AGERE 269-D-280-M-14xx-C, 269-D-280-M-14xx-B, 269-D-280-M-14xx-A, 269-D-280-D-14xx-C, 269-D-270-M-14xx-C Datasheet
...
269-Type 14xx nm DFB Pump Laser Module
Data Sheet
June 2001
The 269-type DFB pump laser module is designed as a
continuous-wave (CW) optical pump source for erbiu m-do ped
fiber amplifiers.
Features
■
Low relative intensity noise (RIN)
■
High-coupled rated output power up to 280 mW,
CW
■
Wide environmental range
■
Field-proven packaging technology
■
InGaAsP/InP high-power, strained multiple quantum-well (MQW), distributed-feedback (DFB) laser
chip design
■
Internal optical isolator (optional)
■
Internal thermoelectric cooler (TEC)
■
InGaAs PIN photodetector back-facet monitor
■
Single-mode and polarization-maintaining fiber pigtails
■
Compact, 14-pin butterfly package
■
Industry compatible package and pinout
Applications
■
Raman pump modules (RPM), copropagating and
counterpropagating
■
Erbium-doped fiber amplifiers (EDFA)
Description
The 269-type DFB pump laser module represen ts a
family of thermoelectrically cooled, high-power
lasers. These devices achieve stable wavelength
performance within the 1420 nm to 1510 nm range,
over the full operating temperature range. They are
designed as continuous-wave (CW) optical pump
sources for dense wavelength-division multiplexing
(DWDM) EDFA and Raman applications operating in
the C- and L-bands.
These new high-power DFB products represent a
breakthrough in 14xx nm pump laser technology by
integrating the beneficial characteristics of an external FBG laser design (such as stimulated Brillouin
scattering suppression) with the superior relativeintensity noise (RIN) performance of a DFB laser.
The combination of both characteristics is critical to
enable copropagating Raman pumping, which distributes gain over the first few kilometers of the transmission fiber. The typical RIN value Agere Systems’
DFB lasers is –158 dB/Hz, a major improvement over
comparable external FBG-stabilized lasers with a
typical RIN of –125 dB/Hz. Integrating wavelength
stabilization into the chip improves the stabilization
over operating temperature and thereby eliminates
the need for an external FBG .
The laser modules incorporate a high-power, quantum-well laser chip that achieves fiber powers up to
280 mW.
An integral thermoelectric cooler (TEC) stabilizes the
laser at room temperature and, combined with a hermetic environment, allows the device to achieve
high-power operation over the extended temperature
range of 0 °C to 75 °C. An internal InGaAs PIN photodiode, mounted behind the laser diode, functions
as the laser detector and monitors light emissions
from the rear facet of the laser.
The 269-type DFB module is offered in a 14-pin, hermetic butterfly package.
Data Sheet
269-Type 14xx nm DFB Pump Laser Module June 2001
2
Agere Systems Inc.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Handling Precautions
Electrostatic Discharge
CAUTION: This device is susceptible to damage as a result of electrostatic discharge (ESD). Take proper
precautions during both handling and testing. Follow guidelines such as
EIA
*
Standard
EIA
625.
Agere Systems Inc. employs a human-body model (HBM) for ESD-susceptibility testing and protection-design evaluation. ESD voltage thresholds are dependent on the critical parameters used to define the model. A standard
HBM (resistance = 1.5 kΩ, capacitance = 100 pF) is widely used and, therefore, can be used for comparison pur-
poses. The HBM ESD withstand voltage established for the 269-type laser pump module is ±500 V.
*
EIA
is a registered trademark of The Electronic Industries Association.
Parameter Symbol Min Max Unit
Operating Case Temperature Range T
C
075°C
Storage Case Temperature Range T
stg
–40 85 °C
Laser Forward Bias (TEC on):
P
O
= 120 mW—150 mW
P
O
= 160 mW—210 mW
P
O
= 220 mW—280 mW
I
F
—
—
—
1000
1500
1900
mA
mA
mA
Laser Reverse Voltage V
R
—2V
Photodiode Reverse Voltage V
RMON
—20V
TEC Current I
TEC
—2.2A
TEC Voltage V
TEC
—5.0V
Temperature Sensor Current I
TS
—5mA
Laser Diode Operating Chip Temperature T
LD
—40°C
Data Sheet
June 2001 269-Type 14xx nm DFB Pump Laser Module
3
Agere Systems Inc.
Electrical/Optical Characteristics
Table 1. Electrical/Optical Characteristics
(All performance parameters are specified for I
F, OP
, T
SET
= 25 °C,
T
CASE
~ 25 °C, unless otherwise specified.)
Parameter Symbol Conditions Min Typ Max Unit
Operating Optical Power P
O
— 120 — 280 mW
Wavelength:
Target Wavelength
Center Wavelength
λt
λ
C
—
0 °C—70 °C
1420
λt – 1.0
—
—
1510
λt + 1.0
nm
nm
RMS Spectral Width:
Single Mode
Multimode
∆λ P
O
—
—
1.0
0.2
5.0
0.3
MHz
nm
BOL Operating Laser Forward Current:
P
O
= 120 mW
P
O
= 130 mW
P
O
= 140 mW
P
O
= 150 mW
I
F, OP BOL
—
—
—
—
—
—
—
—
—
—
—
—
550
600
600
600
mA
mA
mA
mA
BOL Operating Laser Forward Current:
P
O
= 160 mW
P
O
= 170 mW
P
O
= 180 mW
P
O
= 190 mW
P
O
= 200 mW
I
F, OP BOL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
650
700
700
750
800
mA
mA
mA
mA
mA
BOL Operating Laser Forward Current:
P
O
= 210 mW
P
O
= 220 mW
P
O
= 230 mW
P
O
= 240 mW
P
O
= 250 mW
P
O
= 260 mW
P
O
= 270 mW
P
O
= 280 mW
I
F, OP BOL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
850
900
950
1000
1000
1100
1100
1100
mA
mA
mA
mA
mA
mA
mA
mA
EOL Operating Laser Forward Current I
F, OP EOL
———1.15 x
I
F, OP BOL
mA
EOL Laser Diode Forward Voltage V
R
I
F, OP
EOL — 2.3 3.0 V
Module Optical Isolation
(optional feature)
ISO EOL Over
T
CASE RANGE
30 — — dB
Polarization Extinction Ratio PER — 13 — — dB
Relative Intensity Noise RIN P
O
— –158 –150 dB/Hz
Table 2. Monitor Photodiode Characteristics
(All test parameters are specified for I
F, O P, TSET
= 25 °C,
T
CASE
~ 25 °C unless otherwise specified.)
Parameter Symbol Conditions Min Max Unit
Monitor Diode Current I
BF
— 200 2000 µA
Monitor Diode Dark Current
I
D
VR = –5 V, IF = 0 — 100 nA
Loading...