Aeroflex UTMC UT54ACTS540, UT54ACS540 Datasheet

229 RadHard MSI Logic

UT54ACS540/UT54ACTS540

Radiation-Hardened
Octal Buffers & Line Drivers, Inverted Three-State Outputs

FEATURES

Three-state outputs drive bus lines or buffer memory address

registers

radiation-hardened CMOS

- Latchup immune
High speed
Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package

- 20-pin DIP

- 20-lead flatpack

DESCRIPTION

The UT54ACS540 and the UT54ACTS540 are inverting octal
buffers and line drivers which improve the performance and
density of three-state memory address drivers, clock drivers,
and bus-oriented receivers and transmitters.

The devices are characterized over full military temperature
range of -55 C to +125 C.

FUNCTION TABLE

LOGIC SYMBOL

PINOUTS

20-Pin DIP

Top View

20-Lead Flatpack

Top View

INPUTS OUTPUT

1G 2G An Yn

L L L H

L L H L
H X X Z
X H X Z

(1)

EN

(2)

A1

(3)

A2

(4)

(18)

Y1

(16)

(17)

Y2

Note:

1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.

A3

(5)

A4

(6)

A5

(7)

A6

Y3

(13)

Y6

(14)

Y5

(15)

Y4

(8)

A7

(9)

A8

(11)

Y8

(12)

Y7

(19)

&

1G

2G

1G
A1

A2
A3
A4
A5

A6

V

DD

2G
Y1
Y2
Y3

Y5

A7

Y6

Y4

A8 Y7

V

SS

Y8

1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11

1G
A1
A2
A3

A4
A5
A6

V

DD

2G
Y1
Y2
Y3

Y5

A7

Y6

Y4

A8

Y7

V

SS

Y8

1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11

RadHard MSI Logic 230

UT54ACS540/UT54ACTS540

LOGIC DIAGRAM

RADIATION HARDNESS SPECIFICATIONS

1

Notes:

1. Logic will not latchup during radiation exposure within the limits defined in the table
.2. Device storage elements are immune to SEU affects.

ABSOLUTE MAXIMUM RATINGS

Note:

1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.

PARAMETER LIMIT UNITS

Total Dose 1.0E6 rads(Si)

SEU Threshold

2

80

MeV-cm2/mg

SEL Threshold 120

MeV-cm2/mg

Neutron Fluence 1.0E14

n/cm

2

A1A2A3A4A5

A6

A8

(1)(2)(3)(4)(5)(6)(7)

(9)

1G

2G

(19)

A7

(8)

Y1Y2Y3Y4Y5Y6

Y8 Y7

(18)(17)(16)(15)(14)(13)

(11) (12)

SYMBOL PARAMETER LIMIT UNITS

V

DD

Supply voltage -0.3 to 7.0 V

V

I/O

Voltage any pin -.3 to VDD +.3 V

T

STG

Storage Temperature range -65 to +150 C

T

J

Maximum junction temperature +175 C

T

LS

Lead temperature (soldering 5 seconds) +300 C

JC

Thermal resistance junction to case 20 C/W

I

I

DC input current 10 mA

P

D

Maximum power dissipation 1 W