Advanced Semiconductor Inc OSC-1.3SH Datasheet

DESCRIPTION:

ORDER CODE: ASI10638

NPN SILICON RF POWER TRANSISTOR

The ASI OSC-1.3SH is Designed for

FEATURES:

•

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

VCC

P

DISS

TJ

T

STG

17.6 W @ TC ≤ 50 OC

700 mA

30 V

-65 OC to +200 OC

-65 OC to +200 OC

OSC-1.3SH

PACKAGE STYLE .250 2L FLG

A

ØD

DIM

C

B

E

F

G

H

I

J

L

K

MINIMUM

inches / mm

A
B
C
D
E
F
G
H
I
J
K
L
M
N
P

.028 / 0.71

.740 / 18.80

.245 / 6.22
.128 / 3.25

.110 / 2.79

.560 / 14.22 .570 / 14.48
.790 / 20.07

.225 / 5.72
.165 / 4.19 .185 / 4.70
.003 / 0.08
.058 / 1.47

.149 / 3.78

.125 / 3.18

.117 / 2.97

.060 x 45°

CHAMFER

N

M

MAXIMUM

inches / mm

.032 / 0.81

.255 / 6.48
.132 / 3.35

.117 / 2.97

.810 / 20.57

.235 / 5.97

.007 / 0.18
.068 / 1.73
.135 / 3.43.119 / 3.02
.187 / 4.75

P

θθJC

CHARACTERISTICS T

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 1.0 mA 45 V

CBO

BV

IC = 5.0 mA RBE = 10 Ω 45 V

CER

BV

IE = 1.0 mA 3.5 V

EBO

I

VCB = 28 V 0.5 mA

CBO

hFE VCE = 5.0 V IC = 500 mA 30 300 ---

COB VCB = 28 V f = 1.0 MHz

PG

ηηC

8.5 OC/W

= 25 OC

C

VCC = 21 V ICQ = 200 mA f = 2.7 GHz
P

= 1.3 W

OUT

12 pF

4.5
30

dB

%

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.