Agilent HSMS-2800, HSMS-2802, HSMS-2803, HSMS-2804, HSMS-2805 Schematic [ru]

Surface Mount RF Schottky
Barrier Diodes

Technical Data

HSMS-280x Series

Features

• Surface Mount Packages

• High Breakdown Voltage

• Low FIT (Failure in Time)
Rate*

• Six-sigma Quality Level

• Single, Dual and Quad
Versions

• Tape and Reel Options
Available

• Lead-free Option Available

* For more information see the

Surface Mount Schottky Reliability
Data Sheet.

Description/Applications

These Schottky diodes are
specifically designed for both
analog and digital applications.
This series offers a wide range of
specifications and package
configurations to give the
designer wide flexibility. The
HSMS-280x series of diodes is
optimized for high voltage
applications.

Package Lead Code Identification, SOT-23/SOT-143
(Top View)

SINGLE

3

12

#0

UNCONNECTED

PAIR

34

12

#5

SERIES

3

12

#2

RING

QUAD

34

12

#7

Package Lead Code
Identification, SOT-323
(Top View)

SINGLE

B

COMMON

ANODE

SERIES

C

COMMON

CATHODE

COMMON

ANODE

3

12

#3

BRIDGE

QUAD

34

12

#8

Package Lead Code
Identification, SOT-363
(Top View)

HIGH ISOLATION

UNCONNECTED PAIR

654

123

CATHODE QUAD

654

COMMON

CATHODE

K

COMMON

3

12

#4

UNCONNECTED

654

123

ANODE QUAD

654

TRIO

L

COMMON

Note that Agilent’s manufacturing
techniques assure that dice found
in pairs and quads are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.

E

F

123

M

BRIDGE

QUAD

654

123

P

123

N

RING

QUAD

654

123

R

Pin Connections and Package Marking, SOT-363

2

1

2

GUx

6

Notes:

1. Package marking provides

5

orientation and identification.

ESD WARNING:

Handling Precautions Should Be Taken
To Avoid Static Discharge.

2. See “Electrical Specifications” for

3

Absolute Maximum Ratings

4

appropriate package marking.

[1]

TC = 25°C

Symbol Parameter Unit SOT-23/SOT-143 SOT-323/SOT-363

I

f

P

IV

T

j

T

stg

θ

jc

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to the device.

2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.

Electrical Specifications TA = 25°C, Single Diode

Part Package Breakdown Forward Voltage Leakage Maximum Dynamic

Number Marking Lead Voltage Voltage VF (V) @ IR (nA) @ Capacitance Resistance

[5]

HSMS

2800 A0
2802 A2
2803 A3
2804 A4
2805 A5
2807 A7
2808 A8

280B A0
280C A2
280E A3
280F A4
280K AK

280L AL
280M H
280N N

280P AP

280R O

Test Conditions IR = 10 µAIF = 1 mA VF = 0 V IF = 5 mA

Notes:

1. ∆VF for diodes in pairs and quads in 15 mV maximum at 1 mA.

2. ∆CTO for diodes in pairs and quads is 0.2 pF maximum.

3. Package marking code is in white.

4. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.

5. See section titled “Quad Capacitance.”

6. RD = RS + 5.2 Ω at 25°C and If = 5 mA.

7. Package marking code is laser marked.

Forward Current (1 µs Pulse) Amp 1 1

Peak Inverse Voltage V Same as V

BR

Same as V

BR

Junction Temperature °C 150 150

Storage Temperature °C -65 to 150 -65 to 150

Thermal Resistance

Code Code Configuration VBR (V) VF (mV) IF (mA) VR (V) CT (pF) RD (

[3]

0 Single 70 410 1.0 15 200 50 2.0 35

[3]

2 Series

[3]

3 Common Anode

[3]

4 Common Cathode

[3]

5 Unconnected Pair

[3]

7 Ring Quad

[3]

8 Bridge Quad

[7]

B Single

[7]

C Series

[7]

E Common Anode

[7]

F Common Cathode

[7]

K High Isolation

[7]

[7]

[7]

[7]

[7]

Unconnected Pair

L Unconnected Trio
M Common Cathode Quad
N Common Anode Quad

P Bridge Quad

R Ring Quad

[5]

[2]

°C/W 500 150

[4]

Maximum Maximum

Minimum Maximum Forward Reverse Typical

[5]

f = 1 MHz

ΩΩ

Ω)

ΩΩ

[6]

3

Quad Capacitance

Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from

In a quad, the diagonal capaci­tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula

the others, allowing accurate
capacitance measurement of each

C

DIAGONAL

= _______ + _______

branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as “CM”, and it

C

1

is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be

C

C

2

calculated by the formulas given
below.

Linear Equivalent Circuit, Diode Chip

R

j

R

S

C

j

RS = series resistance (see Table of SPICE parameters)

= junction capacitance (see Table of SPICE parameters)

C

j

8.33 X 10

Rj =

I

where
I

= externally applied bias current in amps

b

I

= saturation current (see table of SPICE parameters)

s

T

= temperature, °K

n = ideality factor (see table of SPICE parameters)

Note:
To effectively model the packaged HSMS-280x product,
please refer to Application Note AN1124.

b

+ I

-5

nT

s

C1 x C2 C3 x C

C1 + C2 C3 + C

C

3

C

4

The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula

4

4

C

ADJACENT

= C1 + ____________

1 1 1

–– + –– + ––

C2 C3C

A

This information does not apply
to cross-over quad diodes.

B

SPICE Parameters

Parameter Units HSMS-280x

B

V

C

J0

E

G

I

BV

I

S

N 1.08

R

S

P

B

P

T

M 0.5

V75
pF 1.6
eV 0.69

AE-5

A3E-8

Ω 30

V 0.65

1

4

2

4

Typical Performance, TC = 25°C (unless otherwise noted), Single Diode

100

10

1

0.1

– FORWARD CURRENT (mA)

F

I

0.01
0 0.1 0.30.2 0.5 0.60.4 0.80.7 0.9

VF – FORWARD VOLTAGE (V)

TA = +125°C
T

= +75°C

A

T

= +25°C

A

T

= –25°C

A

Figure 1. Forward Current vs.
Forward Voltage at Temperatures.

2

1.5

1

– CAPACITANCE (pF)

0.5

T

C

0

0102030 5040

VR – REVERSE VOLTAGE (V)

Figure 4. Total Capacitance vs.
Reverse Voltage.

100,000

10,000

1000

100

10

– REVERSE CURRENT (nA)

R

1

I

0102030 5040

VR – REVERSE VOLTAGE (V)

TA = +125°C
T

= +75°C

A

T

= +25°C

A

Figure 2. Reverse Current vs.
Reverse Voltage at Temperatures.

30

10

1

- FORWARD CURRENT (mA)

F

I

0.3

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VF - FORWARD VOLTAGE (V)

IF (Left Scale)

∆VF (Right Scale)

Figure 5. Typical Vf Match, Pairs and
Quads.

1000

100

10

– DYNAMIC RESISTANCE (Ω)

D

R

1

0.1 1 100

IF – FORWARD CURRENT (mA)

Figure 3. Dynamic Resistance vs.
Forward Current.

30

10

1

- FORWARD VOLTAGE DIFFERENCE (mV)

F

0.3

∆V

10