Advanced Semiconductor Inc MLN1027F Datasheet

DESCRIPTION:

ORDER CODE: ASI10618

NPN SILICON RF POWER TRANSISTOR

The ASI MLN1027F is Designed for

FEATURES:

•

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

VCE

P

DISS

TJ

T

STG

θθJC

300 mA

20 V

--- W

-65 OC to +200 OC

-65 OC to +200 OC
25 OC/W

MLN1027F

PACKAGE STYLE .250 2L FLG

C

B

E

G

L

DIM

A
B
C
D
E
F
G
H
I
J
K
L
M
N
P

MINIMUM

inches / mm

.028 / 0.71

.740 / 18.80

.245 / 6.22
.128 / 3.25

.110 / 2.79

.560 / 14.22 .570 / 14.48
.790 / 20.07

.225 / 5.72
.165 / 4.19 .185 / 4.70
.003 / 0.08
.058 / 1.47

.149 / 3.78

ØD

H

F

I

J

K

.125 / 3.18

.117 / 2.97

A

.060 x 45°

CHAMFER

P

N

M

MAXIMUM

inches / mm

.032 / 0.81

.255 / 6.48
.132 / 3.35

.117 / 2.97

.810 / 20.57

.235 / 5.97

.007 / 0.18
.068 / 1.73
.135 / 3.43.119 / 3.02
.187 / 4.75

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 1 mA 50 V

CBO

BV

IC = 5 mA 20 V

CEO

BV

IE = 1 mA 3.5 V

EBO

I

VCE = 18 V 0.5 mA

CEO

hFE VCE = 5.0 V IC = 100 mA 15 120 ---

COB VCB = 28 V f = 1.0 MHz

PG

VCE = 20 V P

ICQ = 100mA

= 0.5 W f = 1.0 GHz

OUT

3.5 pF

12 dB

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.