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MLN1030SL
NPN SILICON RF POWER TRANSISTOR
The ASI MLN1030SL is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
EBO
P
DISS
TJ
T
STG
θθJC
7.0 W @ TC = 25 OC
0.250 A
40 V
28 V
3.5 V
-65 OC to +200 OC
-65 OC to +150 OC
20 OC/W
PACKAGE STYLE .280 4L PILL
A
S
S
ØC
MAXIMUM
inches / mm
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
F
E
DIM
ØB
D
MINIMUM
inches / mm
A
B
C
D
E
F
.220 / 5.59 .230 / 5.84
.275 / 6.99
.004 / 0.10
.050 / 1.27
.118 / 3.00
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 1 mA 40 V
CBO
BV
IC = 1 mA 28 V
CEO
BV
IE = 1 mA 3.5 V
EBO
I
VCB = 24 V 0.5 mA
CBO
hFE VCE = 5.0 V IC = 100 mA 20 120 ---
COB VCB = 28 V f = 1.0 MHz
PG
VCE = 20 V ICQ = 150 mA f = 1.0 GHz
P
= 1.0 W
OUT
5.0 pF
9.0
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
dB