Advanced Semiconductor Inc MLN1030SS Datasheet

DESCRIPTION:

ORDER CODE: ASI10625

NPN SILICON RF POWER TRANSISTOR

The ASI MLN1030SS is Designed
for

FEATURES:

•

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC
VCB
VCE

P

DISS

TJ

T

STG

140 W @ TC = 25 OC

-65 OC to +200 OC

-65 OC to +150 OC

10 A
60 V
35 V

MLN1030SS

PACKAGE STYLE .205 4L STUD

D

DIM

B

G

H

MINIMUM

inches / mm

.976 / 24.800

A

.976 / 24.800

B

.028 / 0.700

C
D

.161 / 4.100

E

.098 / 2.500

F

.200 / 5.100 .208 / 5.300

G

.004 / 0.100 .006 / 0.150

H

.425 / 10.800

I

.200 / 5.100

J

J

.138 / 3.500

#8-32UNC

A

C

E

F

MAXIMUM

inches / mm

1.000 / 25.4000

1.000 / 25.4000
.031 / 0.800

.196 / 5.000
.110 / 2.800

.465 / 11.800

2.05 / 5.200

θθJC

CHARACTERISTICS T

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 50 mA 35 V

CEO

BV

IC = 50 mA RBE = 10 Ω 60 V

CER

BV

IE = 10 mA 4.0 V

EBO

I

VE = 28 V 5.0 mA

CES

20 OC/W

C

= 25 OC

hFE VCE = 5.0 V IC = 1.0 A 10 100 ---

Cob VCB = 28 V f = 1.0 MHz

PGE

VCE = 20 V ICQ = 150 mA f = 1.0 GHz
P

= 1.0 W

OUT

5.0 pF

10

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

dB

Specifications are subject to change without notice.