AGERE LG1626DXC Datasheet

Data Sheet February 1999
LG1626DXC Modulator Driver

Features

High data-rate optical modulator driver
Adjustable output voltage up to 3 Vp-p (RL = 50 Ω)
Adjustable modulator dc offset
Operation up to 3 Gbits/s
Single ended or differential inputs
Single –5.2 V power supply
90 ps rise and fall times
Enable control

Applications

SONET/SDM transmission systems
SONET/SDM test equipment
Optical transmitters
GND
BG2P5
TH
V
IN
V

Functional Description

The LG1626DXC is a gallium-arsenide (GaAs) inter­grated circuit used to provide voltages to drive optical modulators in high-speed non-return-to-zero (NRZ) transmission systems. The device is made in a high­performance 0.9 µm gate GaAs hetero-junction FET technology that utilizes high-density MIM capacitors, airbridge interco nnec t, and NiCr film precis i on resi s­tors. The device contains four cascaded stages, operates with a single –5.2 V power supply, and accepts ECL 100K level inputs. The output is an open drain designed to drive 50 loads. Voltages control the output modulation amplitude and modula­tor dc offset. A –2.5 V band-gap reference is required for stable operation over temperature and varying power supply voltage. The LG1626DXC is available in a 24-lead hermetic, gull-wing package.
MK
MK
DC-ADJ
V
V
TH
V
MOD_E
IN
MOD
V
SS3
V
SS2
V
SS1
V

Figure 1. Functional Diagram

OUT
V
OUT-DC
V
5-6549(F)
LG1626DXC Modulator Driver
Pin Information
GND MKMK
TH
V
50
IN
V
IN
V
50
TH
V
Data Sheet
February 1999
MOD
50
DC-ADJ
V
V
OUT
V
+ –
+
SS1
V
MOD_E
SS3
V
SS2
V
5-6550(F)

Figure 2. LG1626DXC Die Block Diagram

2 Lucent Technologies Inc.
Data Sheet February 1999
LG1626DXC Modulator Driver
Pin Information
Note: Figure is not to scale.
(continued)
GND
GND
GND
V
TH
V
V
24
23
1
IN
V
IN
V
TH
2
3
4
5
6
7
8
BG2P5
MOD_E
V
V
22
21
LG1626DXC
MODULATOR
DRIVER
9
10
GND
GND
V
20
11
MK
V
19
DC-ADJ
18
17
16
15
14
13
12
MK
V
OUT-DC
V
OUT
V
GND
GND
GND
5-6551(F)
SS2
SS3
MOD
SS1
SS1

Figure 3. LG1626DXC Package Pinout

Table 1. LG1626DXC Pin Description

Symbol Pin Description
GND 1, 3, 4, 9, 10, 13, 14, 15,
Package Bottom
V
--------- ­V
IN
----------­V
TH
IN
2 Data input. 5 Complementary data input. 6 Complementary threshold control (eye crossing) input.
BG2P5 7 –2.5 V band-gap reference (
Ground. For optimum performance, the package bottom must be soldered to the ground plane.
National Semiconductor
MOD_E 8 Modulation enable (connect to V
MK MK
V
OUT
VOUT-DC
V
DC-ADJ
V
SS2
V
SS3
V
MOD
V
SS1
V
TH
11 Complementary mark density output. 12 Mark density output. 16 Output, ac couple to 50 modulator. 17 Output, modulator dc offset. 18 Modulator dc offset control input. 19 V 20 V
supply –5.2 V for output prebias.
SS2
supply –5.2 V for output modulation.
SS3
21 Output modulation control input.
22, 23 V
supply –5.2 V.
SS1
24 Threshold control (eye crossing) input.
* LM4040).
to enable, float to disable).
SS1
National Semiconductor
*
is a registered trademark of National Semiconductor Corporation.
Lucent Technologies Inc. 3
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