Aeroflex UTMC UT54ACTS240, UT54ACS240 Datasheet
153 RadHard MSI Logic
UT54ACS240/UT54ACTS240
Radiation-Hardened
Octal Buffers & Line Drivers, Inverted Three-State Outputs
FEATURES
Three-state outputs drive bus lines or buffer memory address
registers
radiation-hardened CMOS
- Latchup immune
High speed
Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package
- 20-pin DIP
- 20-lead flatpack
DESCRIPTION
The UT54ACS240 and the UT54ACTS240 are inverting octal
buffer and line drivers which improve the performance and denÂsity of three-state memory address drivers, clock drivers, and
bus-oriented receivers and transmitters.
The devices are characterized over full military temperature
range of -55 C to +125 C.
FUNCTION TABLE
LOGIC SYMBOL
PINOUTS
20-Pin DIP
Top View
20-Lead Flatpack
Top View
INPUTS OUTPUT
1G, 2G A Y
L L H
L H L
H X Z
(1)
1G EN
(2)
1A1
(4)
1A2
(6)
1A3
(8)
1A4
(18)
1Y1
(12)
1Y4
(14)
(16)
1Y2
(19)
2G EN
(11)
2A1
(13)
2A2
(15)
2A3
(17)
2A4
(9)
2Y1
(3)
2Y4
(5)
2Y3
(7)
2Y2
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
1Y3
1G
1A1
2Y4
1A2
2Y3
1A3
2Y2
V
DD
2G
1Y1
2A4
1Y2
1Y3
1A4
2A2
2A3
2Y1
1Y4
V
SS
2A1
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
1G
1A1
2Y4
1A2
2Y3
1A3
2Y2
V
DD
2G
1Y1
2A4
1Y2
1Y3
1A4 2A2
2A3
2Y1 1Y4
V
SS
2A1
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
RadHard MSI Logic 154
UT54ACS240/UT54ACTS240
LOGIC DIAGRAM
RADIATION HARDNESS SPECIFICATIONS
1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
PARAMETER LIMIT UNITS
Total Dose 1.0E6 rads(Si)
SEU Threshold
2
80
MeV-cm2/mg
SEL Threshold 120
MeV-cm2/mg
Neutron Fluence 1.0E14
n/cm
2
1A1
1A2
1A3
1A4
1G
(2)
(4)
(6)
(8)
(1)
(16)
(14)
(12)
(18)
1Y1
1Y2
1Y3
1Y4
2A1
2A2
2A3
2A4
2G
(11)
(13)
(15)
(17)
(19)
(7)
(5)
(3)
(9)
2Y1
2Y2
2Y3
2Y4
SYMBOL PARAMETER LIMIT UNITS
V
DD
Supply voltage -0.3 to 7.0 V
V
I/O
Voltage any pin -.3 to VDD +.3 V
T
STG
Storage Temperature range -65 to +150 C
T
J
Maximum junction temperature +175 C
T
LS
Lead temperature (soldering 5 seconds) +300 C
JC
Thermal resistance junction to case 20 C/W
I
I
DC input current 10 mA
P
D
Maximum power dissipation 1 W
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