AGERE D572C22SS, D572C22NS, D572C22GS, D572C22FS, D572C22BS Datasheet
...
Advance Data Sheet
February 2000
D572-Type 1.5 µ m Uncooled DFB
for 2.5 Gbits/s and High Bandwidth Applications
The low-profile D572-Type Laser Module is ideally suited for
OC-48 SONET and other high-speed digital applications.
FastLight
™ Laser Module
Applications
■
SONET OC-48/STM-16 systems
■
Telecommunications
■
Secure digital data systems
Benefits
■
Easily board mounted
■
Gull-wing leads
■
No additional heat sinks required
■
Low-cost alternative to industry-standard, 14-pin
isolated laser module (ILM)
■
Highly efficient DFB-MQW laser structure allows
for lower threshold and drive currents, and reduced
power consumption
Features
8-pin package suitable for SONET applications
■
Narrow linewidth, distributed feedback, multiquan-
■
tum-well (DFB-MQW)1510 nm or 1550 nm laser
with single-mode fiber pigtail
■
Operating temperature range: –25 ° C to +70 ° C
(–25 ° C to +85 ° C versions under development)
No TEC required
■
■
High output power: typical 2.0 mW peak power
coupled into single-mode fiber
■
Hermetically sealed active components
Internal back-facet monitor
■
■
Built-in thermistor and Bias T
■
25 Ω input impedance
Internal isolator
■
■
Telcordia Technologies
gram
■
Bandwidth > 3 GHz
* TA-983 qualification pro-
Description
The D572-Type Uncooled Laser Module consists of a
laser diode coupled to a single-mode fiber pigtail.
The device is available in a standard, 8-pin configuration (see Figure 1 and/or Table 1) and is ideal for
long-reach (SONET) and other high-speed digital
applications.
The module includes a narrow linewidth (<1 nm)
DFB-MQW single-mode laser and an InGaAs PIN
photodiode back-facet monitor in a hermetically
sealed package.
This package is optimized for a 25 Ω input impedance and allows for dc biasing through an internal
bias tee. A thermistor has been included for feedback
to board-level bias circuitry, if needed.
*
T elcordia Technologies
Research, Inc.
is a trademark of Bell Communications
°
°
D572-Type 1.5 µ m Uncooled DFB
FastLight
Laser Module Advance Data Sheet
for 2.5 Gbits/s and High-Bandwidth Applications February 2000
Description
(continued)
The device characteristics listed in this document are
met at 2.0 mW output power. Higher- or lower-power
operation is possible. Under conditions of a fixed
photodiode current, the change in optical output is typically ± 0.5 dB over an operating temperature range of
–25 ° C to +70 ° C.
This device incorporates the new Laser 2000 manufacturing process from the Optoelectronic Products unit of
Lucent Technologies Microelectronics Group. Laser
2000 is a low-cost platform that targets high-volume
manufacturing and tighter product distributions on all
optical subassemblies. This platform incorporates an
advanced optical design that is produced on one of the
highly automated production lines at the Opotelectronic
manufacturing facility. The Laser 2000 platform is qualified for the central office and uncontrolled environments, and can be used for applications requiring high
performance and low cost.
43 12
Table 1. Pin Descriptions
Pin Number Connection
1 Thermistor
2 Thermistor, package GND
3 Laser dc bias cathode (–) choke
4 Photodiode cathode
5 Photodiode anode
6 Laser diode anode (+)
7 Laser RF input cathode (–) 25 Ω
8 Laser diode anode (+)
56 87
1-900.b
Figure 1. D572-Type Uncooled DFB Mini 8-Pin Laser Module Schematic, Top View
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operations sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Parameter Symbol Min Max Unit
Maximum Peak Laser Drive Current or
Maximum Fiber Power*
Peak Reverse Laser Voltage:
Laser
Monitor
Monitor Forward Current I
Operating Case Temperature Range T
Storage Case Temperature Range T
Lead Soldering Temperature/Time — — 260/10 ° C/s
Relative Humidity (noncondensing) RH — 85 %
* Rating varies with temperature.
I
OP
P
MAX
RL
V
RM
V
FD
C
stg
—
—
—
—
150
10
2
20
mA
mW
V
V
—2mA
–40 85
–40 85
C
C
22
Lucent Technologies Inc.
°
∆λ
µ
Ω
µ
Advance Data Sheet D572-Type 1.5 µ m Uncooled DFB
FastLight
Laser Module
February 2000 for 2.5 Gbits/s and High-Bandwidth Applications
Handling Precautions
CAUTION: This device is susceptible to damage as a result of electrostatic discharge (ESD). Take proper
precautions during both handling and testing. Follow
EIA
* Standard
EIA
-625.
Although protection circuitry is designed into the device, take proper precautions to avoid exposure to ESD.
*
EIA
is a registered trademark of Electronic Industries Association.
Electro-Optical Characteristics
Table 2. Electro-Optical Characteristics (over operating temperature range unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
Operating Temperature
Range
Optical Output Power P
Threshold Current I
Modulation Current I
Slope Efficiency
Center Wav elength
2
3
Spectral Width (–20 dB)
Side-mode Suppression
Ratio
Tracking Error TE I
T — –25 — 70
F
TH
MOD
CW, P
CW, peak — 2 — mW
T = 25 ° C
T = full range
F
= 2.0 mW, T = 25 ° C
MON
CW, I
= constant,
5
2
15
7.5
11
—
25
—
T = full range
SE CW, P
λ
C
SMSR CW, P
= 2.0 mW, T = 25 ° C 57 — 133 µ W/mA
F
P
= 2.0 mW, CW 1530 1550 1570 nm
F
P
= 2.0 mW — — 1 nm
F
= 2.0 mW 30 40 — dB
F
MON
= constant, CW — — 1.5 dB
15
60
35
60
C
mA
mA
mA
1
mA
Spontaneous Emission P
Rise/Fall Times t
R
Dispersion Penalty D
, t
TH
I = (0.9) I
F
P
10%—90% pulse
1200 ps/nm—1600 ps/nm;
TH
4
, T = 25 ° C — 0.125 0.175 ns
— — 100
— — 2.0 dB
W
typical, 1350 ps/nm
Optical Return Loss ORL CW 18 — — dB
Forward Voltage V
F
At bias coil — 1.0 1.6 V
Input Impedance R — — 25 —
Monitor Current I
Monitor Dark Current I
Wav elength Tempera-
MON
D
— — — 0.09 0.12 nm/ ° C
5
V
= 5 V 100 — 1000
R
5
V
= 5 V — 10 200 nA
R
A
ture Coefficient
1.BOL value; EOL = 80 mA.
2.The slope efficiency is used to calculate the modulation current for a desired output power . This modulation current plus the threshold current
comprise the total operating current for the device.
3 1510 nm wavelength also available.
4.Corrected for electrical pulse fall time.
5.V
= reverse voltage.
R
Lucent Technologies Inc.
3
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