AGERE A1751A62RRSC10, A1751A62RRSC06, A1751A62RRFC10, A1751A62RRFC08, A1751A62RRFC06 Datasheet

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A1751A DWDM Analog Forward-Path or Return-Path Laser Modules
Data Sheet, Rev. 4
June 2001
Features
Higher temperature rating
Excellent linearity
Advanced analog chip design
Tested for forward and return path applications
Reduces equipment requirements in the hub
Exceeds
Telcordia Technologies
* 468 specifica-
tion.
Applications
Node capability
Narrow transmitter housing
Networks with limited fiber
Architectures using separate optical wavelengths to carry targeted services
*
Telcordia Technologies
is a trademark of Telcordia Technologies,
Inc.
Description
The A1751A laser module is a dense wavelength­division multiplexing (DWDM) laser for analog appli­cations. It features a distributed-feedback (DFB) chip that has been designed specifically for radio fre­quency (RF) applications. The A1751A laser module has a wide temperature range for reliable perfor­mance in harsh node environments and narrow transmitter designs. It also features low adiabatic chirp to maximize signal quality in short and long lengths of fiber. The laser’s excellent inherent linear­ity minimizes degradation of the broadcast signals caused by the quadrature amplitude modulation (QAM) channels.
Wavelength-division multiplexing is being designed into cable television architectures. DWDM, a method for delivering targeted QAM signals to different loca­tions, allows multiple signal sets to be combined onto a single strand of fiber for transmission from a head­end to a hub. At the hub, individual QAM signals can be selected and combined with broadcast analog channels. The versatile A1751A DWDM laser module reduces cable network architecture fiber needs and lessens equipment requirements in the hub.
The A1751A is available in a wide range of standard ITU wavelengths. The lasers are offered as either for­ward-path (40 MHz—860 MHz) or return-path (5 MHz—210 MHz) modules.
2
A1751A DWDM Analog Data Sheet, Rev. 4 Forward-Path or Return-Path Laser Modules June 2001
Agere Systems Inc.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso­lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
* The device can withstand continuous exposure to the specified limits without damage.
Characteristics
1. Tested in a 50 Ω resistively matched system.
2. Eight channel loading with 10% OMI and 40 km fiber length.
3. Measured at 42 MHz.
4. Measured at 553.25 MHz, 577.25 MHz, and 595.25 MHz.
5. Change in wavelength as case temperature is changed.
Parameter* Symbol Min Max Unit
Operating Case Temperature Range T
C
–40 85
°
C
Storage Temperature Range Tstg –40 85
°
C
Monitor Photodiode Reverse Voltage V
MPD
—10V
Laser Forward Current I
F
150 mA
Reverse Voltage (Laser) V
R
—2V
TEC Current I
TEC
—1.7A
RF Input Power P
RFIN
62 dBm V
Table 1. Key Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Frequency Range:
1
Return Path Forward Path
F —
5
40
— —
210 860
MHz MHz MHz
Frequency Response:
1
5 MHz—210 MHz 40 MHz—860 MHz
—I
F
= 60 mA,
T
OP
= 25 °C
±0.5 ±0.5
— —
dB dB
RF Return Loss:
1
5 MHz—210 MHz 40 MHz—860 MHz
RL
RF
IF = 60 mA,
— —
>16 >16
— —
dB dB
Optical Output Power P
O
IF = I
OP
6, 8, or
10
——mW
Laser Relative Intensity
Noise
RIN I
F
= I
TH
+ 70 mA,
T = 25 °C
<
–155 dB/Hz
Composite Second Order
2, 3
CSO IF = IOP, OMI = 10% –50 dBc
Composite Triple Beat
2, 4
CTB IF = IOP, OMI = 10% –60 dBc
Available Wavelengths
λ
I
P
= IOP, T = T
OP
1527.94 1563.1 nm
Wavelength Drift
5
λ∆
I
F
= 60 mA, T = T
OP,
T
C
varied from min—>max
0.04 nm
Adiabatic Chirp FM I
F
= 60 mA,
T
OP
= 25 °C,
measured at 500 MHz
40 100 MHz/mA
Operating Case
Temperature Range
T
C
IF = I
OP
–40 85
°
C
3
Data Sheet, Rev. 4 A1751A DWDM Analog June 2001 Forward-Path or Return-Path Laser Modules
Agere Systems Inc.
Characteristics
(continued)
1. Bias point at which all specifications apply.
2. For 10 mW output power. Minimum slope efficiency is lower f or lower-power lasers.
3. Chip temperature at which wavelength specification is met. Operating chip temperature is reported for each laser.
Electrical Schematics
Figure 1. A1751A Laser Schematic
Table 2. Additional Characteristics
Parameter Symbol Conditions Min Max Unit
Bias Current
1
I
B
BOL 120 mA
Threshold Current I
TH
25 °C, BOL 30 mA
Slope Efficiency
2
η I
P
= ITH + 20 and
I
TH
+ 60
0.10 mW/mA
Monitor Photocurrent I
MON
IOP = 0 mA, VRM = 5 V,
T
OP
= 25 °C
10 200 µA/mW
Operating Chip Temperature
3
T
OP
IF = I
OP
18 35 °C
TEC Current I
TEC
–40 °C < T
C
< 85 °C,
T
OP
= 15 °C—35 °C,
I
F
= 60 mA
–1.5 1.5 A
TEC Voltage V
TEC
T
OP
= 15 °C—35 °C over T
C
–2.5 3.8 V
Thermistor Resistance R
TH
TOP = 25 °C 10.5 k
Optical Return Loss RL T
C
40 dB
Side Mode Suppression Ratio SMSR I
F
= I
OP
30 dB
1
2
3
4
5
6
7
14
13
12
11
10
9
8
CASE
GROUND
NC
(+)
(–)
(+)
(–)
TEC
(–)
(+)
CASE
GROUND
NC
ISOLATOR
(+)
1-1233(F)
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