Advanced Semiconductor Inc MLN1027S Datasheet

Specifications are subject to change without notice.

DESCRIPTION:

ORDER CODE: ASI10619

MLN1027S

NPN SILICON RF POWER TRANSISTOR

The ASI MLN1027S is Designed for

FEATURES:

•

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

V

CBO

V

CEO

V

EBO

P

DISS

TJ

T

STG

θθJC

7.0 W @ TC = 25 OC

0.250 A
40 V
28 V

3.5 V

-65 OC to +200 OC

-65 OC to +150 OC
25 OC/W

PACKAGE STYLE .280 4L STUD

A

45°

B

C

D

DIM

E

F

G

MINIMUM

inches / mm

A
B
C
D
E
F
G
H
I
J
K

1.010 / 25.65 1.055 / 26.80
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97

.245 / 6.22 .255 / 6.48

.175 / 4.45

.572 / 14.53

.130 / 3.30

.640 / 16.26

J

I

H

K

#8-32 UNC

MAXIMUM

inches / mm

.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48

.217 / 5.51
.285 / 7.24.275 / 6.99

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 1.0 mA 40 V

CBO

BV

IC = 1.0 mA 28 V

CEO

BV

IE = 1.0 mA 3.5 V

EBO

I

VCB = 24 V 0.5 mA

CBO

hFE VCE = 5.0 V IC = 100 mA 20 120 ---

COB VCB = 28 V f = 1.0 MHz

PG

VCE = 20 V ICQ = 100 mA f = 1.0 GHz
P

= 0.5 W

OUT

3.5 pF

9.0

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

dB