Aeroflex UTMC UT54ACTS86, UT54ACS86 Datasheet
57 RadHard MSI Logic
UT54ACS86/UT54ACTS86
Radiation-Hardened
Quadruple 2-Input Exclusive OR Gates
FEATURES
• radiation-hardened CMOS
- Latchup immune
• High speed
• Low power consumption
• Single 5 volt supply
• Available QML Q or V processes
• Flexible package
- 14-pin DIP
- 14-lead flatpack
DESCRIPTION
The UT54ACS86 and the UT54ACTS86 are quadruple 2-input
exclusive OR gates. The devices perform the Boolean function
Y = A B = AB + AB in positive logic.
An application is as a true/complement element. If one of the
inputs is low, the other input will be reproduced in true form at
the output. If one of the inputs is high, the signal on the other
input will be reproduced inverted at the output.
The devices are characterized over full military temperature
range of -55 C to +125 C.
FUNCTION TABLE
LOGIC SYMBOL
PINOUTS
14-Pin DIP
Top View
14-Lead Flatpack
Top View
LOGIC DIAGRAM
INPUTS OUTPUT
A B Y
L L L
L H H
H L H
H H L
Y1
(3)
(6)
Y2
Y3
(8)
(11)
Y4
(1)
A1
(2)
B1
(4)
A2
(5)
B2
(9)
A3
(10)
B3
(12)
A4
(13)
B4
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC
Publication 617-12.
=1
A1
B1
Y1
A2
B2
Y2
V
SS
V
DD
B4
A4
Y4
B3
A3
Y3
1 14
2 13
3 12
4 11
5 10
6 9
7 8
V
DD
B4
A4
Y4
B3
A3
Y3
A1
B1
Y1
A2
B2
Y2
V
SS
1 14
2 13
3 12
4 11
5 10
6 9
7 8
B4
A4
Y4
B3
A3
Y3
B2
A2
Y2
B1
A1
Y1
Rad-ard MSI Logic 58
UT54ACS86/UT54ACTS86
RADIATION HARDNESS SPECIFICATIONS
1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER LIMIT UNITS
Total Dose 1.0E6 rads(Si)
SEU Threshold
2
80
MeV-cm2/mg
SEL Threshold 120
MeV-cm2/mg
Neutron Fluence 1.0E14
n/cm
2
SYMBOL PARAMETER LIMIT UNITS
V
DD
Supply voltage -0.3 to 7.0 V
V
I/O
Voltage any pin -.3 to VDD +.3 V
T
STG
Storage Temperature range -65 to +150 C
T
J
Maximum junction temperature +175 C
T
LS
Lead temperature (soldering 5 seconds) +300 C
JC
Thermal resistance junction to case 20 C/W
I
I
DC input current 10 mA
P
D
Maximum power dissipation 1 W
SYMBOL PARAMETER LIMIT UNITS
V
DD
Supply voltage 4.5 to 5.5 V
V
IN
Input voltage any pin 0 to V
DD
V
T
C
Temperature range -55 to + 125 C
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