AGERE A1750A62RRSC10, A1750A62RRSC08, A1750A62RRSC06, A1750A62RRFC10, A1750A62RRFC08 Datasheet

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A1750A DWDM Analog Forward-Path or Return-Path Laser Module
Data Sheet, Rev. 4
June 2001
Features
Low adiabatic chirp
Excellent linearity
Advanced analog chip design
Tested for forward-path or return-path applications
Reduces equipment requirements in the hub
Exceeds
Telcordia Technologies
* 468 specifica-
tion.
Applications
Networks with limited fiber
Architectures using separate optical wavelengths to carry targeted services
*
Telcordia Technologies
is a trademark of Telcordia Technologies
Inc.
Description
The A1750A laser module is a dense wavelength­division multiplexing laser with a DFB chip designed specifically for analog RF applications. The device features low adiabatic chirp to maximize signal qual­ity in short and long lengths of fiber. The laser’s excellent inherent linearity minimizes degradation of the broadcast signals caused by the QAM channels.
Wavelength-division multiplexing (WDM) has gained widespread acceptance in the telecommunications market and is being designed into emerging cable television network architectures. Dense WDM, a method for delivering targeted QAM signals to differ­ent locations, allows multiple signal sets to be com­bined onto a single strand of fiber for transmission from a headend to a hub. At the hub, individual QAM signals can be selected and combined with broad­cast analog channels. The A1750A DWDM laser module reduces cable network architecture fiber requirements and lessen equipment requirements in the hub.
The A1750A is available at a variety of standard ITU wavelengths. The lasers are offered as either for­ward-path (40 MHz–860 MHz) or return-path mod­ules (5 MHz–210 MHz).
2
A1750A DWDM Analog Data Sheet, Rev. 4 Forward-Path or Return-Path Laser Module June 2001
Agere Systems Inc.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso­lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
* The device can withstand continuous exposure to the specified limits without damage.
Characteristics
1. Tested in a 50 Ω system with 27 Ω series matching resistor.
2. Eight-channel loading, 10% OMI, 40 km fiber.
3. Measured at 42 MHz.
4. Measured at 553.25 MHz, 577.25 MHz. and 595.25 MHz.
5. Consult an Agere Systems account manager for other wavelengths.
6. Change in wavelength as case temperature is changed.
Parameter* Symbol Min Max Unit
Operating Case Temperature Range T
C
–25 65
°
C
Storage Temperature Range Tstg –40 70
°
C
Monitor Photodiode Reverse Voltage V
MPD
—10V
Laser Forward Current I
F
150 mA
Reverse Voltage (Laser) V
R
—2V
TEC Current I
TEC
–1.5 1.5 A
RF Input Power P
RFIN
62 dBm V
Table 1. Key Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Frequency Range:
1
Return Path Forward Path
F —
5
40
— —
210 860
MHz MHz
Frequency Response:
1
5 MHz—210 MHz 40 MHz—860 MHz
|S21| I
F
= 60 mA,
T
OP
= 25 °C,
±0.5 ±0.5
— —
dB dB
RF Return Loss:
1
5 MHz—210 MHz 40 MHz—860 MHz
|S21| I
F
= 60 mA,
>16 >16
— —
dB dB
Optical Output Power P
O
IF = I
OP
6, 8, or
10
——mW
Laser Relative Intensity
Noise
RIN I
F
= I
TH
+ 70 mA,
T = 25 °C
<
–155 dB/Hz
Composite Second Order
2, 3
CSO IF = IOP, OMI = 10%
<
–50 dBc
Composite Triple Beat
2, 4
CTB IF = IOP, OMI = 10%
<
–60 dBc
Available Wavelengths
5
λ
I
P
= IOP, T = T
OP
1528 1563 nm
Wavelength Drift
6
∆λ
OP
I
F
= 60 mA, T = T
OP,
T
C
varied from min—>max
0.04 nm
Adiabatic Chirp FM I
F
= 60 mA,
T
OP
= 25 °C,
measured at 500 MHz
40 100 MHz/mA
Operating Case Tem pera-
ture Range
T
C
IF = I
OP
–20 65
°
C
3
Data Sheet, Rev. 4 A1750A DWDM Analog June 2001 Forward-Path or Return-Path Laser Module
Agere Systems Inc.
Characteristics
(continued)
1. Bias point at which all specifications apply.
2. For 10 mW output power. Minimum slope efficiency is lower f or lower power lasers.
3. Chip temperature at which wavelength specification is met. Operating chip temperature is reported for each laser.
Electrical Schematics
Figure 1. A1750A Laser Schematic
Table 2. Additional Characteristics
Parameter Symbol Conditions Min Max Unit
Bias Current
1
(Operating Current) I
B
BOL 120 mA
Threshold Current I
TH
25 °C, BOL 30 mA
Slope Efficiency
2
η I
P
= ITH + 20 and
I
TH
+ 60
0.10 mW/mA
Monitor Photocurrent I
MON
IOP = 0 mA, VRM = 5 V,
T
OP
= 25 °C
10 200 µA/mW
Operating Chip Temperature
3
T
OP
IF = I
OP
15 35 °C
TEC Current I
TEC
–20 °C < T
C
< 65 °C,
T
OP
= 15 °C—35 °C,
I
F
= 60 mA
–1.5 1.5 A
TEC Voltage V
TEC
T
OP
= 15 °C—35 °C over T
C
–2 2 V
Thermistor Resistance R
TH
TOP = 25 °C 9.5 10.5 k
Optical Return Loss ORL T
C
40 dB
Side Mode Suppression Ratio SMSR I
F
= I
OP
30 dB
1
2
3
4
5
6
7
14
13
12
11
10
9
8
CASE
GROUND
NC
(+)
(–)
(+)
(–)
TEC
(–)
(+)
CASE
GROUND
NC
ISOLATOR
(+)
1-1233F
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