AEGIS A5A:1100.XX Service Manual

AEGIS

SEMICONDUTORES LTDA.

VOLTAGE RATINGS

V

Part Number

A5A:1100.14 1400 1400 1500

A5A:1100.16 1600 1520 1700

A5A:1100.18 1800 1710 1900

A5A:1100.20 2000 1900 2100

A5A:1100.22 2200 2090 2300

rep. peak reverse voltage

A5A:1100.XX

, VR (V) Max.

RRM

TJ = 0 to 175 C TJ = -40 to 0 C TJ = 25 to 175 C

O

V

, VR (V) Max. non-rep.

RSM

peak reverse voltage

O

O

MAXIMUM ALLOWABLE RATINGS

PARAMETER

TJ Junction Temperature

T

Storage Temperature

stg

I

F(AV)

I

Nom. RMS current

F(RMS)

I

Max. Peak non-rep. surge

FSM

Max. Av. current 950 A

@ Max. T

C

current

I2t Max. I2t capability kA2s

1/2

I2t

Max. I2t

1/2

capability

F Mounting Force

VALUE UNITS

-40 to 175 C

-40 to 175 C

125 C

O

O

O

1800 A

14.3 50 Hz half cycle sine wave

15.0 60 Hz half cycle sine wave
kA

17.0 50 Hz half cycle sine wave

17.8 60 Hz half cycle sine wave

937

1025

1325

1450

14500

kA2s

1250 N(Lbf)

NOTES

-

-

O

180 half sine wave

-

Initial TJ = 175 C, rated V

O

applied after surge.

Initial TJ = 175 C, no voltage

O

applied after surge.

t = 10ms

Initial TJ = 175 C, rated V

O

applied after surge.

t = 8.3 ms

t = 10ms

Initial TJ = 175 C, no voltage

O

applied after surge.

t = 8.3 ms

Initial TJ = 175 C, no voltage applied after surge. I2t

1/2

for time tx = I2t

O

1/2

1/2

* t

. (0.1 < tx < 10ms).

x

-

RRM

RRM

AEGIS

0 100 200 300 400 500 600 700 800 900 1000 1100 1200

100

110

120

130

140

150

160

170

*Sinusoidal wavefor m

180º

120º

90º

60º

30º

Maximum Allowable Case Temperature

Maximum Allowable Case Temperature (ºC)

Average Forward Current (A)

0 200 400 600 800 1000 1200 1400 1600 1800 2000

80

90

100

110

120

130

140

150

160

170

DC

180º

120º

90º

60º

30º

*Rectangular wavefor m

Maximum Allowable Case Temperature

Maximum Allowable Case Temperature (ºC)

Average Forward Current (A)

SEMICONDUTORES LTDA.

A5A:1100.XX

CHARACTERISTICS

PARAMETER MIN. TYP. MAX. UNITS

VFM Peak forward voltage

V

Low-level threshold

F(TO)1

V

High-level threshold

F(TO)2

rF1 Low-level resistance

rF2 High-level resistance

IRM Peak reverse current

R

Thermal resistance,

thJC

junction-to-case

R

Thermal resistance,

thCS

case-to-sink
wt Weight --- 255(9)

Case Style TO-200AC

--- 1.60 1.79 V

--- --- 0.788

--- --- 0.806

--- --- 0.318

--- --- 0.290

--- 25 50 mA

--- --- 0.05 C/W

--- --- 0.054 C/W

--- --- 0.055 C/W

--- --- 0.015 C/W

---

TEST CONDITIONS

Initial TJ = 25 C, 50-60Hz half sine, I

TJ = 175 C

V

Av. power = V

Use low values for IFM < pI

mW

TJ = 175 C. Max. rated V

O

DC operation, double side

O

O

O

O

180 sine wave, double side

O

120 rectangular wave, duble side
Mtg. Surface smooth, flat and greased. Single side.
For double side, divide value by 2.

g(oz.)

O

O

* I

F(AV)

+rF * [I

F(AV)

RRM

F(RMS)

F(TO)

O

---

---

= 2984A.

peak

2

]

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics