NPN SILICON RF POWER TRANSISTOR
The ASI MLN2027SS is Designed
for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCB
VCE
P
DISS
TJ
T
STG
140 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
10 A
60 V
35 V
MLN2027SS
PACKAGE STYLE .205 4L STUD
DIM
A
B
C
D
E
F
G
H
I
J
MINIMUM
inches / mm
.976 / 24.800
.976 / 24.800
.028 / 0.700
.161 / 4.100
.098 / 2.500
.200 / 5.100 .208 / 5.300
.004 / 0.100 .006 / 0.150
.425 / 10.800
.200 / 5.100
D
B
G
H
J
.138 / 3.500
#8-32UNC
A
C
E
F
MAXIMUM
inches / mm
1.000 / 25.4000
1.000 / 25.4000
.031 / 0.800
.196 / 5.000
.110 / 2.800
.465 / 11.800
2.05 / 5.200
θθJC
CHARACTERISTICS T
25 OC/W
C
= 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 35 V
CEO
BV
IC = 50 mA RBE = 10 Ω 60 V
CER
BV
IE = 10 mA 4.0 V
EBO
I
VE = 28 V 5 mA
CES
hFE VCE = 5.0 V IC = 1.0 A 10 100 ---
Cob VCB = 28 V f = 1.0 MHz
PGE
VCE = 25 V ICQ = 100 mA f = 2.0 GHz
P
= 0.5 W
OUT
4.0 pF
6.0
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
dB
Specifications are subject to change without notice.