the input to 50 at 2 GHz.
Phase Reference Planes
The positions of the reference planes used to measure S-Parameters and to specify Γ
opt
for the Noise Parameters are shown in Figure 11. As seen in the illustration, the reference planes are located at the extremities of the package leads.
Biasing
The MGA-87563 is a voltage­biased device and operates from a single +3 volt power supply. With a typical current drain of only 4.5 mA, the MGA-87563 is very well suited for use in battery powered applications. All bias regulation circuitry is integrated into the MMIC, eliminating the need for external DC compo­nents. RF performance is very consistent for 3-volt battery supplies that may range from 2.7 to 3.3 volts, depending on battery “freshness” or state of charge for rechargeable batteries. Operation up to +5 volts is discussed at the end of the Applications section.
The test circuit in Figure 10 illustrates a suitable method for bringing bias into the MGA-87563. The bias connection must be designed so that it adequately bypasses the Vdd terminal while not inadvertently creating any resonances at frequencies where the MGA-87563 has gain.
REFERENCE
PLANES
TEST CIRCUIT
The 10 resistor, R1, serves to “de-Q” any potential resonances in the bias line that could lead to low gain, unwanted gain varia­tions or device instability. The power supply end of R1 is bypassed to ground with capacitor C1. The suggested value for C1 is 100 pF. Significantly higher values for C1 are not recommended. Many higher value chip capacitors (e.g., 1000 pF) are not of sufficiently high quality at these frequencies to function well as a RF bypass without adding harmful parasitics or self­resonances.
While the input and output terminals are internally resistively grounded, these pins should not be considered to be current sinks. Connection of the MGA-87563 amplifier to circuits that are at ground potential may be made without the additional cost and PCB space needed for DC block­ing capacitors. If the amplifier is to be cascaded with active circuits having non-zero voltages present, the use of series blocking capacitors is recommended.
Input Matching
The input of the MGA-87563 is partially matched internally to 50 . The use of a simple input conjugate matching circuit (such as shown in Figure 10 for 2 GHz), will lower the noise figure considerably. A significant advan­tage of the MGA-87563’s design is that the impedance match for NF (minimum noise figure) is very close to a conjugate power match. This means that a very low noise figure can be realized simultaneously with a low input VSWR. The typical difference
o
Figure 10. Test Circuit for 2 GHz.
Figure 11. Reference Planes.
6
between the noise figure obtain­able with a conjugate power match at the input and NFo is only about 0.2 dB.
Output Matching
The output of the MGA-87563 is matched internally to 50 above
1.8 GHz. The use of a conjugate matching circuit, such as a simple series inductor, can increase the gain considerably at lower frequencies. Matching the output will not affect the noise figure.
Stability
If the MGA-87563 is cascaded with highly reactive stages (such as filters) some precautions may be needed to ensure stability. The low frequency stability (under
1.5 GHz) of the MGA-87563 can be enhanced by adding a series R-L network in shunt with the output, as shown in Figure 12. The inductor can be either a chip component or a high impedance transmission line as shown in the figure. Component values are selected such that the output of the MGA-87563 will be resistively loaded at low frequencies while allowing high frequency signals to pass the stability load with minimal loss.
Typical values for the resistor are in the 25 to 50 range. A suggested starting place for the inductor is a 0.35 to 0.40-inch long microstripline with a width of
DC BLOCKING
MGA 87563
Figure 12. Output Circuitry for Low Frequency Stability.
CAPACITOR
25-50
HIGH IMPEDANCE TRANSMISSION OR INDUCTOR
OUTPUT
RF
0.020 inches, using 0.031-inch thick FR-4 (ε
= 4.8) circuit board
r
as the substrate.
For applications near 1.5 GHz, gain (and output power) may be traded off for increased stability.
Some precautions regarding the V
connection of the MGA-87563
dd
are also recommended to ensure stability within the operating frequency range of the device. It is important that the connection to the power supply be properly bypassed to realize full amplifier performance. Refer to the Biasing section above for more information.
SOT-363 PCB Layout
A PCB pad layout for the minia­ture SOT-363 (SC-70) package is shown in Figure 13 (dimensions are in inches). This layout provides ample allowance for package placement by automated assem­bly equipment without adding parasitics that could impair the high frequency RF performance of the MGA-87563. The layout is shown with a nominal SOT-363 package footprint superimposed on the PCB pads.
0.026
0.079
0.039
0.018
Dimensions in inches.
Figure 13. Recommended PCB Pad Layout for Agilent’s SC70 6L/SOT-363 Products.
RF Layout
The RF layout in Figure 14 is suggested as a starting point for designs using the MGA-87563 amplifier. Adequate grounding is needed to obtain maximum per­formance and to obviate potential instability. All three ground pins of the MMIC should be connected to RF ground by using plated through holes (vias) near the package terminals.
It is recommended that the PCB traces for the ground pins NOT be connected together underneath the body of the package. PCB pads hidden under the package cannot be adequately inspected for SMT solder quality.
FR-4 or G-10 PCB material is a good choice for most low cost wireless applications. Typical board thickness is 0.025 or
0.031 inches. The width of 50
microstriplines in these PCB thicknesses is also convenient for mounting chip components such as the series inductor at the input for impedance matching or for DC blocking capacitors. For noise figure sensitive applications, the use of PTFE/glass dielectric materials may be warranted to minimize transmission line losses at the amplifier input.
Higher Bias Voltages
While the MGA-87563 is designed for use in +3 volt battery powered applications, the internal bias regulation circuitry allows it to be
V
DD
RF OUTPUT
50
87
50
RF INPUT
Figure 14. RF Layout.
7
easily operated with any power supply voltage from +2.7 to 5 volts. Figure 15 shows an increase of approximately 1 dB in the associated gain with +5 volts applied. The P
output power
1dB
(Figure 17) is also higher by about 1 dBm. The effect of higher Vdd on noise figure is negligible as indicated in Figure 16.
17
16
15
14
13
12
11
ASSOCIATED GAIN (dB)
10
9
0.5
1.0
1.5 3.0 3.5
FREQUENCY (GHz)
Figure 15. Associated Gain vs. Frequency at Vdd = 5 Volts.
3.5
3.0
2.5
2.0
1.5
OPTIMUM NF (dB)
1.0
2.0
2.5
4.0
Package Dimensions
Outline 63 (SOT-363/SC-70)
HE
e
D
A1
b
DIMENSIONS (mm)
SYMBOL
E D
HE
A A2 A1 Q1
e
b
c
L
MIN.
1.15
1.80
1.80
0.80
0.80
0.00
0.10
0.15
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.650 BCS
0.30
0.20
0.30
E
Q1
A2
A
L
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form.
6. Package surface to be mirror finish.
c
0.5
0.5
1.0
1.5 3.0 3.5
FREQUENCY (GHz)
2.0
2.5
4.0
Figure 16. Optimum Noise Figure vs. Frequency at Vdd = 5 Volts.
0.00
-0.50
-1.00
P 1 dB (dBm)
-1.50
-2.00
0.6
2.41.2
1.8 3.0 3.6 4.2
FREQUENCY (GHz)
Figure 17. Output Power at 1 dB Gain Compression vs. Frequency at Vdd = 5 Volts.
Part Number Ordering Information
No. of
Part Number Devices Container
MGA-87563-TR1 3000 7" Reel
MGA-87563-TR2 10000 13" Reel
MGA-87563-BLK 100 antistatic bag
MGA-87563-TR1G 3000 7" Reel
MGA-87563-TR2G 10000 13" Reel
MGA-87563-BLKG 100 antistatic bag
Note: For lead-free option, the part number will have the
character “G” at the end.
Device Orientation
REEL
CARRIER
8 mm
TAPE
USER FEED DIRECTION
COVER TAPE
Tape Dimensions and Product Orientation
For Outline 63
P
P
0
C
D
TOP VIEW
4 mm
87 87 87 87
P
2
END VIEW
E
F
W
CAVITY
PERFORATION
CARRIER TAPE
COVER TAPE
DISTANCE
t
(CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
1
10° MAX.
A
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
A
LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER
DIAMETER PITCH POSITION
WIDTH THICKNESS
WIDTH TAPE THICKNESS
CAVITY TO PERFORATION (WIDTH DIRECTION)
CAVITY TO PERFORATION (LENGTH DIRECTION)
0
B
0
K
0
P D
1
D P
0
E
W t
1
C T
t
F
P
2
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
1.55 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
8.00 + 0.30 - 0.10
0.254 ± 0.02
5.40 ± 0.10
0.062 ± 0.001
3.50 ± 0.05
2.00 ± 0.05
K
0
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
0.315 + 0.012
0.0100 ± 0.0008
0.205 + 0.004
0.0025 ± 0.0004
0.138 ± 0.002
0.079 ± 0.002
D
1
10° MAX.
B
0
For product information and a complete list of Agilent contacts and distributors, please go to our web site.
www.agilent.com/semiconductors
E-mail: SemiconductorSupport@agilent.com Data subject to change. Copyright © 2004 Agilent Technologies, Inc. Obsoletes 5965-9688E November 16, 2004 5989-1803EN
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