Agilent AT-41511, AT-41533 Schematic [ru]

General Purpose, Low Noise
NPN Silicon Bipolar Transistor

Technical Data

AT-41511
AT-41533

Features

• General Purpose NPN
Bipolar Transistor

• 900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB G
AT-41533: 1 dB NF, 14.5 dB G

• Characterized for 3, 5, and
8 Volt Use

• SOT-23 and SOT-143 SMT
Plastic Packages

• Tape-and-Reel Packaging
Option Available

[1]

Outline Drawing

EMITTER COLLECTOR

415

BASE EMITTER

SOT 143 (AT-41511)

COLLECTOR

415

Description

Agilent’s AT-41511 and AT-41533
are general purpose NPN bipolar
transistors that offer excellent
high frequency performance at an

A

economical price. The AT-41533

A

uses the 3 lead SOT-23, while the
AT-41511 places the same die in
the lower parasitic 4 lead SOT-

143. Both packages are industry
standard, and compatible with
high volume surface mount
assembly techniques.

The 4 micron emitter-to-emitter
pitch of these transistors yields
high performance products that
can perform a multiplicity of
tasks. The 14 emitter finger
interdigitated geometry yields an
intermediate-sized transistor with
easy to match to impedances, low
noise figure, and moderate
power.

Optimized for best performace
from a 5 to 8 volt bias supply,
these transistors are also good
performers at 2.7 V. Applications

include use in wireless systems as
an LNA, gain stage, buffer,
oscillator, or active mixer.

An optimum noise match near
50 ohms at 900 MHz makes these
devices particularly easy to use as
LNAs. Typical amplifier designs
at 900 MHz yield 1 dB noise
figures with 15 dB or more
associated gain at a 5 V, 5 mA
bias, with good gain and noise
figure obtainable at biases as low
as 2 mA.

The AT-415 series bipolar
transistors are fabricated using
Agilent’s 10 GHz fT Self-Aligned­Transistor (SAT) process. The die
are nitride passivated for surface
protection. Excellent device
uniformity, performance and
reliability are produced by the
use of ion-implantation, self­alignment techniques, and gold
metalization in the fabrication of
these devices.

BASE EMITTER

SOT 23 (AT-41533)

1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices.”

2

AT-41511, AT-41533 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V
V
V

T

EBO
CBO
CEO

I

C

P

T

T

STG

j

Emitter-Base Voltage V 1.5
Collector-Base Voltage V 20
Collector-Emitter Voltage V 12
Collector Current mA 50
Power Dissipation

[2,3]

mW 225
Junction Temperature °C 150
Storage Temperature °C -65 to 150

[1]

Thermal Resistance:

θ

=550°C/W

jc

Notes:

1. Operation of this device above any one
of these parameters may cause
permanent damage.

2. T

Mounting Surface

3. Derate at 1.82 mW/°C for TC > 26°C.

= 25°C.

[2]

Electrical Specifications, TA = 25°C

AT-41511 AT-41533

Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max

h

I

CBO

I

EBO

FE

Forward Current Transfer Ratio VCE = 5 V - 30 150 270 30 150 270

IC = 5 mA
Collector Cutoff Current VCB = 3 V µA 0.2 0.2
Emitter Cutoff Current VEB = 1 V µA 1.0 1.0

Characterization Information, TA = 25°C

AT-41511 AT-41533

Symbol Parameters and Test Conditions Units Min Typ Min Typ

NF Noise Figure f = 0.9 GHz dB 1.0 1.0

VCE = 5 V, IC = 5 mA f = 2.4 GHz 1.7 1.6

G

Associated Gain f = 0.9 GHz dB 15.5 14.5

A

VCE = 5 V, IC = 5 mA f = 2.4 GHz 11 9

P

1dB

Power at 1 dB Gain Compression (opt tuning) f = 0.9 GHz dBm 14.5 14.5
VCE = 5 V, IC = 25 mA

G

1dB

Gain at 1 dB Gain Compression (opt tuning) f = 0.9 GHz dB 17.5 14.5
VCE = 5 V, IC = 25 mA

IP

Output Third Order Intercept Point, f = 0.9 GHz dBm 25 25

3

VCE = 5 V, IC =25 mA (opt tuning)

2

|S

|

21E

Gain in 50 Ω system; VCE = 5 V, IC = 5 mA f = 0.9 GHz dB 13.5 15.5 10.8 12.8

f = 2.4 GHz 7.9 5.2

Ordering Information

Part Number Increment Comments

AT-41511-BLK 100 Bulk
AT-41511-TR1 3000 7" Reel

AT-41533-BLK 100 Bulk
AT-41533-TR1 3000 7" Reel

AT-41511, AT-41533 Typical Performance

3

3.0

2.5

2.0

1.5

1.0

NOISE FIGURE (dB)

0.5

0

0.1

1.1

0.6 2.1 2.6
FREQUENCY (GHz)

1.6

Figure 1. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 2.7 V.

20

10, 25 mA

5

5 mA
2 mA

10, 25 mA

5 mA
2 mA

PKG 11

15

10

PKG 11 (dB)

a

G

25 mA

10 mA

2, 5 mA

25

20

15

10

3.0

2.5

2.0

1.5

1.0

NOISE FIGURE (dB)

0.5

0

0.1

1.1

0.6 2.1 2.6
FREQUENCY (GHz)

1.6

Figure 2. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 5 V.

20

PKG 11

15

PKG 33

10

(dB)

a

G

PKG 33 (dB)

a

G

5

25 mA

2 mA

10 mA

5 mA

10, 25 mA
5 mA
10, 25 mA
5 mA

3.0

2.5

2.0

1.5

1.0

NOISE FIGURE (dB)

0.5

0

0.1

0.6 2.1 2.6
FREQUENCY (GHz)

1.1

1.6

25 mA

10 mA
5 mA

Figure 3. AT-41511 and AT-41533
Minimum Noise Figure vs. Frequency
and Current at VCE = 8 V.

20

PKG 11

15

(dB)

a

G

PKG 33

10

5

10, 25 mA

5 mA

10, 25 mA

5 mA

0

0.1

0.6 2.1 2.6
FREQUENCY (GHz)

PKG 33

1.61.1

Figure 4. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 2.7 V.

20

15

10

(dBm)

1 dB

P

5

0

0.1

1.1

0.6 2.1 2.6
FREQUENCY (GHz)

1.6

25 mA
10 mA

5 mA

Figure 7. AT-41511 and AT-41533
P

vs. Frequency and Bias at

1dB

VCE= 2.7 V, with Optimal Tuning.

5

0

0.6 2.1 2.6

0.1

1.1

FREQUENCY (GHz)

1.6

Figure 5. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 5 V.

20

15

10

(dBm)

1 dB

P

5

0

0.1

1.1

0.6 2.1 2.6
FREQUENCY (GHz)

1.6

25 mA

10 mA

5 mA

Figure 8. AT-41511 and AT-41533
P

vs. Frequency and Bias at

1dB

VCE= 5 V, with Optimal Tuning.

0

0.1

0.6 2.1 2.6
FREQUENCY (GHz)

1.1

1.6

Figure 6. AT-41511 and AT-41533
Associated Gain vs. Frequency and
Current at VCE = 8 V.

20

25 mA

15

10 mA

10

(dBm)

1 dB

P

5

0

0.1

0.6 2.1 2.6
FREQUENCY (GHz)

1.1

1.6

Figure 9. AT-41511 and AT-41533
P

vs. Frequency and Bias at

1dB

VCE= 8 V, with Optimal Tuning.

5 mA

4

GAIN (dB)

0

30

0

FREQUENCY (GHz)

145

25

15

5

3

20

10

2

MSG

MAG

MSG

S21

GAIN (dB)

0

30

0

FREQUENCY (GHz)

145

25

15

5

3

20

10

2

MSG

MAG

MSG

S21

AT-41511 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 5 mA

Freq. S

11

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.84 -27 23.44 14.854 161 -34.89 0.018 76 0.95 -11

0.5 0.59 -102 19.01 8.924 115 -24.88 0.057 48 0.65 -34

0.9 0.49 -141 15.09 5.684 93 -22.97 0.071 43 0.51 -39

1.0 0.48 -149 14.30 5.189 89 -22.73 0.073 43 0.49 -39

1.5 0.46 -176 11.15 3.61 72 -21.21 0.087 44 0.44 -43

1.8 0.46 170 9.69 3.051 64 -20.26 0.097 45 0.43 -45

2.0 0.46 162 8.86 2.774 59 -19.74 0.103 45 0.42 -47

2.4 0.47 148 7.37 2.337 50 -18.64 0.117 46 0.42 -51

3.0 0.5 130 5.58 1.901 36 -17.14 0.139 45 0.41 -59

4.0 0.56 106 3.25 1.454 17 -14.89 0.18 42 0.4 -73

5.0 0.61 87 1.36 1.17 0 -12.96 0.225 37 0.4 -91

S

21

S

12

S

22

AT-41511 Typical Noise Parameters,

Common Emitter, Z

Freq F

= 50 Ω, V

o

min

GHz dB Mag Ang -

0.1 0.8 0.45 6 0.25

0.9 1.0 0.39 63 0.19

1.8 1.4 0.32 137 0.12

2.4 1.7 0.40 177 0.09

= 2.7 V, I

CE

Γ

opt

= 5 mA

C

R

n

AT-41533 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 5 mA

Freq. S

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.78 -30 23.43 14.834 155 -33.98 0.020 75 0.94 -12

0.5 0.35 -99 16.91 7.004 103 -24.58 0.059 60 0.62 -28

0.9 0.23 -144 12.50 4.219 84 -21.21 0.087 62 0.55 -30

1.0 0.21 -154 11.65 3.826 80 -20.54 0.094 63 0.54 -31

1.5 0.20 162 8.50 2.661 64 -17.46 0.134 64 0.52 -36

1.8 0.22 144 7.09 2.261 56 -15.97 0.159 63 0.51 -40

2.0 0.23 134 6.30 2.065 51 -15.09 0.176 63 0.51 -42

2.4 0.26 118 4.97 1.773 42 -13.39 0.214 61 0.50 -48

3.0 0.30 101 3.45 1.488 30 -11.21 0.275 56 0.48 -58

4.0 0.37 80 1.66 1.211 13 -8.20 0.389 46 0.45 -80

5.0 0.44 62 0.35 1.041 -1 -5.90 0.507 33 0.42 -104

11

AT-41533 Typical Noise Parameters,

Common Emitter, Z

Freq F

GHz dB Mag Ang -

0.1 0.7 0.45 8 0.20

0.9 1.0 0.25 94 0.13

1.8 1.4 0.38 -159 0.08

2.4 1.6 0.54 -122 0.16

o

= 50 Ω, V

min

= 2.7 V, I

CE

Γ

opt

S

21

= 5 mA

C

Figure 10. AT-41511 Gains vs.
Frequency at VCE = 2.7 V, IC = 5 mA.

S

12

R

n

Figure 11. AT-41533 Gains vs.
Frequency at VCE = 2.7 V, IC = 5 mA.

S

22