Data Sheet
December 2000
D372-Type Digital Uncooled DFB
Laser Module for 2.5 Gbits/s Applications
Applications
■
SONET OC-48/STM-16 systems
■
Telecommunications
■
Secure digital data systems
The low-profile D372-Type Laser Module is ideally suited for
OC-48 SONET and other high-speed digital applications.
Features
8-pin package suitable for SONET applications
■
Narrow linewidth, distributed feedback, multiquan-
■
tum-well (DFB-MQW)1.3 µ m laser with singlemode fiber pigtail
■
Choice of wide operating temperature ranges:
–40 ° C to +85 ° C or 0 ° C to +85 ° C
No TEC required
■
High output power: typical 2.0 mW peak power
■
coupled into single-mode fiber
■
Hermetically sealed active components
Internal back-facet monitor
■
Built-in thermistor and bias T
■
■
25 Ω input impedance
Internal isolator
■
Qualification program:
■
TA-983
Telcordia Technologies
*
Benefits
Easily board mounted
■
Gull wing leads
■
No additional heat sinks required
■
Low-cost alternative to industry-standard, 14-pin
■
isolated laser module (ILM)
Highly efficient DFB-MQW laser structure allows
■
for lower threshold and drive currents , and reduced
power consumption
Description
The D372-type uncooled laser module consists of a
laser diode coupled to a single-mode fiber pigtail.
The device is available in a standard, 8-pin configuration (see Figure 1 and/or Table 1) and is ideal for
long-reach (SONET) and other high-speed digital
applications.
The module includes a narrow linewidth (<1 nm),
DFB-MQW single-mode laser and an InGaAs PIN
photodiode back-facet monitor in a hermetically
sealed package.
This package is optimized for a 25 Ω input impedance and allows for dc biasing through an internal
bias T. A thermistor has been included for feedback
to board-level bias circuitry, if needed.
*
T elcordia Technologies
Technologies, Inc.
is a registered trademark of Telcordia
°
°
D372-Type Digital Uncooled DFB Data Sheet
Laser Module for 2.5 Gbits/s Applications December 2000
Description
(continued)
The device characteristics listed in this document are
met at 2.0 mW output power. Higher- or lower-power
operation is possible. Under conditions of a fixed
photodiode current, the change in optical output is typically ± 0.5 dB over an operating temperature range of
–40 ° C to +85 ° C.
This device incorporates the new laser 2000 manufacturing process from the Optoelectronic Products unit of
Agere Systems Inc.. Laser 2000 is a low-cost platform
that targets high-volume manufacturing and tighter
product distributions on all optical subassemblies. This
platform incorporates an advanced optical design that
is produced on one of the highly automated production
lines at the Opotelectronic manufacturing facility. The
laser 2000 platform is qualified for the central office and
uncontrolled environments, and can be used for applications requiring high performance and low cost.
43 12
Table 1. Pin Descriptions
Pin Number Connection
1 Thermistor
2 Thermistor, package GND
3 Laser dc bias cathode (–) choke
4 Photodiode cathode
5 Photodiode anode
6 Laser diode anode (+)
7 Laser RF input cathode (–) 25 Ω
8 Laser diode anode (+)
56 87
1-900.b
Figure 1. D372-Type Digital Uncooled DFB Mini 8-Pin Laser Module Schematic, Top View
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operations sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Parameter Symbol Min Max Unit
Maximum Peak Laser Drive Current or
Maximum Fiber Power*
Peak Reverse Laser Voltage:
Laser
Monitor
Monitor Forward Current I
Operating Case Temperature Range T
Storage Case Temperature Range T
Lead Soldering Temperature/Time — — 260/10 ° C/s
Relative Humidity (noncondensing) RH — 85 %
* Rating varies with temperature.
I
OP
MAX
P
RL
V
V
RD
FD
C
stg
—
—
—
—
150
10
2
20
mA
mW
V
V
—2mA
–40 85
–40 85
C
C
22
Agere Systems Inc.
°
∆λ
Ω
µ
Data Sheet D372-Type Digital Uncooled DFB
December 2000 Laser Module for 2.5 Gbits/s Applications
Handling Precautions
Caution: This device is susceptible to damage as a result of electrostatic discharge (ESD). Take proper
precautions during both handling and testing. Follow guidelines such as JEDEC Publication No.
108-A (Dec. 1988).
Although protection circuitry is designed into the device, take proper precautions to avoid exposure to ESD.
Electrical/Optical Characteristics
Table 2. D372-20 Electrical/Optical Characteristics (over operating temperature range unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
Operating Temperature
Range
Optical Output Power P
Threshold Current I
Modulation Current I
Slope Efficiency* SE CW, P
Center Wav elength
Spectral Width (–20 dB)
Side-mode Suppression
Ratio
Tracking Error TE I
Spontaneous Emission P
Rise/Fall Times t
Dispersion Penalty D
Optical Return Loss ORL CW 18 — — dB
Forward Voltage V
Input Impedance R — — 25 —
Monitor Current I
Monitor Dark Current I
Wav elength Tempera-
ture Coefficient
* The slope efficiency is used to calculate the modulation current for a desired output power. This modulation current plus the threshold current
comprise the total operating current for the device.
† Corrected for electrical pulse fall time.
‡ V
= reverse voltage.
R
T — –40 — 85
F
TH
MOD
CW, P
CW, I
C
λ
SMSR CW, P
TH
, t
R
MON
D
F
P
F
10%—90% pulse
CW, peak — 2 — mW
T = 25 ° C
T = full range
F
= 2.0 mW, T = 25 ° C
MON
= const.,T = full range
F
= 2.0 mW, T = 25 ° C 61 — 154 µ W/mA
F
P
= 2.0 mW, CW 1280 — 1335 nm
F
P
= 2.0 mW — — 1 nm
F
= 2.0 mW 30 40 — dB
= constant, CW — 0.5 1.25 dB
MON
I = (0.9) I
TH
†
, T = 25 ° C — 0.125 0.150 ns
5
2
13
7.5
11
—
20
—
15
50
33
55
——50
<60 km, 256 ps/nm — — 1.0 dB
At bias coil — 1.1 1.6 V
‡
V
= 5 V 100 — 1000
R
‡
V
= 5 V — 10 200 nA
R
— — — 0.09 0.1 nm/ ° C
C
mA
mA
mA
µ
W
A
Agere Systems Inc.
3